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Patent US5141603A successfully refreshed from Google Patents.
US5141603A
Expired / Lapsed
US
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Capacitor method for improved oxide dielectric
Assignee: United States Department of the Air Force
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Filing: 1990-10-11
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Granted: 1992-08-25
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Expires: 2010-10-11
Abstract
Abstract Capacitor structure capable of achieving increased energy storage density is disclosed together with a fabrication sequence for the capacitor and its anodic oxide dielectric material. Soft porous aluminum oxide which has been formed in a first anodization step and has been densified or transformed to hard barrier oxide in a second anodization step is preferred for the capacitor dielectric material. The first anodization may be performed in a sulfuric acid electrolyte while the second anodization may be performed in a boric acid electrolyte. The boric acid may be diluted with ethylene glycol. The disclosed capacitor is fabricated on a silicon wafer substrate.
Inventors
- 👤 John R. Dickey
- 👤 Jimmy L. Davidson
- 👤 Yonhua Tzeng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:42
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; C; C25; C25D; C25D11/00; C25D11/02; C25D11/04; C25D11/12; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/10
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
205 words
A method for fabricating a capacitor having an aluminum oxide electrical insulation layer of dielectric breakdown capability exceeding the oxide formation voltage, on a silicon substrate supported sputtered metallic aluminum film comprising the steps of: forming on said silicon substrate supported sputtered metallic aluminum film a first electrolyte anodization layer of porous soft aluminum oxide, said forming step including soft anodizing in a sulfuric acid electrolyte maintained at a temperature of six degrees Celsius and also a constant anodizing current density per square centimeter of aluminum film surface; hard anodize transforming at least a portion of said porous soft aluminum oxide to a harder layer by anodizing in an ethylene glycol diluted aqueous boric acid electrolyte solution which has been adjusted to a pH of five to five and four tenths by the addition of ammonium hydroxide using a constant anodizing voltage or stepwise incremented successively larger magnitudes of constant anodizing voltage and terminating the hard anodizing when the anodizing current rate of change attains a non-zero value of 0.025 milliamperes per square centimeter per minute or less; and forming over said layers of aluminum oxide a second layer of aluminum which is electrically insulated from said sputtered metallic aluminum film by said oxide layers.
Claim 2
Independent Claim
205 words
A method for fabricating a capacitor having an aluminum oxide electrical insulation layer of dielectric breakdown capability exceeding the oxide formation voltage, on a silicon substrate supported sputtered metallic aluminum film comprising the steps of: forming on said silicon substrate supported sputtered metallic aluminum film a first electrolyte anodization layer of porous soft aluminum oxide, said forming step including soft anodizing in a sulfuric acid electrolyte maintained at a temperature of six degrees Celsius and also a constant anodizing current density per square centimeter of aluminum film surface; hard anodize transforming at least a portion of said porous soft aluminum oxide to a harder layer by anodizing in an ethylene glycol diluted aqueous boric acid electrolyte solution which has been adjusted to a pH of five to five and four tenths by the addition of ammonium hydroxide using a constant anodizing voltage or stepwise incremented successively larger magnitudes of constant anodizing voltage and terminating the hard anodizing when the anodizing current rate of change attains a non-zero value of 0.025 milliamperes per square centimeter per minute or less; and forming over said layers of aluminum oxide a second layer of aluminum which is electrically insulated from said sputtered metallic aluminum film by said oxide layers.
Claim 3
Dependent Claim
22 words
The method of claim 1 wherein said hard anodizing transforming step is performed using a constant anodizing voltage of three hundred volts.
Claim 4
Dependent Claim
26 words
The method of claim 2 wherein said hard anodize transforming step is terminated when the anodizing current rate of change falls below 0.4 milliamperes per minute.
Claim 5
Dependent Claim
10 words
The electrical capacitor formed by the process of claim 1.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-25 | 1996-02-24 | 1996-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-25 | 2000-02-24 | 2000-08-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-25 | 2004-02-24 | 2004-08-25 | $7700.00 | Window Closed / Lapsed |