Patent US5142541A successfully refreshed from Google Patents.
US5142541A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Error-bit generating circuit for use in a non-volatile semiconductor memory device
Assignee: Samsung Electronics Co Ltd
•
Filing: 1988-12-30
•
Granted: 1992-08-25
•
Expires: 2008-12-30
Abstract
Abstract An error-bit generating circuit for use in a nonvolatile semiconductor memory device, particularly in an EEPROM. The circuit is capable of easily checking the deterioration of operational performance in an error checking correction device thereof, by intentionally writing bit-error data into a memory cell thereof. The error-bit generating circuit includes a parity generator for generating specified bits of parity data according to input data received from an input buffer, means for writing into a memory cell array the input data and parity data, means for, after reading out the input data and parity data from the memory cell array, correcting an error-bit among the input data and then providing the corrected data, and an error-bit generator coupled between the input buffer and the memory cell array, for generating an error-bit signal onto a selected bit of the input data in response to a control signal and an address signal.
Inventors
- 👤 Jin-Ki Kim
- 👤 Hyung-Kyu Yim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 11:43
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/02; G06; G06F; G06F11/00; G06F11/07; G06F11/08; G06F11/10; G06F11/1008; G06F11/1076; G06F11/22; G06F11/2205; G06F11/2215; G11C29/04; G11C29/08; G11C29/12; G11C29/38; G06F11/1068
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
117 words
In a non-volatile semiconductor memory device having a parity generator for generating specified bits of parity data according to input data received from an input buffer, means for writing into a memory cell array said input data and said parity data, and means for, after reading out said input data and said parity data from the memory cell array, correcting an error-bit among said input data and then providing the corrected data, further comprising: error-bit generating means, coupled between said input buffer and the means for writing into said memory cell array, for generating an error-bit as a replacement for a selected bit of the input data in response to a control signal and an address signal.
Claim 2
Dependent Claim
117 words
In a non-volatile semiconductor memory device having a parity generator for generating specified bits of parity data according to input data received from an input buffer, means for writing into a memory cell array said input data and said parity data, and means for, after reading out said input data and said parity data from the memory cell array, correcting an error-bit among said input data and then providing the corrected data, further comprising: error-bit generating means, coupled between said input buffer and the means for writing into said memory cell array, for generating an error-bit as a replacement for a selected bit of the input data in response to a control signal and an address signal.
Claim 3
Dependent Claim
66 words
The non-volatile semiconductor memory device of claim 1, wherein said error-bit generating means comprises a plurality of NAND gates equal in number to the number of bits of said input data, for receiving a combination of said control signal and said address signal, and a plurality of EXCLUSIVE-NOR gates each having a first input terminal coupled to corresponding ones of output ports of said NAND gates.
Claim 4
Dependent Claim
63 words
The non-volatile semiconductor memory device of claim 2, further comprised of: means for reading out said input data and parity data from the memory cell array; said parity generator receiving said input data and said parity data from said reading means for providing, to said error-bit correcting means, parity information based upon said input data and said parity data from said reading means.
Claim 5
Dependent Claim
63 words
The non-volatile semiconductor memory device of claim 1, further comprised of: means for reading out said input data and parity data from the memory cell array; said parity generator receiving said input data and said parity data from said reading means for providing, to said error-bit correcting means, parity information based upon said input data and said parity data from said reading means.
Claim 6
Dependent Claim
113 words
A non-volatile semiconductor memory device, comprising: a parity generator for generating specified bits of parity data according to input data received; means for writing into a memory cell array said input data and parity data; means for, after reading out said input data and said parity data from the memory cell array, correcting an error-bit among the input data and then providing the corrected data; and error-bit generating means coupled between an input buffer and the means for writing into a memory cell array, for generating an error-bit signal and for replacing a selected bit of the input data with said error-bit signal in response to a control signal and an address signal.
Claim 7
Dependent Claim
113 words
A non-volatile semiconductor memory device, comprising: a parity generator for generating specified bits of parity data according to input data received; means for writing into a memory cell array said input data and parity data; means for, after reading out said input data and said parity data from the memory cell array, correcting an error-bit among the input data and then providing the corrected data; and error-bit generating means coupled between an input buffer and the means for writing into a memory cell array, for generating an error-bit signal and for replacing a selected bit of the input data with said error-bit signal in response to a control signal and an address signal.
Claim 8
Dependent Claim
66 words
The non-volatile semiconductor memory device of claim 5, wherein said error-bit generating means comprises: a plurality of NAND gates equal in number to the number of bits of said input data, for receiving a combination of said control signal and said address signal; and a plurality of EXCLUSIVE-NOR gates each having an input terminal coupled to receive output signals from corresponding ones of said NAND gates.
Claim 9
Dependent Claim
63 words
The non-volatile semiconductor memory device of claim 6, further comprised of: means for reading out said input data and parity data from the memory cell array; said parity generator receiving said input data and said parity data from said reading means for providing, to said error-bit correcting means, parity information based upon said input data and said parity data from said reading means.
Claim 10
Dependent Claim
63 words
The non-volatile semiconductor memory device of claim 5, further comprised of: means for reading out said input data and parity data from the memory cell array; said parity generator receiving said input data and said parity data from said reading means for providing, to said error-bit correcting means, parity information based upon said input data and said parity data from said reading means.
Claim 11
Dependent Claim
87 words
A non-volatile semiconductor memory device, comprising: means for, after reading out input data bits and parity data from a memory cell array, correcting an error-bit among said input data bits and then providing corrected data, and error-bit generating means coupled between an input buffer, said input buffer receiving input data for storage into said memory cell array, and the memory cell array, for generating an error-bit signal for replacement of a selected bit of the input data in response to a control signal and an address signal.
Claim 12
Dependent Claim
87 words
A non-volatile semiconductor memory device, comprising: means for, after reading out input data bits and parity data from a memory cell array, correcting an error-bit among said input data bits and then providing corrected data, and error-bit generating means coupled between an input buffer, said input buffer receiving input data for storage into said memory cell array, and the memory cell array, for generating an error-bit signal for replacement of a selected bit of the input data in response to a control signal and an address signal.
Claim 13
Dependent Claim
43 words
The non-volatile semiconductor memory device of claim 9, wherein said error-bit generating means comprises a plurality of NAND gates equal in number to the number of bits of said input data, for receiving a combination of said control signal and said address signal.
Claim 14
Dependent Claim
29 words
The non-volatile semiconductor memory device of claim 10, wherein said error-bit generating means further comprises a plurality of EXCLUSIVE-NOR gates for receiving input data bits of said input data.
Claim 15
Dependent Claim
90 words
The non-volatile semiconductor memory device of claim 11, further comprised of: means for reading out said input data bits and parity data from the memory cell array; a parity generator for providing said parity data to the memory cell array in dependence upon said input data, for receiving said input data bits and said parity data from said reading means, and for providing, to said error-bit generating means, parity information based upon said input data bits and said parity data read by said reading means from said memory cell array.
Claim 16
Dependent Claim
90 words
The non-volatile semiconductor memory device of claim 10, further comprised of: means for reading out said input data bits and parity data from the memory cell array; a parity generator for providing said parity data to the memory cell array in dependence upon said input data, for receiving said input data bits and said parity data from said reading means, and for providing, to said error-bit generating means, parity information based upon said input data bits and said parity data read by said reading means from said memory cell array.
Claim 17
Dependent Claim
90 words
The non-volatile semiconductor memory device of claim 9, further comprised of: means for reading out said input data bits and parity data from the memory cell array; a parity generator for providing said parity data to the memory cell array in dependence upon said input data, for receiving said input data bits and said parity data from said reading means, and for providing, to said error-bit generating means, parity information based upon said input data bits and said parity data read by said reading means from said memory cell array.
Claim 18
Dependent Claim
128 words
A semiconductor memory device, comprising: input means for receiving input data; parity generator means arranged to receive said input data, for generating bits of parity data according to said input data; error-bit generating means, for generating error data by introducing an error-bit for a selected bit of the input data; means for writing said error data and said parity data into a memory cell array; means for reading said error data and said parity data from the memory cell array; said parity generator means providing parity information based upon said error data and said parity data read from the memory cell array; and means for providing corrected data by changing said error-bit in said error data read from the memory cell array in response to said parity information.
Claim 19
Dependent Claim
128 words
A semiconductor memory device, comprising: input means for receiving input data; parity generator means arranged to receive said input data, for generating bits of parity data according to said input data; error-bit generating means, for generating error data by introducing an error-bit for a selected bit of the input data; means for writing said error data and said parity data into a memory cell array; means for reading said error data and said parity data from the memory cell array; said parity generator means providing parity information based upon said error data and said parity data read from the memory cell array; and means for providing corrected data by changing said error-bit in said error data read from the memory cell array in response to said parity information.
Claim 20
Dependent Claim
77 words
The semiconductor memory device of claim 15, wherein said error-bit generating means comprises: a plurality of NAND gates equal in number to the number of bits of said input data, for receiving a combination of a control signal and an address signal; and a plurality of Exclusive-NOR gates, with each of said plurality of Exclusive-NOR gates having a first input terminal coupled to corresponding ones of output ports of different ones of said plurality of NAND gates.
Claim 21
Dependent Claim
131 words
A process for using a semiconductor memory device, comprising: applying input data to the semiconductor memory device; generating bits of parity data within the semiconductor memory device, according to said input data; generating error data within said semiconductor memory device by replacing a selected bit of the input data with an error-bit; writing said error data and said parity data into a memory cell array within the semiconductor memory device; reading said error data and said parity data from the memory cell array; generating parity information within the semiconductor memory device in dependence upon said error data and said parity data read from the memory cell array; and providing corrected data by changing said error-bit in said error data read from the memory cell array in response to said parity information.
Claim 22
Dependent Claim
131 words
A process for using a semiconductor memory device, comprising: applying input data to the semiconductor memory device; generating bits of parity data within the semiconductor memory device, according to said input data; generating error data within said semiconductor memory device by replacing a selected bit of the input data with an error-bit; writing said error data and said parity data into a memory cell array within the semiconductor memory device; reading said error data and said parity data from the memory cell array; generating parity information within the semiconductor memory device in dependence upon said error data and said parity data read from the memory cell array; and providing corrected data by changing said error-bit in said error data read from the memory cell array in response to said parity information.
References Cited (Backward Citations)
US3568153A
Cited
US3868632A
Cited
US4112502A
Cited
US4604749A
Cited
US4561095A
Cited
US4672614A
Cited
US4821240A
Cited
US4780875A
Cited
US4878220A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-25 | 1996-02-24 | 1996-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-25 | 2000-02-24 | 2000-08-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-25 | 2004-02-24 | 2004-08-25 | $7700.00 | Window Closed / Lapsed |