US5140272A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of semiconductor surface measurment and an apparatus for realizing the same
Assignee: Hitachi Ltd
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Filing: 1988-09-23
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Granted: 1992-08-18
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Expires: 2008-09-23
Abstract
Abstract A method of semiconductor surface measurement for measuring electrical characteristics of a surface of a semiconductor body is disclosed, by which an electrode, whose surface, which is opposite to the surface of a semiconductor substrate, is flat and the gap between the electrode and the surface is smaller than 0.5 μm.
Inventors
- 👤 Shigeru Nishimatsu
- 👤 Tatsumi Mizutani
- 👤 Ryo Haruta
- 👤 Kanji Tsujii
- 👤 Chusuke Munakata
- 👤 Shigeyuki Hosoki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 00:57
CPC Classifications
G; G01; G01R; G01R29/00; G01R29/24; G01R27/00; G01R27/02; G01R27/26; G01R27/2605
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
104 words
An apparatus of semiconductor surface measurement, comprising: a sample table, on which a semiconductor sample is located; a plate electrode, which is located so as to be opposite to said semiconductor sample with such a gap that it is disconnected with respect to DC and connected with respect to AC; means for regulating the gap between said plate electrode and said semiconductor sample; means for holding the surface parallelism between said plate electrode and said semiconductor sample; means for irradiating said semiconductor sample with light through said electrode; and means for measuring the voltage induced by light at the surface of said semiconductor sample.
Claim 2
Independent Claim
104 words
An apparatus of semiconductor surface measurement, comprising: a sample table, on which a semiconductor sample is located; a plate electrode, which is located so as to be opposite to said semiconductor sample with such a gap that it is disconnected with respect to DC and connected with respect to AC; means for regulating the gap between said plate electrode and said semiconductor sample; means for holding the surface parallelism between said plate electrode and said semiconductor sample; means for irradiating said semiconductor sample with light through said electrode; and means for measuring the voltage induced by light at the surface of said semiconductor sample.
Claim 3
Dependent Claim
17 words
An apparatus according to claim 1, wherein the size of said gap is smaller than 0.5 μm.
Claim 4
Dependent Claim
28 words
An apparatus according to claim 1, wherein said plate electrode is made of a silicon wafer strongly doped with impurity selected from arsenic, phosphor, or boron and mirror-polished.
Claim 5
Dependent Claim
14 words
An apparatus according to claim 1, wherein the space forming said gap is evacuated.
Claim 6
Dependent Claim
18 words
An apparatus according to claim 1, wherein the space forming said gap is filled with gas or liquid.
Claim 7
Dependent Claim
20 words
An apparatus according to claim 1, wherein said gap regulating means comprises: means for varying the size of said gap.
Claim 8
Dependent Claim
29 words
An apparatus according to claim 1, wherein said gap regulating means comprises: means for oscillating said plate electrode in the direction perpendicular to the surface of said semiconductor sample.
Claim 9
Dependent Claim
27 words
An apparatus according to claim 1, wherein said surface parallelism holding means includes: means for detecting the surface parallelism between said plate electrode and said semiconductor sample.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-18 | 1996-02-17 | 1996-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-18 | 2000-02-17 | 2000-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-18 | 2004-02-17 | 2004-08-18 | $7700.00 | Window Closed / Lapsed |