US4042419A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the removal of specific crystal structure defects from semiconductor discs and the product thereof
Assignee: Siltronic AG
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Filing: 1976-07-23
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Granted: 1977-08-16
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Expires: 1996-07-23
Abstract
Abstract Process of the removal of point defects and point defect agglomerates fromemiconductor discs, which comprises the steps of providing one side of the discs with a mechanical stress field and then subjecting the discs to a heat treatment.
Inventors
- 👤 Wolfgang Heinke
- 👤 Helmut Kirschner
- 👤 Detlef Reimann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:09
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B33/00; H; H10; H10P; H10P36/00; H10P36/03; Y; Y10; Y10S; Y10S148/00; Y10S148/061
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
40 words
A process for the removal of point defects and point defect agglomerates from semiconductor discs, comprising the steps of providing one side of the semiconductor discs with a mechanical stress field and then subjecting the discs to a heat treatment.
Claim 2
Dependent Claim
40 words
A process for the removal of point defects and point defect agglomerates from semiconductor discs, comprising the steps of providing one side of the semiconductor discs with a mechanical stress field and then subjecting the discs to a heat treatment.
Claim 3
Dependent Claim
40 words
The process according to claim 1 wherein the mechanical stress field is produced by super-saturating the crystal lattice in the surface of the semiconductor disc with foreign atoms which differ in size from the lattice atoms of the semiconductor disc.
Claim 4
Dependent Claim
20 words
The process according to claim 1 wherein the mechanical stress field is formed by bringing about a defined surface destruction.
Claim 5
Dependent Claim
36 words
The process according to claim 3 wherein the defined surface destruction is brought about by briefly grinding one side of the disc with an abrasive, the solids of which are harder than the semiconductor material treated.
Claim 6
Dependent Claim
19 words
The process according to claim 1 wherein the subsequent heat treatment is carried out in an atmosphere containing oxygen.
Claim 7
Dependent Claim
14 words
The process according to claim 1 wherein the semiconductor disc is made of silicon.
Claim 8
Dependent Claim
20 words
A semiconductor disc free of point defects and point defect agglomerates when made by the process defined in claim 1.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-08-15 | 1981-02-14 | 1981-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-08-15 | 1985-02-14 | 1985-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-08-15 | 1989-02-14 | 1989-08-16 | $7700.00 | Window Closed / Lapsed |