US4423431A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit device providing a protection circuit
Assignee: Fujitsu Ltd
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Filing: 1980-12-24
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Granted: 1983-12-27
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Expires: 2000-12-24
Abstract
Abstract A protective semiconductor integrated circuit device for protecting an internal circuit against an excessively high voltage has a first resistor of a low value resistance interposed between an input terminal and an input gate of the internal circuit. One of the drain and source regions of an MIS type transistor is connected to the input gate of the internal circuit to be protected and the other region of the source and drain is grounded. A capacitor is interposed between the gate of the MIS transistor and the input terminal. A second resistor or a diode of reverse polarity is interposed between the gate of the MIS transistor and ground. The protective device may be fabricated using, a bulk silicon, an insulating substrate such as sapphire, spinel or semi-insulating material, simultaneously with the internal circuit and without changing processes for fabrication of the internal circuit and without requiring any additional masking steps.
Inventors
- 👤 Nobuo Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 02:09
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D84/00; H10D84/80; H10D84/811
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
122 words
A semiconductor integrated circuit device for protecting an element having an input gate electrode, said device comprising a first resistor interposed between an input terminal and the input gate electrode of the element to be protected; an MIS type transistor having an input gate electrode drain and source regions, one of said drain and source regions being connected to said input gate electrode of said element and the other of said drain and source regions being connected to ground; a capacitor interposed between said input gate electrode of said MIS type transistor and said input terminal; and one of a second resistor and a diode being interposed between and connected to said input gate electrode of said MIS type transistor and ground.
Claim 2
Dependent Claim
122 words
A semiconductor integrated circuit device for protecting an element having an input gate electrode, said device comprising a first resistor interposed between an input terminal and the input gate electrode of the element to be protected; an MIS type transistor having an input gate electrode drain and source regions, one of said drain and source regions being connected to said input gate electrode of said element and the other of said drain and source regions being connected to ground; a capacitor interposed between said input gate electrode of said MIS type transistor and said input terminal; and one of a second resistor and a diode being interposed between and connected to said input gate electrode of said MIS type transistor and ground.
Claim 3
Dependent Claim
23 words
A semiconductor integrated circuit device as claimed in claim 1, wherein said MIS type transistor is an N-channel type silicon gate MOS transistor.
Claim 4
Dependent Claim
166 words
A semiconductor integrated circuit device, wherein an internal circuit and a protective circuit which protects the input gate of an insulated gate type transistor of said internal circuit against a high voltage are fabricated by elements of silicon-on-sapphire (SOS) structure, said semiconductor integrated circuit device comprising a transistor in said protective circuit consisting of an insulated gate type transistor fabricated in the same manner as said internal circuit; a resistor; a diode of reverse polarity; the input gate of said transistor in said protective circuit being grounded through one of said resistor and diode; a metal electrode provided on said input gate through an insulation layer; another resistor; and input means for applying an input signal to said metal electrode, one of the source and drain regions of said transistor in said protective circuit being grounded and said input signal being applied to the other of said source and drain regions and to said gate of said transistor of said internal circuit through said another resistor.
Claim 5
Dependent Claim
166 words
A semiconductor integrated circuit device, wherein an internal circuit and a protective circuit which protects the input gate of an insulated gate type transistor of said internal circuit against a high voltage are fabricated by elements of silicon-on-sapphire (SOS) structure, said semiconductor integrated circuit device comprising a transistor in said protective circuit consisting of an insulated gate type transistor fabricated in the same manner as said internal circuit; a resistor; a diode of reverse polarity; the input gate of said transistor in said protective circuit being grounded through one of said resistor and diode; a metal electrode provided on said input gate through an insulation layer; another resistor; and input means for applying an input signal to said metal electrode, one of the source and drain regions of said transistor in said protective circuit being grounded and said input signal being applied to the other of said source and drain regions and to said gate of said transistor of said internal circuit through said another resistor.
Claim 6
Dependent Claim
159 words
A semiconductor integrated circuit device for protecting an element having an input gate electrode, said device comprising a first resistor interposed between an input terminal and the input gate electrode of the element to be protected; an MIS type transistor having drain and source regions, one of said drain and source regions being connected to said input gate electrode of said element and the other of said drain and source regions being connected to ground, said MIS type transistor being a stacked gate type transistor having a silicon island, source and drain regions, a gate insulating layer of silicon dioxide, a silicon input gate electrode, a layer of phosphosilicate glass and an aluminum electrode; a capacitor interposed between said silicon input gate electrode of said MIS type transistor and said input terminal; and one of a second resistor and a diode being interposed between and connected to said silicon input gate electrode of said MIS type transistor and ground.
Claim 7
Dependent Claim
159 words
A semiconductor integrated circuit device for protecting an element having an input gate electrode, said device comprising a first resistor interposed between an input terminal and the input gate electrode of the element to be protected; an MIS type transistor having drain and source regions, one of said drain and source regions being connected to said input gate electrode of said element and the other of said drain and source regions being connected to ground, said MIS type transistor being a stacked gate type transistor having a silicon island, source and drain regions, a gate insulating layer of silicon dioxide, a silicon input gate electrode, a layer of phosphosilicate glass and an aluminum electrode; a capacitor interposed between said silicon input gate electrode of said MIS type transistor and said input terminal; and one of a second resistor and a diode being interposed between and connected to said silicon input gate electrode of said MIS type transistor and ground.
Claim 8
Dependent Claim
151 words
A semiconductor integrated circuit device for protecting an element having an input gate electrode, said device comprising a first resistor interposed between an input terminal and the input gate electrode of the element to be protected, said first resistor having a low resistance value in the order of one kilohm; an MIS type transistor having an input gate electrode and drain and source regions, one of said drain and source regions being connected to said input gate electrode of said element and the other of said drain and source regions being connected to ground; a capacitor interposed between said input gate electrode of said MIS type transistor and said input terminal; and one of a second resistor and a diode being interposed between and connected to said input gate electrode of said MIS type transistor and ground, said second resistor having a high resistance value in the order of one megohm.
Claim 9
Dependent Claim
151 words
A semiconductor integrated circuit device for protecting an element having an input gate electrode, said device comprising a first resistor interposed between an input terminal and the input gate electrode of the element to be protected, said first resistor having a low resistance value in the order of one kilohm; an MIS type transistor having an input gate electrode and drain and source regions, one of said drain and source regions being connected to said input gate electrode of said element and the other of said drain and source regions being connected to ground; a capacitor interposed between said input gate electrode of said MIS type transistor and said input terminal; and one of a second resistor and a diode being interposed between and connected to said input gate electrode of said MIS type transistor and ground, said second resistor having a high resistance value in the order of one megohm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-12-26 | 1987-06-27 | 1987-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-12-26 | 1991-06-27 | 1991-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-12-26 | 1995-06-27 | 1995-12-27 | $7700.00 | Window Closed / Lapsed |