US4152535A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Continuous process for fabricating solar cells and the product produced thereby
Assignee: Boeing Co
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Filing: 1976-07-06
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Granted: 1979-05-01
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Expires: 1996-07-06
Abstract
Abstract The process comprises the following steps: (1) forming a glass sheet which defines a substrate layer for the solar cell product; (2) forming a diffusion barrier layer on at least one surface of the substrate; (3) forming a first electrically-conductive layer on the diffusion barrier, the first electrically-conductive layer being a first electrode in the solar cell product; (4) depositing small-grain polycrystalline silicon in a thin film, i.e., 10-100 micrometers, on the first electrode layer; (5) recrystallizing, typically by heating, the deposited polycrystalline silicon until it reforms into large-grain polycrystalline or single-crystal silicon; (6) forming a PN junction in the recrystallized silicon layer; and (7) forming a second electrically-conductive layer on the recrystallized silicon layer, the second electrically-conductive layer being a second electrode in the solar cell product. The solar cell product produced by the above-process may be fabricated in large surface area configurations, suitable for terrestrial as well as extra-terrestrial use, at relatively low cost.
Inventors
- 👤 Czeslaw Deminet
- 👤 William E. Horne
- 👤 Richard E. Oettel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 03:53
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/131; C; C30; C30B; C30B1/00; C30B1/02; C30B29/00; C30B29/60; C30B29/605; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10F77/1642; H10F77/169; H10F77/1692; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/067; Y10S148/072; Y10S148/12
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
175 words
A process for making solar cells, comprising the steps: a. forming a substrate for the solar cell; b. forming a first electrode which is supported by said substrate; c. depositing a layer of small-grain semiconductor material, which is originally doped N or P, in such a manner that a first surface of said semiconductor layer is in electrical contact with said first electrode; d. recrystallizing said semiconductor material to increase its grain size to the point where said semiconductor layer may be used as the active element in a solar cell, while simultaneously removing substantially all electrically conducting impurities from said semiconductor material; e. doping the upper portion of said semiconductor layer opposite to said original doping, so as to form a PN junction in said semicondutor layer; and f. forming a second electrode in such a manner that it is in electrical contact with a second surface of the recrystallized semiconductor layer, the solar cell produced thereby being capable of providing a current output in response to light impinging on the recrystallized semiconductor layer.
Claim 2
Dependent Claim
175 words
A process for making solar cells, comprising the steps: a. forming a substrate for the solar cell; b. forming a first electrode which is supported by said substrate; c. depositing a layer of small-grain semiconductor material, which is originally doped N or P, in such a manner that a first surface of said semiconductor layer is in electrical contact with said first electrode; d. recrystallizing said semiconductor material to increase its grain size to the point where said semiconductor layer may be used as the active element in a solar cell, while simultaneously removing substantially all electrically conducting impurities from said semiconductor material; e. doping the upper portion of said semiconductor layer opposite to said original doping, so as to form a PN junction in said semicondutor layer; and f. forming a second electrode in such a manner that it is in electrical contact with a second surface of the recrystallized semiconductor layer, the solar cell produced thereby being capable of providing a current output in response to light impinging on the recrystallized semiconductor layer.
Claim 3
Dependent Claim
40 words
The process of claim 1, wherein the step of recrystallization includes the step of melting a substantial portion of said semiconductor layer without heating the substrate sufficiently to result in migration of impurities from said substrate into said semiconductor layer.
Claim 4
Dependent Claim
22 words
The process of claim 2, wherein said substrate has a melting point which is no greater than that of said semiconductor layer.
Claim 5
Dependent Claim
82 words
The process of claim 2, wherein the step of recrystallization includes the step of forming a molten region in said semiconductor layer by heating, and the further step of moving said semiconductor layer and the means for recrystallization relative to each other, so that said molten region moves gradually along the entire said semiconductor layer, wherein the impurities in said semiconductor layer move with said molten region, leaving the recrystallized semiconductor layer behind the molten region substantially free of electrically conducting impurities.
Claim 6
Dependent Claim
18 words
The process of claim 4, wherein the molten region is relatively narrow and extends across said semiconductor layer.
Claim 7
Dependent Claim
23 words
The process of claim 5, wherein the step of forming the molten region includes heating said semiconductor layer by a heavy particle beam.
Claim 8
Dependent Claim
20 words
The process of claim 1, including the step of forming a diffusion barrier intermediate said substrate and said first electrode.
Claim 9
Dependent Claim
19 words
The process of claim 1, including the step of forming a protective layer on top of said second electrode.
Claim 10
Dependent Claim
16 words
The process of claim 3, wherein said substrate is glass and said semiconductor material is silicon.
Claim 11
Dependent Claim
23 words
The process of claim 9, wherein the glass substrate is maintained at a temperature sufficient for it to be malable but not molten.
Claim 12
Dependent Claim
28 words
The process of claim 8, which includes the step of placing the substrate into a near vacuum, in which the remaining steps of the process are carried out.
Claim 13
Dependent Claim
25 words
The process of claim 1, wherein the grain size of said semiconductor material is increased to at least 100 micrometers by the step of recrystallization.
Claim 14
Dependent Claim
181 words
The product which is produced by the process comprising the steps of: a. forming a substrate for the remainder of the solar cell; b. forming a first electrode which is supported by said substrate; c. depositing a layer of small-grain semiconductor material, which is originally doped N or P, in such a manner that a first surface of said semiconductor layer is in electrical contact with said first electrode; d. recrystallizing said semiconductor material to increase its grain size to the point where said semiconductor layer may be used as the active element in a solar cell, while simultaneously removing substantially an electrically conducting impurities from said semiconductor material; e. doping the upper portion of said semiconductor layer opposite to said original doping, so as to form a PN junction in said semiconductor layer; and f. forming a second electrode in such a manner that it is in electrical contact with a second surface of the recrystallized semiconductor layer, the solar cell produced thereby being capable of providing a current output in response to light impinging on the recrystallized semiconductor layer.
Claim 15
Dependent Claim
181 words
The product which is produced by the process comprising the steps of: a. forming a substrate for the remainder of the solar cell; b. forming a first electrode which is supported by said substrate; c. depositing a layer of small-grain semiconductor material, which is originally doped N or P, in such a manner that a first surface of said semiconductor layer is in electrical contact with said first electrode; d. recrystallizing said semiconductor material to increase its grain size to the point where said semiconductor layer may be used as the active element in a solar cell, while simultaneously removing substantially an electrically conducting impurities from said semiconductor material; e. doping the upper portion of said semiconductor layer opposite to said original doping, so as to form a PN junction in said semiconductor layer; and f. forming a second electrode in such a manner that it is in electrical contact with a second surface of the recrystallized semiconductor layer, the solar cell produced thereby being capable of providing a current output in response to light impinging on the recrystallized semiconductor layer.
References Cited (Backward Citations)
US3571915A
Cited
US3585088A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-30 | 1982-10-30 | 1983-05-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-30 | 1986-10-30 | 1987-05-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-30 | 1990-10-30 | 1991-05-01 | $7700.00 | Window Closed / Lapsed |