Abstract Semiconductor slices, in particular having the surface polished on both sides, can be provided with a surface which effects the formation of gettering centers. These centers include stacking faults and/or dislocation networks in subsequent thermal treatment steps by a pressure loading being exerted on them with the aid of an elastic pressure transmission medium which causes local pressure inhomogeneities. A material erosion, for example in the form of scratches, is not necessary in this process. Advantageously, the treatment is carried out during a template polishing step in which a suitable pressure transmission medium is in contact with the rear side of the slice. The process makes available semiconductor slices with gettering action on one side which have a high surface quality on both sides.
Inventors
👤 Gerhard Brehm
👤 Helene Prigge
👤 Reinhold Wahlich
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-11-05 12:19
CPC Classifications
H; H10; H10P; H10P36/00; H10P36/03
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
94 words
A process for the surface treatment of a semiconductor slice having a front surface and a back surface comprising: providing an elastic pressure transmission medium, which causes local pressure inhomogeneities; subjecting at least one of said front surface or back surface of said slice to a pressure loading by erosion-free exposure to said elastic pressure transmission medium; generating a mechanical stress field in said at least one slice surface by said local pressure inhomogeneities; and subsequently thermally treating said semiconductor slice, causing the formation of stacking faults in said at least one slice surface.
Claim 2
Dependent Claim
94 words
A process for the surface treatment of a semiconductor slice having a front surface and a back surface comprising: providing an elastic pressure transmission medium, which causes local pressure inhomogeneities; subjecting at least one of said front surface or back surface of said slice to a pressure loading by erosion-free exposure to said elastic pressure transmission medium; generating a mechanical stress field in said at least one slice surface by said local pressure inhomogeneities; and subsequently thermally treating said semiconductor slice, causing the formation of stacking faults in said at least one slice surface.
Claim 3
Dependent Claim
23 words
The process as claimed in claim 1, comprising applying a pressure of 0.1 to 0.5 bar for said pressure loading of said slice.
Claim 4
Dependent Claim
18 words
The process as claimed in claim 1, comprising maintaining the pressure loading for 1 sec to 10 minutes.
Claim 5
Dependent Claim
29 words
The process as claimed in claim 1, comprising providing a pressure transmission medium based on elastic plastics and having small regions, distributed over the surface, with different elastic properties.
Claim 6
Dependent Claim
24 words
The process as claimed in claim 1, wherein said pressure transmission medium comprises an elastic plastic having grains of a nonelastic material embedded therein.
Claim 7
Dependent Claim
20 words
The process as claimed in claim 1, further comprising a template polishing step during which the pressure loading is exerted.