US5180684A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor growth process
Assignee: Fujitsu Semiconductor Ltd
•
Filing: 1990-03-06
•
Granted: 1993-01-19
•
Expires: 2010-03-06
Abstract
Abstract A semiconductor growth process wherein a plurality of layers, each consisting of a different king of semiconductor material, are grown, includes the steps of: heating a substrate to a first growth starting temperature at which a growth of a first semiconductor layer can be started, supplying a first material gas to the surface of the substrate to cause a growth of the first semiconductor layer, lowering the temperature of the substrate to below first growth starting temperature, and at the same time, stopping the supply of the first material gas, to stop the growth of the first semiconductor layer, heating the substrate to a second growth starting temperature at which a growth of a second semiconductor layer can be started, and supplying a second material gas to the surface of the substrate to cause a growth of the semiconductor layer.
Inventors
- 👤 Hiroshi Fujioka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:56
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; B; B82; B82Y; B82Y10/00; H10D; H10D10/00; H10D10/01; H10D10/051; H10D10/054; H10D62/00; H10D62/80; H10D62/82; H10D62/822; H10P14/24; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10D30/00; H10D30/01; H10D30/014; H10D30/40; H10D30/43; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/057; Y10S148/059; Y10S148/16
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
171 words
A semiconductor growth process wherein a plurality of layers each consisting of a different kind of semiconductor material are grown, comprising the steps of: heating a substrate to a first growth starting temperature at which a growth of a first semiconductor layer can be started; supplying a first material gas to a surface of said substrate to cause a growth of said first semiconductor layer after said substrate is heated to said first growth starting temperature; cooling said substrate to a temperature below said first growth starting temperature and below a following second growth starting temperature, and at the same time, stopping the supply of said first material gas, to stop the growth of said first semiconductor layer; reheating said substrate to said second growth starting temperature, at which a growth of a second semiconductor layer can be started; and supplying a second material gas to the surface of said substrate to cause a growth of said second semiconductor layer after said substrate is reheated to said second growth starting temperature.
Claim 2
Dependent Claim
171 words
A semiconductor growth process wherein a plurality of layers each consisting of a different kind of semiconductor material are grown, comprising the steps of: heating a substrate to a first growth starting temperature at which a growth of a first semiconductor layer can be started; supplying a first material gas to a surface of said substrate to cause a growth of said first semiconductor layer after said substrate is heated to said first growth starting temperature; cooling said substrate to a temperature below said first growth starting temperature and below a following second growth starting temperature, and at the same time, stopping the supply of said first material gas, to stop the growth of said first semiconductor layer; reheating said substrate to said second growth starting temperature, at which a growth of a second semiconductor layer can be started; and supplying a second material gas to the surface of said substrate to cause a growth of said second semiconductor layer after said substrate is reheated to said second growth starting temperature.
Claim 3
Dependent Claim
15 words
A process according to claim 1, wherein said substrate is heated by an infrared heater.
Claim 4
Dependent Claim
19 words
A process according to claim 2, wherein said infrared heater is one of a halogen lamp and arc lamp.
Claim 5
Dependent Claim
25 words
A process according to claim 1, wherein said first semiconductor layer and said second semiconductor layer are respectively composed of a different conductive type silicon.
Claim 6
Dependent Claim
40 words
A process according to claim 4, wherein a dopant gas therefor AsH 3 and B 2 H 6 are respectively used at the same time as the growth gas for said first and second semiconductor layer, SiH 4 is used.
Claim 7
Dependent Claim
20 words
A process according to claim 1, wherein said first semiconductor layer is SiGe and said second semiconductor layer is Si.
References Cited (Backward Citations)
US4378259A
Cited
US4400409A
Cited
US4411728A
Cited
EP0085395A2
Cited
US4640720A
Cited
US4659401A
Cited
US4963508A
Cited
US4902643A
Cited
US4948752A
Cited
US4962051A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-01-19 | 1996-07-20 | 1997-01-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-01-19 | 2000-07-20 | 2001-01-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-01-19 | 2004-07-20 | 2005-01-19 | $7700.00 | Window Closed / Lapsed |