Patent US5141897A successfully refreshed from Google Patents.
US5141897A
Expired / Lapsed
US
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Method of making integrated circuit interconnection
Assignee: Nokia Bell Labs
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Filing: 1991-05-14
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Granted: 1992-08-25
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Expires: 2011-05-14
Abstract
Abstract An integrated circuit and method of fabrication are disclosed. The invention provides an etch-stop layer between a plug formed in a via and an overlying runner. The etch stop layer serves a variety of functions, including protecting the plug during the etching process which defines the runner.
Inventors
- 👤 Ajit S. Manocha
- 👤 Virendra V. S. Rana
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 08:55
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/037; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10W20/036; H10W20/056; H10W20/069; H10W20/0693; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; Y; Y10; Y10S; Y10S438/00; Y10S438/97
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
98 words
A method of integrated circuit fabrication comprising the steps of: forming a dielectric layer having at least one opening; at least partially filling said opening with a first material; forming a second material layer in contact with said first material layer and with said dielectric layer; forming a third material layer on top of said second material layer; patterning, by a process which includes etching, said third material layer to form at least two runners, said second material layer serving as an etch stop; patterning said second material layer to form a patterned layer which connects said runners.
Claim 2
Independent Claim
98 words
A method of integrated circuit fabrication comprising the steps of: forming a dielectric layer having at least one opening; at least partially filling said opening with a first material; forming a second material layer in contact with said first material layer and with said dielectric layer; forming a third material layer on top of said second material layer; patterning, by a process which includes etching, said third material layer to form at least two runners, said second material layer serving as an etch stop; patterning said second material layer to form a patterned layer which connects said runners.
Claim 3
Dependent Claim
29 words
The method of claim 1 in which said first material is chosen from the group consisting of tungsten, aluminum, aluminum-rich mixtures, aluminum-rich alloys, copper, copper-rich mixtures, and copper-rich alloys.
Claim 4
Dependent Claim
24 words
The method of claim 1 in which said second material is chosen from the group consisting of tungsten silicide, titanium tungsten and titanium nitride.
Claim 5
Dependent Claim
33 words
The method of claim 1 in which said third material is chosen from the group consisting of tungsten, tungsten-rich mixtures, tungsten-rich alloys, aluminum, aluminum-rich mixtures, aluminum-rich alloys, copper, copper-rich mixtures, and copper-rich alloys.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-25 | 1996-02-24 | 1996-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-25 | 2000-02-24 | 2000-08-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-25 | 2004-02-24 | 2004-08-25 | $7700.00 | Window Closed / Lapsed |