US5153147A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Selective growth of inp in device fabrication
Assignee: Nokia Bell Labs
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Filing: 1991-02-27
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Granted: 1992-10-06
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Expires: 2011-02-27
Abstract
Abstract Selective epitaxy for indium phosphide in metalorganic chemical vapor deposition is possible by using a specific technique. In particular, a halogenated organic material is introduced with the InP precursors. This halogen-containing material should decompose to release halogen at approximately the same temperature that the metalorganic indium precursor decomposes. Through this process the manufacture of InP-based lasers is significantly enhanced and allows the use of reactive ion etching to form structures upon which InP regrowth is desired.
Inventors
- 👤 Robert F. Karlicek, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 04:13
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H01S5/2272; Y; Y10; Y10S; Y10S148/00; Y10S148/065
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
68 words
A process for fabricating a device comprising the steps of depositing a series of layers on a substrate wherein at least one of said layers comprises indium phosphide and wherein said indium phosphide layer is deposited by using a deposition gas comprising an indium-organic gas and a source of phosphorus characterized in that said deposition gas includes an organic composition other than said indium-organic gas that contains halogen.
Claim 2
Dependent Claim
68 words
A process for fabricating a device comprising the steps of depositing a series of layers on a substrate wherein at least one of said layers comprises indium phosphide and wherein said indium phosphide layer is deposited by using a deposition gas comprising an indium-organic gas and a source of phosphorus characterized in that said deposition gas includes an organic composition other than said indium-organic gas that contains halogen.
Claim 3
Dependent Claim
11 words
The process of claim 1 wherein said device comprises a laser.
Claim 4
Dependent Claim
18 words
The process of claim 1 wherein said deposition of indium phosphide occurs on selective portions of said substrate.
Claim 5
Dependent Claim
13 words
The process of claim 1 wherein said indium-organic gas comprises an indium trialkyl.
Claim 6
Dependent Claim
12 words
The process of claim 4 wherein said composition containing halogen comprises trichloroethane.
Claim 7
Dependent Claim
12 words
The process of claim 1 wherein said composition containing halogen comprises chloroethane.
Claim 8
Dependent Claim
26 words
The process of claim 1 wherein said composition containing halogen comprises a material containing an atom chosen from the group consisting of chlorine, bromine, and iodine.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-10-06 | 1996-04-06 | 1996-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-10-06 | 2000-04-06 | 2000-10-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-10-06 | 2004-04-06 | 2004-10-06 | $7700.00 | Window Closed / Lapsed |