US4999320A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for suppressing ionization avalanches in a helium wafer cooling assembly
Assignee: Texas Instruments Inc
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Filing: 1989-05-23
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Granted: 1991-03-12
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Expires: 2009-05-23
Abstract
Abstract A method for suppressing ionization avalanches in a single wafer dry etch reactor is provided. An electron scavenging agent is mixed with helium gas in a container (32). The mixture of helium and the agent is introduced through an inlet (34) to a chamber (30) formed between a wafer (24), an O-ring (26) and a powered cathode (16). As free electrons are accelerated through a potential drop in the inlet and outlet (34 and 40), the electron scavenging agent combines with electrons to form anions. Partially due to the fact that anions are too massive to reach the energy level required to ionize helium, ionization avalanches of helium are suppressed and, thus, there is no arcing in the inlet and outlet (34 and 40).
Inventors
- 👤 Monte A. Douglas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 10:27
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; Y; Y10; Y10S; Y10S148/00; Y10S148/131; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
45 words
A method for preventing arc damage in a semiconductor wafer processing apparatus having a cooling device, comprising the steps of: mixing a thermally conductive gas with an electron scavenging agent; and introducing said mixed thermally conductive gas and electron scavenging agent into the cooling device.
Claim 2
Independent Claim
45 words
A method for preventing arc damage in a semiconductor wafer processing apparatus having a cooling device, comprising the steps of: mixing a thermally conductive gas with an electron scavenging agent; and introducing said mixed thermally conductive gas and electron scavenging agent into the cooling device.
Claim 3
Dependent Claim
38 words
The method of claim 1, wherein the scavenging agent consists of sulfur hexafluoride; and wherein the step of mixing comprises mixing between 0.01 to 10 percent by partial pressure of said scavenging agent with said thermally conductive gas.
Claim 4
Dependent Claim
16 words
The method of claim 1, wherein the step of mixing occurs before the step of introducing.
Claim 5
Dependent Claim
77 words
The method of claim 1, further comprising: disposing a wafer near an electrode having first and second conductive layers, said first and second conductive layers insulated from one another, said first conductive layer disposed between said second conductive layer and said wafer; and powering said first conductive layer of said electrode relative to said second conductive layer; wherein said introducing step introduces said mixed thermally conductive gas and electron scavenging agent to said wafer through said electrode.
Claim 6
Independent Claim
63 words
A method for suppressing ionization avalanches in a thermally conductive gas during semiconductor wafer plasma etching, comprising the steps of: mixing an electron scavenging agent with the thermally conductive gas; cooling the semiconductor wafer with said agent and the thermally conductive gas; and creating anions by combining the electron scavenging agent with electrons, said anions suppressing ionization avalanches of the thermally conductive gas.
Claim 7
Independent Claim
63 words
A method for suppressing ionization avalanches in a thermally conductive gas during semiconductor wafer plasma etching, comprising the steps of: mixing an electron scavenging agent with the thermally conductive gas; cooling the semiconductor wafer with said agent and the thermally conductive gas; and creating anions by combining the electron scavenging agent with electrons, said anions suppressing ionization avalanches of the thermally conductive gas.
Claim 8
Dependent Claim
33 words
The method of claim 5, wherein the step of mixing an electron scavenging agent with thermally conductive gas comprises mixing any of the species having a large cross-section for electron attachment with helium.
Claim 9
Dependent Claim
79 words
The method of claim 5, further comprising: disposing a wafer near an electrode having first and second conductive layers, said first and second conductive layers insulated from one another, said first conductive layer disposed between said second conductive layer and said wafer; and powering said first conductive layer of said electrode relative to said second conductive layer; wherein said cooling step comprises introducing said mixed thermally conductive gas and electron scavenging agent to said semiconductor wafer through said electrode.
Claim 10
Independent Claim
49 words
A method for suppressing helium ionization in a single wafer etch reactor, comprising the steps of: enhancing the cooling of a semiconductor wafer with helium gas; mixing an electron scavenging agent with said helium; and merging said agent with free electrons to create anions, said anions suppressing helium ionization.
Claim 11
Independent Claim
49 words
A method for suppressing helium ionization in a single wafer etch reactor, comprising the steps of: enhancing the cooling of a semiconductor wafer with helium gas; mixing an electron scavenging agent with said helium; and merging said agent with free electrons to create anions, said anions suppressing helium ionization.
Claim 12
Dependent Claim
16 words
The method of claim 8, wherein the step of mixing comprises mixing sulfur hexafluoride with helium.
Claim 13
Dependent Claim
16 words
The method of claim 8, wherein the step of mixing comprises mixing sulfur tetraflouride with helium.
Claim 14
Dependent Claim
16 words
The method of claim 8, wherein the step of mixing comprises mixing carbon tetrachloride with helium.
Claim 15
Dependent Claim
71 words
The method of claim 8, further comprising: disposing a wafer near an electrode having fist and second conductive layers, said first and second conductive layers insulated from one another, said first conductive layer disposed between said second conductive layer and said wafer; and powering said first conductive layer of said electrode relative to said second conductive layer; introducing said mixed helium and electron scavenging agent between said wafer and said electrode.
Claim 16
Independent Claim
73 words
A method for cooling a semiconductor wafer in a single wafer etch reactor to prevent arc damage from ionization of a thermally conductive gas, comprising the steps of: cooling the wafer with a helium chuck utilizing helium gas as the thermally conductive gas; adding an electron scavenging agent to said helium gas; and creating anions when said agent encounters free electrons, said anions preventing arc damage by suppressing ionization of said helium gas.
Claim 17
Independent Claim
73 words
A method for cooling a semiconductor wafer in a single wafer etch reactor to prevent arc damage from ionization of a thermally conductive gas, comprising the steps of: cooling the wafer with a helium chuck utilizing helium gas as the thermally conductive gas; adding an electron scavenging agent to said helium gas; and creating anions when said agent encounters free electrons, said anions preventing arc damage by suppressing ionization of said helium gas.
Claim 18
Dependent Claim
15 words
The method of claim 13, wherein the step of creating anions comprises creating associative anions.
Claim 19
Dependent Claim
15 words
The method of claim 13, wherein the step of creating anions comprises creating dissociative anions.
Claim 20
Dependent Claim
70 words
The method of claim 13, wherein said chuck has first and second conductive layers, said first and second conductive layers insulated from one another, said first conductive layer disposed between said second conductive layer and said wafer; and and further comprising: powering said chuck; wherein said cooling step comprises pumping said helium gas with said added electron scavenging agent between said wafer and said chuck through said second conductive layer.
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