Method of manufacturing stacked capacitor type semiconductor memory device

Claim 2

A manufacturing method of a semiconductor memory device including a memory cell having one access transistor and one capacitor, comprising the steps of: forming a gate insulating film on a major surface of a semiconductor substrate having an element isolating region, forming a gate electrode and an interconnection layer by forming and patterning a conductive layer on said gate insulating film and said element isolating region, forming a pair of impurity regions by ion implanting impurities into said semiconductor substrate, using said gate electrode as a mask, covering the top surface and the side surfaces of said gate electrode and said interconnection layer with a first insulating layer, forming a first electrode layer on the surface of one of said impurity regions, the surface of said first insulating layer covering the surface of said gate electrode and the surface of said first insulating layer covering the surface of said interconnection layer, forming a projecting portion on said first electrode layer, forming a dielectric layer on the surface of said first electrode layer, and forming a second electrode layer on the surface of said dielectric layer, wherein said step of forming a projecting portion on said first electrode layer further comprises the steps of: forming a second insulating layer covering a prescribed region on the surface of said first insulating layer, on the surface of said first insulating layer covering the surfaces of said gate electrode and said interconnection layer, forming a first electrode layer having a projecting portion on which the both end portions thereof extend on the surface of said second insulating layer by forming and patterning a conductive layer on the surface of one of said impurity regions, said first insulating layer and said second insulating layer, and forming a space beneath said projecting portion of said first electrode layer by removing said second insulating layer.

Claim 3

A manufacturing method of a semiconductor memory device including a memory cell having one access transistor and one capacitor, comprising the steps of: forming gate insulating film on a major surface of a semiconductor substrate having an element isolating region, forming a gate electrode and an interconnection layer by forming and patterning a conductive layer on said gate insulating film and said element isolating region, forming a pair of impurity regions by ion implanting impurities into said semiconductor substrate, using said gate electrode as a mask, covering the top surface and the side surfaces of said gate electrode and said interconnection layer with a first insulating layer, forming a first electrode layer o the surface of one of said impurity regions, the surface of said first insulating layer covering the surface of said gate electrode and the surface of said first insulating layer covering the surface of said interconnection layer, forming a projecting portion on said first electrode layer, forming a dielectric layer on the surface of said first electrode layer, and forming a second electrode layer on the surface of said dielectric layer, wherein said step of forming a first electrode layer further comprises the steps of: forming a first electrode layer by forming and patterning a conductive layer on the surface of one of said impurity regions and the surface of said first insulating layer, and forming a space beneath the both end portions of said first electrode layer by removing the surface of said first insualting layer not covered with said first electrode layer by isotropical etching in a prescribed amount.

Claim 4

A manufacturing method of a semiconductor memory device including a memory cell having one access transistor and one capacitor, comprising the steps of: forming gate insulating film on a major surface of a semiconductor substrate having an element isolating region, forming a gate electrode and an interconnection layer by forming and patterning a conductive layer on said gate insulating film and said element isolating region, forming a pair of impurity regions by ion implanting impurities into said semiconductor substrate, using said gate electrode as a mask, covering the top surface and the side surfaces of said gate electrode and said interconnection layer with a first insulating layer, forming a first electrode layer o the surface of one of said impurity regions, the surface of said first insulating layer covering the surface of said gate electrode and the surface of said first insulating layer covering the surface of said interconnection layer, forming a projecting portion on said first electrode layer, forming a dielectric layer on the surface of said first electrode layer, and forming a second electrode layer on the surface of said dielectric layer, wherein said step of forming a first electrode layer further comprises the steps of: forming a first electrode layer by forming and patterning a conductive layer on the surface of one of said impurity regions and the surface of said first insulating layer, and forming a space beneath the both end portions of said first electrode layer by removing the surface of said first insualting layer not covered with said first electrode layer by isotropical etching in a prescribed amount.

Claim 5

A manufacturing method of a semiconductor memory device including a memory cell having one access transistor and one capacitor, comprising the steps of: forming a gate insulating film on a major surface of a semiconductor substrate having an element isolating region, forming a gate electrode and an interconnection layer by forming and patterning a conductive layer on said gate insulating film and said element isolating region, forming a pair of impurity regions by ion implanting impurities into said semiconductor substrate, using said gate electrode as a mask, covering the top surface and the side surfaces of said gate electrode and said interconnection layer with a first insulating layer, forming a first electrode layer on the surface of one of said impurity regions, the surface of said first insulating layer covering the surface of said gate electrode and the surface of said first insulating layer covering the surface of said interconnection layer, forming a projecting portion on said first electrode layer, forming a dielectric layer on the surface of said first electrode layer, and forming a second electrode layer on the surface of said dielectric layer, wherein said step of forming a projection portion on said first electrode layer further comprises the steps of: forming a first electrode layer by forming and patterning a conductive layer on the surface of one of said impurity regions and the surface of said first insualting layer, and forming a second portion on the surface of said first electrode layer by selectively etching away in a prescribed amount, a prescribed region of the surface of said first electrode layer.

Claim 6

A manufacturing method of a semiconductor memory device including a memory cell having one access transistor and one capacitor, comprising the steps of: forming a gate insulating film on a major surface of a semiconductor substrate having an element isolating region, forming a gate electrode and an interconnection layer by forming and patterning a conductive layer on said gate insulating film and said element isolating region, forming a pair of impurity regions by ion implanting impurities into said semiconductor substrate, using said gate electrode as a mask, covering the top surface and the side surfaces of said gate electrode and said interconnection layer with a first insulating layer, forming a first electrode layer on the surface of one of said impurity regions, the surface of said first insulating layer covering the surface of said gate electrode and the surface of said first insulating layer covering the surface of said interconnection layer, forming a projecting portion on said first electrode layer, forming a dielectric layer on the surface of said first electrode layer, and forming a second electrode layer on the surface of said dielectric layer, wherein said step of forming a projection portion on said first electrode layer further comprises the steps of: forming a first electrode layer by forming and patterning a conductive layer on the surface of one of said impurity regions and the surface of said first insualting layer, and forming a second portion on the surface of said first electrode layer by selectively etching away in a prescribed amount, a prescribed region of the surface of said first electrode layer.

Claim 7

A manufacturing method of a semiconductor memory device including a memory cell having one access transistor and one capacitor, comprising the steps of: forming a gate insulating film on a major surface of a semiconductor substrate having an element isolating region, forming a gate electrode and an interconnection layer by forming and patterning a conductive layer on said gate insulating film and said element isolating region, forming a pair of impurity regions by ion implanting impurities into said semiconductor substrate, using said gate electrode as a mask, covering the top surface and the side surfaces of said gate electrode and said interconnection layer with a first insulating layer, forming a first electrode layer on the surface of one of said impurity regions, the surface of said first insulating layer covering the surface of said gate electrode and the surface of said first insulating layer covering the surface of said interconnection layer, forming a projecting portion on said first electrode layer, forming a dielectric layer on the surface of said first electrode layer, and forming a second electrode layer on the surface of said dielectric layer, wherein said step of forming a projecting portion on said first electrode layer further comprises the steps of: forming a conductive layer on the surface of one of said impurity regions and the surface of said first insulating layer to be patterned in a prescribed shape, forming a second insulating layer to a relative thickness on the surfaces of said first insulating layer and said conductive layer, forming an opening portion down to the surface of said conductive layer in said second insulating layer, forming another conductive layer on the surface of said second insulating layer, the internal side surface of said opening portion, and the surface of said conductive layer exposed at a bottom portion of said opening portion, and leaving only said other conductive layer formed on the internal side surface of said opening portion by anisotropically etching said other conductive layer.

Claim 8

A manufacturing method of a semiconductor memory device including a memory cell having one access transistor and one capacitor, comprising the steps of: forming a gate insulating film on a major surface of a semiconductor substrate having an element isolating region, forming a gate electrode and an interconnection layer by forming and patterning a conductive layer on said gate insulating film and said element isolating region, forming a pair of impurity regions by ion implanting impurities into said semiconductor substrate, using said gate electrode as a mask, covering the top surface and the side surfaces of said gate electrode and said interconnection layer with a first insulating layer, forming a first electrode layer on the surface of one of said impurity regions, the surface of said first insulating layer covering the surface of said gate electrode and the surface of said first insulating layer covering the surface of said interconnection layer, forming a projecting portion on said first electrode layer, forming a dielectric layer on the surface of said first electrode layer, and forming a second electrode layer on the surface of said dielectric layer, wherein said step of forming a projecting portion on said first electrode layer further comprises the steps of: forming a conductive layer on the surface of one of said impurity regions and the surface of said first insulating layer to be patterned in a prescribed shape, forming a second insulating layer to a relative thickness on the surfaces of said first insulating layer and said conductive layer, forming an opening portion down to the surface of said conductive layer in said second insulating layer, forming another conductive layer on the surface of said second insulating layer, the internal side surface of said opening portion, and the surface of said conductive layer exposed at a bottom portion of said opening portion, and leaving only said other conductive layer formed on the internal side surface of said opening portion by anisotropically etching said other conductive layer.

Claim 9

A manufacturing method of a semiconductor memory device including a memory cell having one access transistor and one capacitor, comprising the steps of: forming a gate insulating film on a major surface of a semiconductor substrate having an element isolating region, forming a gate electrode and an interconnection layer by forming and patterning a conductive layer on said gate insulating film and said element isolating region, forming a pair of impurity regions by ion implanting impurities into said semiconductor substrate, using said gate electrode as a mask, covering the top surface and the side surfaces of said gate electrode and said interconnection layer with a first insulating layer, forming a first electrode layer on the surface of one of said impurity regions, the surface of said first insulating layer covering the surface of said gate electrode and the surface of said first insulating layer covering the surface of said interconnection layer, forming a projecting portion on said first electrode layer, forming a dielectric layer on the surface of said first electrode layer, and forming a second electrode layer on the surface of said dielectric layer, wherein said step of forming a projecting portion on said first electrode layer further comprises the steps of: forming a conductive layer on the surface of one of said impurity regions and the surface of said first insulating layer to be patterned in a prescribed shape, forming a second insulating layer to a relative thickness on the surfaces of said first insulating layer and said conductive layer, said second insulating layer having an upper planar surface, forming an opening down to the surface of said conductive layer in said second insulating layer, forming another conductive layer on the upper planar surface of said second insulating layer, the internal side surface of said opening portion, and the surface of said conductive layer exposed at the bottom of said opening, forming a resist pattern of a prescribed shape on the surface of said other conductive layer, and etching said other conductive layer using said resist pattern as a mask to form a wall portion along said opening and an upper end portion on said upper planar surface of said second insulating layer and circumscribing said opening.

Claim 10

A manufacturing method of a semiconductor memory device including a memory cell having one access transistor and one capacitor, comprising the steps of: forming a gate insulating film on a major surface of a semiconductor substrate having an element isolating region, forming a gate electrode and an interconnection layer by forming and patterning a conductive layer on said gate insulating film and said element isolating region, forming a pair of impurity regions by ion implanting impurities into said semiconductor substrate, using said gate electrode as a mask, covering the top surface and the side surfaces of said gate electrode and said interconnection layer with a first insulating layer, forming a first electrode layer on the surface of one of said impurity regions, the surface of said first insulating layer covering the surface of said gate electrode and the surface of said first insulating layer covering the surface of said interconnection layer, forming a projecting portion on said first electrode layer, forming a dielectric layer on the surface of said first electrode layer, and forming a second electrode layer on the surface of said dielectric layer, wherein said step of forming a projecting portion on said first electrode layer further comprises the steps of: forming a conductive layer on the surface of one of said impurity regions and the surface of said first insulating layer to be patterned in a prescribed shape, forming a second insulating layer to a relative thickness on the surfaces of said first insulating layer and said conductive layer, said second insulating layer having an upper planar surface, forming an opening down to the surface of said conductive layer in said second insulating layer, forming another conductive layer on the upper planar surface of said second insulating layer, the internal side surface of said opening portion, and the surface of said conductive layer exposed at the bottom of said opening, forming a resist pattern of a prescribed shape on the surface of said other conductive layer, and etching said other conductive layer using said resist pattern as a mask to form a wall portion along said opening and an upper end portion on said upper planar surface of said second insulating layer and circumscribing said opening.

Claim 11

A manufacturing method of a semiconductor memory device including a memory cell having one access transistor and one capacitor, said method comprising the steps of: forming a gate insulating film on a major surface of a semiconductor substrate having an element isolating region, forming a gate electrode and an interconnection layer by forming ad patterning a conductive layer on said gate insulating film and said element isolating region, forming a pair of impurity regions by ion implanting impurities into said semiconductor substrate, using said gate electrode as a mask, covering the top surface and the side surfaces of said gate electrode and said interconnection layer with an insulating layer, forming a step portion on the surface of said insulating layer, forming a first electrode layer on the surface of said insulating layer and on a surface of one of said impurity regions, forming a dielectric layer on the surface of said first electrode layer, and forming a second electrode layer on the surface of said dielectric layer, wherein said step of forming said step portion on the surface of said insulating layer comprises the step of: removing a portion of the surface region of said insulating layer covering the surfaces of aid gate electrode and said interconnection layer to a prescribed thickness, and said step of forming said first electrode layer on the surface of said insulating layer comprises the step of: forming said first electrode layer having a step portion following the shape of the step of said insulating layer on the surface of said gate electrode and said interconnection layer.

Claim 12

A manufacturing method of a semiconductor memory device including a memory cell having one access transistor and one capacitor, said method comprising the steps of: forming a gate insulating film on a major surface of a semiconductor substrate having an element isolating region, forming a gate electrode and an interconnection layer by forming ad patterning a conductive layer on said gate insulating film and said element isolating region, forming a pair of impurity regions by ion implanting impurities into said semiconductor substrate, using said gate electrode as a mask, covering the top surface and the side surfaces of said gate electrode and said interconnection layer with an insulating layer, forming a step portion on the surface of said insulating layer, forming a first electrode layer on the surface of said insulating layer and on a surface of one of said impurity regions, forming a dielectric layer on the surface of said first electrode layer, and forming a second electrode layer on the surface of said dielectric layer, wherein said step of forming said step portion on the surface of said insulating layer comprises the step of: removing a portion of the surface region of said insulating layer covering the surfaces of aid gate electrode and said interconnection layer to a prescribed thickness, and said step of forming said first electrode layer on the surface of said insulating layer comprises the step of: forming said first electrode layer having a step portion following the shape of the step of said insulating layer on the surface of said gate electrode and said interconnection layer.