Patent US5202284A successfully refreshed from Google Patents.
US5202284A
Expired / Lapsed
US
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Selective and non-selective deposition of Si1-x Gex on a Si subsrate that is partially masked with SiO2
Assignee: HP Inc
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Filing: 1989-12-01
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Granted: 1993-04-13
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Expires: 2009-12-01
Abstract
Abstract Several methods are disclosed for minimizing the number of defects or misfit locations in a SiGe layer selectively or non-selectively deposited on a partially oxide masked Si substrate.
Inventors
- 👤 Theodore I. Kamins
- 👤 David B. Noble
- 👤 Judy L. Hoyt
- 👤 James F. Gibbons
- 👤 Martin P. Scott
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:55
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/24; H10P14/27; H10P14/271; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S438/00; Y10S438/942
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
105 words
A method of depositing a silicon-germanium layer on a partially oxide-masked silicon substrate, the method comprising: growing a silicon dioxide layer on a silicon substrate; preparing a pattern of windows to be etched through the silicon dioxide layer wherein the total area of the windows to be etched is maximized with respect to the total area of the silicon dioxide layer that is not to be etched; etching windows through the silicon dioxide layer according to the pattern to expose the silicon substrate; and selectively depositing a silicon-germanium layer on the exposed substrate in the windows, whereby any defects in the silicon-germanium layer are minimized.
Claim 2
Independent Claim
105 words
A method of depositing a silicon-germanium layer on a partially oxide-masked silicon substrate, the method comprising: growing a silicon dioxide layer on a silicon substrate; preparing a pattern of windows to be etched through the silicon dioxide layer wherein the total area of the windows to be etched is maximized with respect to the total area of the silicon dioxide layer that is not to be etched; etching windows through the silicon dioxide layer according to the pattern to expose the silicon substrate; and selectively depositing a silicon-germanium layer on the exposed substrate in the windows, whereby any defects in the silicon-germanium layer are minimized.
Claim 3
Dependent Claim
28 words
A method as in claim 1 wherein preparing a pattern comprises masking the silicon dioxide for photolithographic etching and etching windows comprises etching by means of the mask.
Claim 4
Independent Claim
115 words
A method of depositing a thick silicon-germanium layer on a partially oxide-masked silicon substrate, the method comprising the steps of: growing a silicon dioxide layer on a silicon substrate; preparing a pattern of a window to be etched through the silicon dioxide layer wherein the area of the window to be etched is determined according to the desired thickness of the silicon-germanium layer to be deposited in the window; etching a window through the silicon dioxide layer according to the pattern to expose the silicon substrate; and selectively depositing a silicon-germanium layer having said thickness and germanium content on the exposed substrate in the window, whereby any misfit dislocations in the silicon-germanium layer are minimized.
Claim 5
Independent Claim
115 words
A method of depositing a thick silicon-germanium layer on a partially oxide-masked silicon substrate, the method comprising the steps of: growing a silicon dioxide layer on a silicon substrate; preparing a pattern of a window to be etched through the silicon dioxide layer wherein the area of the window to be etched is determined according to the desired thickness of the silicon-germanium layer to be deposited in the window; etching a window through the silicon dioxide layer according to the pattern to expose the silicon substrate; and selectively depositing a silicon-germanium layer having said thickness and germanium content on the exposed substrate in the window, whereby any misfit dislocations in the silicon-germanium layer are minimized.
Claim 6
Dependent Claim
29 words
A method as in claim 3 wherein preparing a pattern comprises masking the silicon dioxide for photolithographic etching, and etching a window comprises etching by means of the mask.
Claim 7
Independent Claim
120 words
A method of depositing a silicon-germanium layer on a partially oxide-masked silicon substrate, the method comprising: growing a thick first silicon dioxide layer on a silicon substrate; anisotropically dry etching a window having substantially vertical side-walls through the first silicon dioxide layer to expose a portion of the substrate; forming a thin second silicon dioxide layer over the first silicon dioxide layer and over the exposed silicon substrate in the window, thereby removing any silicon damaged during the anisotropic dry etch; removing the second silicon dioxide layer from the window by wet etching to expose the silicon substrate; and selectively depositing a silicon-germanium layer on the exposed substrate in the window, whereby any defects in the silicon-germanium layer are minimized.
Claim 8
Independent Claim
120 words
A method of depositing a silicon-germanium layer on a partially oxide-masked silicon substrate, the method comprising: growing a thick first silicon dioxide layer on a silicon substrate; anisotropically dry etching a window having substantially vertical side-walls through the first silicon dioxide layer to expose a portion of the substrate; forming a thin second silicon dioxide layer over the first silicon dioxide layer and over the exposed silicon substrate in the window, thereby removing any silicon damaged during the anisotropic dry etch; removing the second silicon dioxide layer from the window by wet etching to expose the silicon substrate; and selectively depositing a silicon-germanium layer on the exposed substrate in the window, whereby any defects in the silicon-germanium layer are minimized.
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