Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
226 words
An apparatus for controlling outputs of read data in a semiconductor memory device, comprising: a plurality of output circuits for supplying read data which are read from a memory to an external circuit, said plurality of output circuits being provided in parallel to carry out parallel outputs of said read data; and control means for controlling said plurality of output circuits to carry out discharge of charge accumulated in said plurality of output circuits sequentially with a predetermined time difference by control signals generated in accordance with said predetermined time difference, said charges being accumulated by read data of a high level supplied to said plurality of output circuits prior to said discharge, said control means including a plurality of timing circuits for providing the control signals with said predetermined time difference, said timing circuits corresponding to said output circuits and erasing states stored in said output circuits prior to said discharge, said timing circuits are AND circuits which are connected in serial, such that an output of each AND circuit excluding a final stage-AND circuit is connected to an input of a following stage-AND circuit, each output of said AND circuits being connected to a corresponding one of said output circuits, and a signal requesting a supply of said read data to said external circuit being applied to two inputs of a first stage-AND circuit.
Claim 2
Independent Claim
226 words
An apparatus for controlling outputs of read data in a semiconductor memory device, comprising: a plurality of output circuits for supplying read data which are read from a memory to an external circuit, said plurality of output circuits being provided in parallel to carry out parallel outputs of said read data; and control means for controlling said plurality of output circuits to carry out discharge of charge accumulated in said plurality of output circuits sequentially with a predetermined time difference by control signals generated in accordance with said predetermined time difference, said charges being accumulated by read data of a high level supplied to said plurality of output circuits prior to said discharge, said control means including a plurality of timing circuits for providing the control signals with said predetermined time difference, said timing circuits corresponding to said output circuits and erasing states stored in said output circuits prior to said discharge, said timing circuits are AND circuits which are connected in serial, such that an output of each AND circuit excluding a final stage-AND circuit is connected to an input of a following stage-AND circuit, each output of said AND circuits being connected to a corresponding one of said output circuits, and a signal requesting a supply of said read data to said external circuit being applied to two inputs of a first stage-AND circuit.
Claim 3
Dependent Claim
58 words
An apparatus for controlling outputs of read data in a semiconductor memory device, according to claim 1, further comprising: request signal supply means for producing a request signal requesting a supply of said read data to said external circuit, said request signal being supplied to said control means to carry out a time-sequential supply of said read data.
Claim 4
Dependent Claim
39 words
An apparatus for controlling outputs of read data in a semiconductor memory device, according to claim 2, wherein: said request signal supply means produces said request signal by receiving a chip selecting signal and a memory address change signal.
Claim 5
Dependent Claim
50 words
An apparatus for controlling outputs of read data in a semiconductor memory device, according to claim 2, further comprising: means for detecting a change of a memory address to produce a memory address change signal which is supplied to said request signal supply means along with a chip selecting signal.