Capacitively induced electrostatic discharge protection circuit

Claim 2

An improved integrated circuit chip, comprising: a semiconductor substrate of a first conductivity type having an upper major surface; an electrical contact pad formed on said upper major surface of said substrate; a shunt transistor operable only in a bipolar mode, formed on said upper major surface of said substrate, said shunt transistor having a first region, a second region and a third region formed in said substrate, wherein said first and third regions are highly doped regions of a second conductivity type and said second region is a lightly doped region of said first conductivity type having a length defined by the spacing between said first and third regions, and wherein said first region is electrically coupled to said electrical contact pad; and a zener diode formed on said upper major surface of said substrate, said zener diode having a first diode region and an adjacent second diode region formed in said substrate, wherein said first diode region is a highly doped region of said first conductivity type, and said second diode region is a highly doped region of said second conductivity type, and wherein said second diode region is electrically coupled to said pad and said first diode region is electrically coupled to said second diode region at a diode junction and to said substrate such that substantially all current flowing into said first diode region from said second diode region is injected into said substrate, and wherein said first diode region is spaced apart from but adjacent to said second region of said shunt transistor.

Claim 3

An integrated circuit as set out in claim 1, wherein said shunt transistor further comprises a thick oxide layer formed over said second region and a gate electrode formed on said oxide layer to thereby form a thick oxide field effect transistor structure and wherein said gate is coupled to said third region to maintain said thick oxide field effect transistor in a normally nonconducting mode.

Claim 4

An integrated circuit as set out in claim 1, wherein said first conductivity type semiconductor material is p type doped silicon.

Claim 5

An integrated circuit as set out in claim 1, wherein said first conductivity type semiconductor material is n type doped silicon.

Claim 6

An integrated circuit as set out in claim 1, further comprising a capacitor formed in said upper major surface of said substrate, said capacitor having a first conductive layer, a second conductive layer, and a dielectric layer formed between said first and second conductive layers, wherein said first conductive layer is electrically coupled to said electrical contact pad and said second conductive layer is electrically coupled to said second diode region of said zener diode.

Claim 7

An integrated circuit as set out in claim 2, further comprising a field effect transfer gate having a source region and drain region of said second conductivity type, a channel region of said first conductivity type, and a gate oxide and gate electrode formed over said channel region, wherein said source region corresponds to said first region of said shunt transistor, and wherein said transfer gate and shunt transistor further comprise a well region of said second conductivity type formed under said source region.

Claim 8

An improved integrated circuit chip, comprising: a silicon substrate having an epitaxial layer of a first conductivity type, said epitaxial layer having an upper major surface; an electrical contact pad formed on said upper major surface of said epitaxial layer; a shunt transistor formed in said epitaxial layer of said substrate, said shunt transistor having an emitter region, a base region and a collector region formed in said substrate, wherein said emitter and collector regions are highly doped regions of a second conductivity type and said base region is a lightly doped region of said first conductivity type having a length defined by the spacing between said emitter and collector regions, and wherein said collector region is electrically coupled to said electrical contact pad; a zener diode formed on said upper major surface of said substrate, said zener diode having a first diode region and an adjacent second diode region formed in said substrate, wherein said first diode region is a highly doped region of said first conductivity type, said second diode region is a highly doped region of said second conductivity type, and said first and adjacent second diode regions form a junction, and wherein said first diode region is spaced apart from but adjacent to said base region of said shunt transistor; and a capacitor formed in said epitaxial layer of said substrate, said capacitor having a first conductive layer, a second conductive layer, and a dielectric layer formed between said first and second conductive layers, wherein said first conductive layer is electrically coupled to said electrical contact pad and said second conductive layer is electrically coupled to said second diode region of said zener diode.

Claim 9

An improved integrated circuit chip, comprising: a silicon substrate having an epitaxial layer of a first conductivity type, said epitaxial layer having an upper major surface; an electrical contact pad formed on said upper major surface of said epitaxial layer; a shunt transistor formed in said epitaxial layer of said substrate, said shunt transistor having an emitter region, a base region and a collector region formed in said substrate, wherein said emitter and collector regions are highly doped regions of a second conductivity type and said base region is a lightly doped region of said first conductivity type having a length defined by the spacing between said emitter and collector regions, and wherein said collector region is electrically coupled to said electrical contact pad; a zener diode formed on said upper major surface of said substrate, said zener diode having a first diode region and an adjacent second diode region formed in said substrate, wherein said first diode region is a highly doped region of said first conductivity type, said second diode region is a highly doped region of said second conductivity type, and said first and adjacent second diode regions form a junction, and wherein said first diode region is spaced apart from but adjacent to said base region of said shunt transistor; and a capacitor formed in said epitaxial layer of said substrate, said capacitor having a first conductive layer, a second conductive layer, and a dielectric layer formed between said first and second conductive layers, wherein said first conductive layer is electrically coupled to said electrical contact pad and said second conductive layer is electrically coupled to said second diode region of said zener diode.

Claim 10

An integrated circuit as set out as in claim 7, wherein said shunt transistor further comprises a thick oxide layer formed over said base region and a gate electrode formed on said thick oxide layer and wherein said gate is electrically coupled to said emitter region to prevent said shunt transistor from operating in a field effect transistor mode.

Claim 11

An integrated circuit as set out in claim 7, wherein said first conductivity type is p type doped silicon.

Claim 12

An integrated circuit as set out in claim 7, wherein said first conductivity type is n type doped silicon.

Claim 13

An integrated circuit, comprising: a silicon substrate; an electrical contact pad formed in said substrate; transister means, formed in said substrate and eletrically coupled to said contact pad and to a ground potential for shunting current from said contact pad to ground when turned on in a conductive bipolar mode, said transistor means having a source region, a base region and a drain region, wherein said transistor means is operable only in said bipolar mode; a capacitor, formed in said substrate and electrically coupled to said contact pad; and means, formed in said substrate adjacent said transistor means and electrically coupled to said capacitor, for injecting current into said substrate and said base region to create a conductive path from the base region to the substrate which will turn on the bipolar mode of said transistor means when the voltage applied to the base region by said capacitor means exceeds a threshold value, thereby causing current to flow along the conductive path.

Claim 14

An integrated circuit, comprising: a silicon substrate; an electrical contact pad formed in said substrate; transister means, formed in said substrate and eletrically coupled to said contact pad and to a ground potential for shunting current from said contact pad to ground when turned on in a conductive bipolar mode, said transistor means having a source region, a base region and a drain region, wherein said transistor means is operable only in said bipolar mode; a capacitor, formed in said substrate and electrically coupled to said contact pad; and means, formed in said substrate adjacent said transistor means and electrically coupled to said capacitor, for injecting current into said substrate and said base region to create a conductive path from the base region to the substrate which will turn on the bipolar mode of said transistor means when the voltage applied to the base region by said capacitor means exceeds a threshold value, thereby causing current to flow along the conductive path.

Claim 15

An integrated circuit as set out in claim 11, wherein said means for injecting current comprises a zener diode.

Claim 16

An integrated circuit as set out in claim 12, wherein said zener diode comprises a first diode region electrically coupled to said capacitor, and a second diode region coupled to said first diode region and said substrate.

Claim 17

An integrated circuit as set out in claim 13, wherein said first diode region is n+ type doped silicon and said second diode region is p+ type doped silicon.

Claim 18

An integrated circuit as set out in claim 14, wherein said first diode region and said second diode region have doping concentrations chosen to set said threshold value.

Claim 19

An integrated circuit as set out in claim 15, wherein said threshold value is approximately 5 volts.