US4587771A
Expired / Lapsed
US
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Process for the backside-gettering surface treatment of semiconductor wafers
Assignee: Siltronic AG
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Filing: 1982-09-22
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Granted: 1986-05-13
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Expires: 2002-09-22
Abstract
Abstract Point defects or impurities, which are detrimental to the quality of elecnic components, can be eliminated by means of rearsurface damage, which induces dislocations and/or stacking faults, by means of mechanical stress to the semiconductor wafers used in the manufacture of those components. For this purpose, the semiconductor wafers are brought into contact, before polishing, oxidation and thermal treatment, with moving carrier bodies covered with an elastic carrier medium having abrasive grain bonded to it, which creates the desired mechanical stress by forming a large number of very fine scratches and fissures in the surface of the semiconductor wafers.
Inventors
- 👤 Alfred Buchner
- 👤 Franz Kuhn-Kuhnenfeld
- 👤 Walter Auer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 01:53
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/124; H10P36/00; H10P36/03; Y; Y10; Y10S; Y10S438/00; Y10S438/959
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
76 words
A process for the backside-gettering surface treatment of semiconductor wafers by means of mechanical stress, comprising the step of: linearly feeding the wafers on longitudinally-extending conveyor means in an unattached but supported condition, past at least one moving carrier body, the surface of which is provided with an elastic carrier medium to which an abrasive grain is bonded, so as to create mechanical stress and, in turn, rear-surface damage to said wafer having a rear-gettering effect.
Claim 2
Dependent Claim
76 words
A process for the backside-gettering surface treatment of semiconductor wafers by means of mechanical stress, comprising the step of: linearly feeding the wafers on longitudinally-extending conveyor means in an unattached but supported condition, past at least one moving carrier body, the surface of which is provided with an elastic carrier medium to which an abrasive grain is bonded, so as to create mechanical stress and, in turn, rear-surface damage to said wafer having a rear-gettering effect.
Claim 3
Dependent Claim
22 words
The process of claim 1, wherein materials having a Shore A hardness of up to 90 are used as said carrier medium.
Claim 4
Dependent Claim
27 words
The process according to claims 1 or 2, wherein said moving carrier body is a cylinder which is rotated as said wafers are brought into contact therewith.
Claim 5
Dependent Claim
21 words
The process of claim 1, wherein abrasive grain having a nominal grain size of from 3 to 250 μm is used.
Claim 6
Dependent Claim
15 words
The process of claim 1, wherein wafers of silicon are used as said semiconductor wafers.
Claim 7
Dependent Claim
20 words
The process of claim 3, wherein said bringing step comprises feeding the semiconductor wafers on a conveyor past said cylinder.
Claim 8
Dependent Claim
23 words
The process according to claim 1, wherein said conveyor means comprises a set of upper and lower conveyors which convey said wafers thereinbetween.
Claim 9
Dependent Claim
22 words
The process according to claim 1, wherein said conveyor means comprises a plurality of successively-arranged, spaced apart rollers aligned in a row.
Claim 10
Dependent Claim
78 words
A process for the backside-gettering surface treatment of semiconductor wafers by means of mechanical stress, comprising the step of: bringing the wafers, supported by, but unattached, to movable support means into contact with at least one rotating and oscillating carrier body, the surface of which is provided with an elastic carrier medium to which an abrasive grain is bonded so as to create mechanical stress and, in turn, rear-surface damage to said wafer having a rear gettering effect.
Claim 11
Dependent Claim
78 words
A process for the backside-gettering surface treatment of semiconductor wafers by means of mechanical stress, comprising the step of: bringing the wafers, supported by, but unattached, to movable support means into contact with at least one rotating and oscillating carrier body, the surface of which is provided with an elastic carrier medium to which an abrasive grain is bonded so as to create mechanical stress and, in turn, rear-surface damage to said wafer having a rear gettering effect.
Claim 12
Dependent Claim
83 words
A process for the backside-gettering surface treatment of semiconductor wafers by means of mechanical stress, comprising the step of: bringing the semiconductor wafers, supported by, but unattached, to movable support means, into contact with at least one moving carrier body, the surface of which is provided with an elastic carrier medium to which an abrasive grain is bonded so as to create mechanical stress, said carrier body moving at a speed effective for producing surface damage that induces dislocations in said semiconductor wafers.
Claim 13
Dependent Claim
83 words
A process for the backside-gettering surface treatment of semiconductor wafers by means of mechanical stress, comprising the step of: bringing the semiconductor wafers, supported by, but unattached, to movable support means, into contact with at least one moving carrier body, the surface of which is provided with an elastic carrier medium to which an abrasive grain is bonded so as to create mechanical stress, said carrier body moving at a speed effective for producing surface damage that induces dislocations in said semiconductor wafers.
Claim 14
Dependent Claim
84 words
A process for the backside-gettering surface treatment of semiconductor wafers by means of mechanical stress, comprising the step of: bringing the semiconductor wafers, supported by, but unattached, to movable support means, into contact with at least one moving carrier body, the surface of which is provided with an elastic carrier medium to which an abrasive grain is bonded so as to create mechanical stress, said carrier body moving at a speed effective for producing surface damage that induces stacking faults in said semiconductor wafers.
Claim 15
Dependent Claim
84 words
A process for the backside-gettering surface treatment of semiconductor wafers by means of mechanical stress, comprising the step of: bringing the semiconductor wafers, supported by, but unattached, to movable support means, into contact with at least one moving carrier body, the surface of which is provided with an elastic carrier medium to which an abrasive grain is bonded so as to create mechanical stress, said carrier body moving at a speed effective for producing surface damage that induces stacking faults in said semiconductor wafers.
Claim 16
Dependent Claim
90 words
A process for the backside-gettering surface treatment of semiconductor wafers by means of mechanical stress, comprising the step of: conveying the semiconductor wafers, supported by, but unattached, to move support means, into contact with at least one moving carrier body, the surface of which is provided with an elastic carrier medium to which an abrasive grain is bonded so as create mechanical stress, the wafers being conveyed into contact with said carrier body at a speed effective for producing surface damage that induces stacking faults in said semiconductor wafers therein.
Claim 17
Dependent Claim
90 words
A process for the backside-gettering surface treatment of semiconductor wafers by means of mechanical stress, comprising the step of: conveying the semiconductor wafers, supported by, but unattached, to move support means, into contact with at least one moving carrier body, the surface of which is provided with an elastic carrier medium to which an abrasive grain is bonded so as create mechanical stress, the wafers being conveyed into contact with said carrier body at a speed effective for producing surface damage that induces stacking faults in said semiconductor wafers therein.
Claim 18
Dependent Claim
89 words
A process for the backside-gettering surface treatment of semiconductor wafers by means of mechanical stress, comprising the step of: conveying the semiconductor wafers, supported by, but unattached, to movable support means, into contact with at least one moving carrier body, the surface of which is provided with an elastic carrier medium to which an abrasive grain is bonded so as to create mechanical stress, the wafer being conveyed into contact with said carrier body at a speed effective for producing surface damage that induces dislocations in said semiconductor wafers.
Claim 19
Dependent Claim
89 words
A process for the backside-gettering surface treatment of semiconductor wafers by means of mechanical stress, comprising the step of: conveying the semiconductor wafers, supported by, but unattached, to movable support means, into contact with at least one moving carrier body, the surface of which is provided with an elastic carrier medium to which an abrasive grain is bonded so as to create mechanical stress, the wafer being conveyed into contact with said carrier body at a speed effective for producing surface damage that induces dislocations in said semiconductor wafers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-12 | 1989-11-11 | 1990-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-12 | 1993-11-11 | 1994-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-12 | 1997-11-11 | 1998-05-13 | $7700.00 | Window Closed / Lapsed |