Patent US5162263A successfully refreshed from Google Patents.
US5162263A
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Semiconductor device having salicide structure, method of manufacturing the same, and heating apparatus
Assignee: Toshiba Corp
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Filing: 1991-09-06
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Granted: 1992-11-10
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Expires: 2011-09-06
Abstract
Abstract A semiconductor device comprises a semiconductor substrate of a first conductivity type. An insulative film and metal films are sequentially formed on the main top surface of the semiconductor substrate. Impurity diffusion layers of a second conductivity type are selectively formed on the main top surface of the semiconductor substrate. The semiconductor device further comprises metal compound layers consisting of constituting elements of the semiconductor substrate and a metal element. The metal compound layers are formed in the impurity diffusion layers in such a manner that they do not contact the insulative film, and the metal compound layers on the main back surface side of the semiconductor substrate have faces formed in parallel to the top surface of the semiconductor substrate. The method also includes cooling the top of the substrate to form a temperature gradient that results in increased dopant concentration at the bottom of a silicide layer.
Inventors
- 👤 Iwao Kunishima
- 👤 Tomonori Aoyama
- 👤 Kyoichi Suguro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:48
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0212; H10D10/00; H10D10/01; H10D10/051; H10D30/0223; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/20; H10D64/60; H10D64/62; H10D64/66; H10D64/661; H10D64/662; H10D64/663; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/013; H10D84/0135; H10D84/0137; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S148/00; Y10S148/019; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
153 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a metal film on a main top surface of a semiconductor substrate of a first conductivity type having a main back surface; selectively forming compound material layers consisting of semiconductor material constituting said semiconductor substrate and a metal material constituting said metal film, at a contact portion between said metal film and said semiconductor substrate; injecting an impurity of a second conductivity type into said compound material layers; and providing a temperature gradient to set a temperature on a side of said main top surface of said semiconductor substrate lower than a temperature on said main back surface thereof, whereby said impurity is concentrated on faces of said compound material layers on said main back surface side of said semiconductor substrate and impurity diffusion layers of said second conductivity type are formed between said compound material layers and said semiconductor substrate.
Claim 2
Independent Claim
153 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a metal film on a main top surface of a semiconductor substrate of a first conductivity type having a main back surface; selectively forming compound material layers consisting of semiconductor material constituting said semiconductor substrate and a metal material constituting said metal film, at a contact portion between said metal film and said semiconductor substrate; injecting an impurity of a second conductivity type into said compound material layers; and providing a temperature gradient to set a temperature on a side of said main top surface of said semiconductor substrate lower than a temperature on said main back surface thereof, whereby said impurity is concentrated on faces of said compound material layers on said main back surface side of said semiconductor substrate and impurity diffusion layers of said second conductivity type are formed between said compound material layers and said semiconductor substrate.
Claim 3
Dependent Claim
14 words
The method according to claim 1, wherein said metal film is made of nickel.
Claim 4
Dependent Claim
36 words
The method according to claim 1, wherein said providing said temperature gradient step comprises: heating said main back surface of said semiconductor substrate and spraying cooling gas on said main top surface of said semiconductor substrate.
Claim 5
Independent Claim
149 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a metal film on a main top surface of a semiconductor substrate of a first conductivity type having a main back surface; selectively forming compound material layers consisting of semiconductor material constituting said semiconductor substrate and a metal material constituting said metal film, at a contact portion between said metal film and said semiconductor substrate; injecting an impurity of a second conductivity type into said compound material layers; and providing a temperature gradient to set a temperature on a side of said main top surface of said semiconductor substrate lower than a temperature on said main back surface thereof, whereby a density of said impurity at interfaces between said compound material layers and said semiconductor substrate increases, and impurity diffusion layers of said second conductivity type are formed between said compound material layers and said semiconductor substrate.
Claim 6
Independent Claim
149 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a metal film on a main top surface of a semiconductor substrate of a first conductivity type having a main back surface; selectively forming compound material layers consisting of semiconductor material constituting said semiconductor substrate and a metal material constituting said metal film, at a contact portion between said metal film and said semiconductor substrate; injecting an impurity of a second conductivity type into said compound material layers; and providing a temperature gradient to set a temperature on a side of said main top surface of said semiconductor substrate lower than a temperature on said main back surface thereof, whereby a density of said impurity at interfaces between said compound material layers and said semiconductor substrate increases, and impurity diffusion layers of said second conductivity type are formed between said compound material layers and said semiconductor substrate.
Claim 7
Dependent Claim
14 words
The method according to claim 4, wherein said metal film is made of nickel.
Claim 8
Dependent Claim
36 words
The method according to claim 4, wherein said providing said temperature gradient step comprises: heating said main back surface of said semiconductor substrate and spraying cooling gas on said main top surface of said semiconductor substrate.
Claim 9
Independent Claim
152 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a metal film on a main top surface of a semiconductor substrate of a first conductivity type having a main back surface; injecting an impurity of a second conductivity type into said metal film; selectively forming compound material layers consisting of semiconductor material constituting said semiconductor substrate and a metal material constituting said metal film, at a contact portion between said metal film and said semiconductor substrate; and providing a temperature gradient to set a temperature on a side of said main top surface of said semiconductor substrate lower than a temperature on said main back surface thereof, whereby said impurity is concentrated on faces of said compound material layers on said main back surface side of said semiconductor substrate and impurity diffusion layers of said second conductivity type are formed between said compound material layers and said semiconductor substrate.
Claim 10
Independent Claim
152 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a metal film on a main top surface of a semiconductor substrate of a first conductivity type having a main back surface; injecting an impurity of a second conductivity type into said metal film; selectively forming compound material layers consisting of semiconductor material constituting said semiconductor substrate and a metal material constituting said metal film, at a contact portion between said metal film and said semiconductor substrate; and providing a temperature gradient to set a temperature on a side of said main top surface of said semiconductor substrate lower than a temperature on said main back surface thereof, whereby said impurity is concentrated on faces of said compound material layers on said main back surface side of said semiconductor substrate and impurity diffusion layers of said second conductivity type are formed between said compound material layers and said semiconductor substrate.
Claim 11
Dependent Claim
14 words
The method according to claim 7, wherein said metal film is made of nickel.
Claim 12
Dependent Claim
36 words
The method according to claim 7, wherein said providing said temperature gradient step comprises: heating said main back surface of said semiconductor substrate and spraying cooling gas on said main top surface of said semiconductor substrate.
Claim 13
Independent Claim
148 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a metal film on a main top surface of a semiconductor substrate of a first conductivity type having a main back surface; injecting an impurity of a second conductivity type into said metal film; selectively forming compound material layers consisting of semiconductor material constituting said semiconductor substrate and a metal material constituting said metal film, at a contact portion between said metal film and said semiconductor substrate; and providing a temperature gradient to set a temperature on a side of said main top surface of said semiconductor substrate lower than a temperature on said main back surface thereof, whereby a density of said impurity at interfaces between said compound material layers and said semiconductor substrate increases, and impurity diffusion layers of said second conductivity type are formed between said compound material layers and said semiconductor substrate.
Claim 14
Independent Claim
148 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a metal film on a main top surface of a semiconductor substrate of a first conductivity type having a main back surface; injecting an impurity of a second conductivity type into said metal film; selectively forming compound material layers consisting of semiconductor material constituting said semiconductor substrate and a metal material constituting said metal film, at a contact portion between said metal film and said semiconductor substrate; and providing a temperature gradient to set a temperature on a side of said main top surface of said semiconductor substrate lower than a temperature on said main back surface thereof, whereby a density of said impurity at interfaces between said compound material layers and said semiconductor substrate increases, and impurity diffusion layers of said second conductivity type are formed between said compound material layers and said semiconductor substrate.
Claim 15
Dependent Claim
14 words
The method according to claim 10, wherein said metal film is made of nickel.
Claim 16
Dependent Claim
36 words
A method according to claim 10, wherein said providing said temperature gradient step comprises: heating said main back surface of said semiconductor substrate and spraying cooling gas on said main top surface of said semiconductor substrate.
References Cited (Backward Citations)
US4622735A
Cited
US4551908A
Cited
US4558507A
Cited
US4788160A
Cited
US4774204A
Cited
JPH01117319A
Cited
US4999320A
Cited
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