US3830668A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Formation of electrically insulating layers in semi-conducting materials
Assignee: United Kingdom Atomic Energy Authority
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Filing: 1971-07-19
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Granted: 1974-08-20
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Expires: 1991-07-19
Abstract
Abstract A method of forming an insulating layer within a semiconductor material by subjecting the material to ion bombardment so as to release impurity atoms from substitutional sites within the lattice, and heat treating the material to cause the impurity atoms to precipitate in the form of an electrically insulating layer in the regions where they were released from their substitutional sites.
Inventors
- 👤 G Dearnaley
- 👤 R Nelson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:09
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/208; H10P30/209; H10D; H10D99/00; H10P14/00; H10P14/60; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10P95/00; H10W; H10W10/00; H10W10/01; H10W10/10; H10W10/181; H10W74/00; H10W74/40; Y; Y10; Y10S; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
22 words
A method according to claim 1 wherein the ions are selected from the group consisting of protons, helium ions and carbon ions.
Claim 2
Dependent Claim
22 words
A method according to claim 1 including the operation of subjecting the semiconductor material to electron irradiation simultaneously with the ion bombardment.
Claim 3
Dependent Claim
26 words
A method according to claim 1 including the operation of subjecting the semiconductor material to electron irradiation subsequently to the ion bombardment and before heat treatment.
Claim 4
Independent Claim
104 words
A method of manufacturing a body of silicon having an insulating layer buried within the body comprising the operations of incorporating carbon atoms in a region of the body of silicon during crystal growth thereof whereby the carbon atoms occupy substitutional sites in the crystal lattice of the silicon, bombarding the body with protons so as to release a proportion of the carbon atoms from their substitutional sites in the crystal lattice, and heating the body to a temperature sufficient to cause carbon atoms to leave the sustitutional sites and precipitate to form a region of silicon carbide of low conductivity within the body.
Claim 5
Dependent Claim
97 words
A semiconducting material comprising a body of semiconductor material having impurity atoms occupying substitutional sites distributed throughout the crystal lattice and, buried within the crystal lattice of the body, a layer of insulating material consisting of a precipitate of the impurity material. 7 A semiconducting material comprising a body of semiconductor material having impurity atoms occupying substitutional sites in the crystal lattice and, buried within the crystal lattice of the body, a layer of insulating material consisting of a precipitate of the impurity material, said semiconducting material having been produced by the method claimed in claim 1.
References Cited (Backward Citations)
US3457632A
Cited
US3515956A
Cited
US3586542A
Cited
US3622382A
Cited
US3666548A
Cited
US3663308A
Cited
US3707765A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-08-19 | 1978-02-18 | 1978-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-08-19 | 1982-02-18 | 1982-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-08-19 | 1986-02-18 | 1986-08-20 | $7700.00 | Window Closed / Lapsed |