Patent US5164221A successfully refreshed from Google Patents.
US5164221A
Expired / Lapsed
US
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Forming die manufacturing method
Assignee: Alps Alpine Co Ltd
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Filing: 1991-01-04
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Granted: 1992-11-17
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Expires: 2011-01-04
Abstract
Abstract A manufacturing method of a forming die includes the steps of depositing a film of aluminum nitride or aluminum oxynitride on the forming surface of a forming member by passing an electric discharge through a mixture gas of halide of aluminum and a gas containing nitrogen atoms and hydrogen atoms or a mixture gas of halide of aluminum, a gas containing nitrogen atoms and a gas containing oxygen atoms by the application of a microwave and thereby ionizing the mixture gas, and fixing such a forming member on a die.
Inventors
- 👤 Yoshihiro Someno
- 👤 Toshio Hirai
- 👤 Makoto Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:43
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/511; C03; C03B; C03B11/00; C03B11/06; C03B11/08; C03B11/084; C03B11/086; C23C16/22; C23C16/30; C23C16/301; C23C16/303; C23C16/308; C03B2215/00; C03B2215/02; C03B2215/08; C03B2215/14; C03B2215/22; C03B2215/26; Y; Y02; Y02P; Y02P40/00; Y02P40/50; Y02P40/57
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
175 words
A method for producing an aluminum nitride film on a surface of a forming die comprising: positioning a microwave generating device to direct microwaves in a beam having a center of passage into a reaction chamber; positioning a gas inlet nozzle within said reaction chamber; positioning said forming die in said reaction chamber such that said surface is positioned outside of said beam and between said beam and said gas inlet nozzle such that said forming die is displaced from said center of passage by a first predetermined distance and is displaced a predetermined distance from said gas inlet nozzle; evacuating said reaction chamber; flowing a gas mixture containing a predetermined molar ratio of AlBr 3 to N 2 into said evacuated reaction chamber through said gas inlet nozzle; and emitting microwaves at a predetermined frequency from said microwave producing device into said reaction chamber such that a plasma region is formed within which the gas mixture reacts with said surface to form said aluminum nitride film at a temperature of 500° C. or lower.
Claim 2
Independent Claim
175 words
A method for producing an aluminum nitride film on a surface of a forming die comprising: positioning a microwave generating device to direct microwaves in a beam having a center of passage into a reaction chamber; positioning a gas inlet nozzle within said reaction chamber; positioning said forming die in said reaction chamber such that said surface is positioned outside of said beam and between said beam and said gas inlet nozzle such that said forming die is displaced from said center of passage by a first predetermined distance and is displaced a predetermined distance from said gas inlet nozzle; evacuating said reaction chamber; flowing a gas mixture containing a predetermined molar ratio of AlBr 3 to N 2 into said evacuated reaction chamber through said gas inlet nozzle; and emitting microwaves at a predetermined frequency from said microwave producing device into said reaction chamber such that a plasma region is formed within which the gas mixture reacts with said surface to form said aluminum nitride film at a temperature of 500° C. or lower.
Claim 3
Dependent Claim
13 words
A method of claim 1 wherein said first predetermined distance is 40 mm.
Claim 4
Dependent Claim
13 words
A method of claim 1 wherein said second predetermined distance is 40 mm.
Claim 5
Dependent Claim
19 words
A method of claim 1 wherein said predetermined molar ratio of AlBr 3 to N 2 is approximately 15.
Claim 6
Dependent Claim
13 words
A method of claim 1 wherein said predetermined frequency is approximately 2.45 GHz.
Claim 7
Independent Claim
171 words
A method for producing an aluminum oxynitride film on a surface of a forming die comprising: positioning a microwave generating device to direct microwaves in a beam having a center of passage into a reaction chamber; positioning a gas inlet nozzle within said reaction chamber; positioning said forming die in said reaction chamber such that said surface is positioned outside of said beam and between said beam and said gas inlet nozzle such that said forming die is displaced from said center of passage by a first predetermined distance and is displaced a predetermined distance from said gas inlet nozzle; evacuating said reaction chamber; flowing a gas mixture containing AlBr 3 and N 2 O into said evacuated reaction chamber through said gas inlet nozzle; and emitting microwaves at a predetermined frequency from said microwave producing device into said reaction chamber such that a plasma region is formed within which the gas mixture reacts with said surface to form said aluminum oxynitride film at a temperature of 500° C. or lower.
Claim 8
Independent Claim
171 words
A method for producing an aluminum oxynitride film on a surface of a forming die comprising: positioning a microwave generating device to direct microwaves in a beam having a center of passage into a reaction chamber; positioning a gas inlet nozzle within said reaction chamber; positioning said forming die in said reaction chamber such that said surface is positioned outside of said beam and between said beam and said gas inlet nozzle such that said forming die is displaced from said center of passage by a first predetermined distance and is displaced a predetermined distance from said gas inlet nozzle; evacuating said reaction chamber; flowing a gas mixture containing AlBr 3 and N 2 O into said evacuated reaction chamber through said gas inlet nozzle; and emitting microwaves at a predetermined frequency from said microwave producing device into said reaction chamber such that a plasma region is formed within which the gas mixture reacts with said surface to form said aluminum oxynitride film at a temperature of 500° C. or lower.
Claim 9
Dependent Claim
13 words
A method of claim 6 wherein said first predetermined distance is 40 mm.
Claim 10
Dependent Claim
13 words
A method of claim 6 wherein said second predetermined distance is 40 mm.
Claim 11
Dependent Claim
13 words
A method of claim 6 wherein said predetermined frequency is approximately 2.45 GHz.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-11-17 | 1996-05-18 | 1996-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-17 | 2000-05-18 | 2000-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-17 | 2004-05-18 | 2004-11-17 | $7700.00 | Window Closed / Lapsed |