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US5141603A Expired / Lapsed US ⏱️ 0.0 years remaining

Capacitor method for improved oxide dielectric

Assignee: United States Department of the Air Force
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Filing: 1990-10-11
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Granted: 1992-08-25
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Expires: 2010-10-11
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Abstract

Abstract Capacitor structure capable of achieving increased energy storage density is disclosed together with a fabrication sequence for the capacitor and its anodic oxide dielectric material. Soft porous aluminum oxide which has been formed in a first anodization step and has been densified or transformed to hard barrier oxide in a second anodization step is preferred for the capacitor dielectric material. The first anodization may be performed in a sulfuric acid electrolyte while the second anodization may be performed in a boric acid electrolyte. The boric acid may be diluted with ethylene glycol. The disclosed capacitor is fabricated on a silicon wafer substrate.

Inventors

  • 👤 John R. Dickey
  • 👤 Jimmy L. Davidson
  • 👤 Yonhua Tzeng

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 02:42
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; C; C25; C25D; C25D11/00; C25D11/02; C25D11/04; C25D11/12; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/10

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 205 words
A method for fabricating a capacitor having an aluminum oxide electrical insulation layer of dielectric breakdown capability exceeding the oxide formation voltage, on a silicon substrate supported sputtered metallic aluminum film comprising the steps of: forming on said silicon substrate supported sputtered metallic aluminum film a first electrolyte anodization layer of porous soft aluminum oxide, said forming step including soft anodizing in a sulfuric acid electrolyte maintained at a temperature of six degrees Celsius and also a constant anodizing current density per square centimeter of aluminum film surface; hard anodize transforming at least a portion of said porous soft aluminum oxide to a harder layer by anodizing in an ethylene glycol diluted aqueous boric acid electrolyte solution which has been adjusted to a pH of five to five and four tenths by the addition of ammonium hydroxide using a constant anodizing voltage or stepwise incremented successively larger magnitudes of constant anodizing voltage and terminating the hard anodizing when the anodizing current rate of change attains a non-zero value of 0.025 milliamperes per square centimeter per minute or less; and forming over said layers of aluminum oxide a second layer of aluminum which is electrically insulated from said sputtered metallic aluminum film by said oxide layers.
Claim 2
Independent Claim 205 words
A method for fabricating a capacitor having an aluminum oxide electrical insulation layer of dielectric breakdown capability exceeding the oxide formation voltage, on a silicon substrate supported sputtered metallic aluminum film comprising the steps of: forming on said silicon substrate supported sputtered metallic aluminum film a first electrolyte anodization layer of porous soft aluminum oxide, said forming step including soft anodizing in a sulfuric acid electrolyte maintained at a temperature of six degrees Celsius and also a constant anodizing current density per square centimeter of aluminum film surface; hard anodize transforming at least a portion of said porous soft aluminum oxide to a harder layer by anodizing in an ethylene glycol diluted aqueous boric acid electrolyte solution which has been adjusted to a pH of five to five and four tenths by the addition of ammonium hydroxide using a constant anodizing voltage or stepwise incremented successively larger magnitudes of constant anodizing voltage and terminating the hard anodizing when the anodizing current rate of change attains a non-zero value of 0.025 milliamperes per square centimeter per minute or less; and forming over said layers of aluminum oxide a second layer of aluminum which is electrically insulated from said sputtered metallic aluminum film by said oxide layers.
Claim 3
Dependent Claim 22 words
The method of claim 1 wherein said hard anodizing transforming step is performed using a constant anodizing voltage of three hundred volts.
Claim 4
Dependent Claim 26 words
The method of claim 2 wherein said hard anodize transforming step is terminated when the anodizing current rate of change falls below 0.4 milliamperes per minute.
Claim 5
Dependent Claim 10 words
The electrical capacitor formed by the process of claim 1.

References Cited (Backward Citations)

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US3270261A Cited
US2930951A Cited
US3254282A Cited
US3682790A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-08-25 1996-02-24 1996-08-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-08-25 2000-02-24 2000-08-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-08-25 2004-02-24 2004-08-25 $7700.00 Window Closed / Lapsed

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