Method of fabricating solar cells

Claim 1

A process for producing hollow, crystalline semiconductor bodies having a photovoltaic junction, comprising the following steps: (a) providing a crystal growth apparatus comprising: a furnace enclosure; a crucible and die assembly supported inside of said enclosure, said crucible containing a semiconductor melt of a first conductivity type, and said die having an end face in the form of a closed plane geometric figure and capillary means for feeding said melt from said crucible to said end face; means for (a) holding a seed of predetermined cross-sectional configuration in contact with a film of said melt on said end face, and (b) moving said seed vertically away from said end face; a source of inert gas; a hollow tubular inner after heater dimensioned so as to be wholly contained within said tubular seed when said seed is in contact with a film of melt on said end face; a hollow tubular outer after heater surrounding and spaced from said inner after heater, said outer after heater being dimensions so as to surround said seed when said seed is in contact with said film of melt; and means for supplying heat to said crucible and die assembly and to said inner and outer after heaters; (b) providing a dopant source of a second, opposite conductivity type and means for holding said dopant source between and spaced from said outer after heater and said seed at a level above said die end face; and (c) within said furnace enclosure, growing a hollow, crystalline body, said body having an outer major surface; diffusing said dopant into said outer major surface of said growing crystalline body; and flowing an inert gas from said source past said dopant source in a direction away from said end face.

Claim 4

A method of producing hollow, silicon, crystalline bodies having a photovoltaic junction, comprising: (a) providing in a furnace an EFG growth apparatus comprising a crucible containing a supply of molten silicon, and a capillary die having an upper end surface with a polygonal edge configuration, with the capillary of said die communicating with said supply of molten silicon; (b) contacting said upper end surface with a silicon seed so as to form a film of molten silicon between said seed and said upper end surface; (c) growing from said film a hollow, crystalline body of silicon having an outer major surface, said body being characterized by a first type of conductivity; (d) replenishing said film from said supply of molten silicon in said crucible by capillary action in said capillary; and (e) forming by diffusion of a dopant a zone of opposite type conductivity and a photovoltaic junction adjacent said outer major surface of said crystalline body after said crystalline body has been grown from said film but is still inside said furnace enclosure.

Claim 5

A method of producing hollow, silicon, crystalline bodies having a photovoltaic junction, comprising: (a) providing in a furnace an EFG growth apparatus comprising a crucible containing a supply of molten silicon, and a capillary die having an upper end surface with a polygonal edge configuration, with the capillary of said die communicating with said supply of molten silicon; (b) contacting said upper end surface with a silicon seed so as to form a film of molten silicon between said seed and said upper end surface; (c) growing from said film a hollow, crystalline body of silicon having an outer major surface, said body being characterized by a first type of conductivity; (d) replenishing said film from said supply of molten silicon in said crucible by capillary action in said capillary; and (e) forming by diffusion of a dopant a zone of opposite type conductivity and a photovoltaic junction adjacent said outer major surface of said crystalline body after said crystalline body has been grown from said film but is still inside said furnace enclosure.