US4523966A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process of producing silicon ribbon with p-n junction
Assignee: Tohoku University
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Filing: 1984-09-13
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Granted: 1985-06-18
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Expires: 2004-09-13
Abstract
Abstract The disclosed process produces a silicon ribbon wafer with a p-n junction, by melting a raw silicon material, ejecting the molten silicon material onto a rotary cooling member so as to produce a silicon ribbon wafer through super-rapid cooling, and applying an impurity element whose polarity is opposite to that of the raw silicon material onto the thus formed silicon ribbon wafer at a temperature of not lower than 600 DEG C. and cooled from said temperature, whereby a p-n junction is formed in the silicon ribbon wafer simultaneously with the production of the fully solidified silicon ribbon wafer.
Inventors
- 👤 Noboru Tsuya
- 👤 Kenichi Arai
- 👤 Toshio Takeuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:03
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B11/00; C30B11/001; C30B29/60; C30B29/605; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9335; Y10S428/939; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
150 words
A process of producing a silicon ribbon with a p-n junction, comprising the steps of melting a raw silicon material having a polarity of the p- or n-type in a heat-resisting tube at a temperature higher than 0.5° C. and lower than 20° C. above the melting point of the raw silicon material, ejecting the melt of raw silicon material onto a rotary cooling substrate, cooling the melt super-rapidly so as to produce a silicon ribbon, and doping an impurity having a polarity of the p- or n-type and whose polarity is opposite to that of the raw silicon material onto the silicon ribbon thus ejected while the silicon ribbon is still at a temperature of 600° C. to 1,000° C. by applying dopant in a gaseous, liquid or paste state, whereby a p-n junction is formed in the silicon ribbon during the course of fully solidifying the silicon ribbon.
Claim 2
Dependent Claim
150 words
A process of producing a silicon ribbon with a p-n junction, comprising the steps of melting a raw silicon material having a polarity of the p- or n-type in a heat-resisting tube at a temperature higher than 0.5° C. and lower than 20° C. above the melting point of the raw silicon material, ejecting the melt of raw silicon material onto a rotary cooling substrate, cooling the melt super-rapidly so as to produce a silicon ribbon, and doping an impurity having a polarity of the p- or n-type and whose polarity is opposite to that of the raw silicon material onto the silicon ribbon thus ejected while the silicon ribbon is still at a temperature of 600° C. to 1,000° C. by applying dopant in a gaseous, liquid or paste state, whereby a p-n junction is formed in the silicon ribbon during the course of fully solidifying the silicon ribbon.
Claim 3
Dependent Claim
51 words
A process as set forth in claim 1, wherein said raw silicon material is of n-type and produced by addition of an n-type impurity selected from the group consisting of phosphorus, arsenic, antimony, bismuth, tantalum, sulphur, selenium, and tellurium, and said impurity applied to said silicon ribbon wafer is of p-type.
Claim 4
Dependent Claim
50 words
A process as set forth in claim 1, wherein said raw silicon material is of p-type and produced by addition of a p-type impurity selected from the group consisting of boron, gallium, indium, aluminum, thallium, zinc, and nickel, and said impurity applied to said silicon ribbon wafer is of n-type.
Claim 5
Dependent Claim
29 words
A process as set forth in claim 1, wherein said melt of raw silicon material is ejected through a nozzle defined at that lower end of said heat-resisting tube.
Claim 6
Dependent Claim
41 words
A process as set forth in claim 4, wherein said impurity is sprayed onto said silicon ribbon wafer through a nozzle spaced from said ejecting nozzle of the melt of raw silicon material by a distance of 3 to 15 mm.
Claim 7
Dependent Claim
27 words
A process as set forth in claim 1, wherein said melt of raw silicon material is ejected onto said rotary cooling substrate kept in a vacuum chamber.
Claim 8
Dependent Claim
27 words
A process as set forth in claim 1, wherein, said melt of raw silicon material is ejected onto said rotary cooling substrate kept in an argon atmosphere.
Claim 9
Dependent Claim
24 words
A process as set forth in claim 1, wherein said impurity is in gas-state and is applied to the silicon ribbon wafer by spraying.
Claim 10
Dependent Claim
27 words
A process as set forth in claim 1, wherein said melt of raw silicon material is ejected by applying a pressure of 0.01 to 1.5 atm thereto.
Claim 11
Dependent Claim
149 words
A process of producing a silicon ribbon with a p-n junction, comprising the steps of melting a raw silicon material in a heat-resisting tube at a temperature 0.5° C. to 20° C. above the melting point of the raw silicon material, ejecting the molten silicon material onto a rotary cooling substrate in a range of 0.01-1.5 atmospheric pressure so as to produce a silicon ribbon by super-rapid cooling, and doping an impurity whose polarity is opposite to that of the raw silicon material onto the silicon ribbon thus ejected while the silicon ribbon is maintained at a temperature of 600° C. to 1,000° C. at a delayed position from the contact point of the melt with the cooling substrate by a distance l of 3 to 15 mm, so as to form a p-n junction in the silicon ribbon simultaneously with the production of the fully solidified silicon ribbon.
Claim 12
Dependent Claim
149 words
A process of producing a silicon ribbon with a p-n junction, comprising the steps of melting a raw silicon material in a heat-resisting tube at a temperature 0.5° C. to 20° C. above the melting point of the raw silicon material, ejecting the molten silicon material onto a rotary cooling substrate in a range of 0.01-1.5 atmospheric pressure so as to produce a silicon ribbon by super-rapid cooling, and doping an impurity whose polarity is opposite to that of the raw silicon material onto the silicon ribbon thus ejected while the silicon ribbon is maintained at a temperature of 600° C. to 1,000° C. at a delayed position from the contact point of the melt with the cooling substrate by a distance l of 3 to 15 mm, so as to form a p-n junction in the silicon ribbon simultaneously with the production of the fully solidified silicon ribbon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-06-17 | 1988-12-17 | 1989-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-06-17 | 1992-12-17 | 1993-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-06-17 | 1996-12-17 | 1997-06-18 | $7700.00 | Window Closed / Lapsed |