Noninvasive method and apparatus for characterization of semiconductors

Claim 1

A method of determining the surface state density of a specimen of semiconductor material in a range of surface potentials V s1 to V s2 differing by ΔV s , the specimen having a known energy gap and having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, c. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor and being intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) between the pair of electrodes, e. providing a signal δV s representing the surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, f. the intensity of the light beam and frequency of modulation of the light beam selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, g. determining the space charage capacitance (C sc ) from measured surface photovoltage (SPV), h. determining the charge induced in the semiconductor space-charge region (Q sc ) from the space charge capacitance (C sc ), i. determining the charge induced in the semiconductor (Q ind ) from the bias voltage (V g ), and then j. determining the surface state density using Q ind , Q sc and V s .

Claim 2

A method of determining the surface state density of a specimen of semiconductor material in a range of surface potentials V s1 to V s2 differing by ΔV s , the specimen having a known energy gap and having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, c. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor and being intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) between the pair of electrodes, e. providing a signal δV s representing the surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, f. the intensity of the light beam and frequency of modulation of the light beam selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, g. determining the space charage capacitance (C sc ) from measured surface photovoltage (SPV), h. determining the charge induced in the semiconductor space-charge region (Q sc ) from the space charge capacitance (C sc ), i. determining the charge induced in the semiconductor (Q ind ) from the bias voltage (V g ), and then j. determining the surface state density using Q ind , Q sc and V s .

Claim 3

A method of determining the surface state density of a specimen of semiconductor material in a range of surface potentials V s1 to V s2 differing by ΔV s , the specimen having a known energy gap and having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, c. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) between the pair of electrodes, e. providing a signal δV s representing the surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, f. the intensity of the light beam and frequency of modulation of the light beam being selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, g. determining the space charge capacitance (C sc ) from the signal representing the surface photovoltage (SPV) using the equation ##EQU4## where φ is the incident photon flux, R is the reflection coefficient of the specimen, f is the modulation frequency, q is an elementary charge and K is 4 if the intensity modulation is square wave and 2π if it is sinusoidal, h. determining the change in the width of the depletion layer ΔW using the equation ΔW=ε s ×Δ(1/c sc ) where ε s is the permittivity of the semiconductor, i. determining the change of the semiconductor space-charge ΔQ sc , using the equation ΔQ sc =qN sc ΔW, where N sc is the average doping concentration in the space charge region and q is an elementary charge, j. determining the charge induced in the semiconductor (Q ind ) from the bias voltage (V g ), k. determining the change of the surface state charge ΔQ ss using the equation ΔQ ss =ΔQ ind -ΔQ sc , and then, l. determining the surface state density D it using the equation D it =ΔQ ss /qΔV s , where ss is equal to the change in the charge of the surface state, V s is equal to the change in the surface potential and q is an elementary charge.

Claim 4

A method of determining the surface state density of a specimen of semiconductor material in a range of surface potentials V s1 to V s2 differing by ΔV s , the specimen having a known energy gap and having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, c. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) between the pair of electrodes, e. providing a signal δV s representing the surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, f. the intensity of the light beam and frequency of modulation of the light beam being selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, g. determining the space charge capacitance (C sc ) from the signal representing the surface photovoltage (SPV) using the equation ##EQU4## where φ is the incident photon flux, R is the reflection coefficient of the specimen, f is the modulation frequency, q is an elementary charge and K is 4 if the intensity modulation is square wave and 2π if it is sinusoidal, h. determining the change in the width of the depletion layer ΔW using the equation ΔW=ε s ×Δ(1/c sc ) where ε s is the permittivity of the semiconductor, i. determining the change of the semiconductor space-charge ΔQ sc , using the equation ΔQ sc =qN sc ΔW, where N sc is the average doping concentration in the space charge region and q is an elementary charge, j. determining the charge induced in the semiconductor (Q ind ) from the bias voltage (V g ), k. determining the change of the surface state charge ΔQ ss using the equation ΔQ ss =ΔQ ind -ΔQ sc , and then, l. determining the surface state density D it using the equation D it =ΔQ ss /qΔV s , where ss is equal to the change in the charge of the surface state, V s is equal to the change in the surface potential and q is an elementary charge.

Claim 5

A method of determining the value of the charge, Q ox , in the oxide/insulator which is on a surface of a specimen of semiconductor material, the specimen having a known energy gap and having the surface under examination arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, c. illuminating a region of the surface of the specimen with a beam of light of a wavelength shorter than that of the energy gap of the semiconductor and being intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) between the pair of electrodes, e. providing a signal δV s representing the surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, f. the intensity of the light beam and frequency of modulation of the light beam being selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, g. determining the space charge capacitance (C sc ) from measured surface photovoltage (SPV), h. determining the charge induced in the semiconductor space-charge region (Q sc ) from the space charge capacitance (C sc ), i. determining the charge induced in the semiconductor (Q ind ) from the bias voltage (V g ), and then j. determining the oxide charge, Q ox , using Q ind and Q sc where Q ind and Q sc are the induced charge in the semiconductor and the charge in the space charge region, respectively at the bias voltage.

Claim 6

A method of determining the value of the charge, Q ox , in the oxide/insulator which is on a surface of a specimen of semiconductor material, the specimen having a known energy gap and having the surface under examination arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, c. illuminating a region of the surface of the specimen with a beam of light of a wavelength shorter than that of the energy gap of the semiconductor and being intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) between the pair of electrodes, e. providing a signal δV s representing the surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, f. the intensity of the light beam and frequency of modulation of the light beam being selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, g. determining the space charge capacitance (C sc ) from measured surface photovoltage (SPV), h. determining the charge induced in the semiconductor space-charge region (Q sc ) from the space charge capacitance (C sc ), i. determining the charge induced in the semiconductor (Q ind ) from the bias voltage (V g ), and then j. determining the oxide charge, Q ox , using Q ind and Q sc where Q ind and Q sc are the induced charge in the semiconductor and the charge in the space charge region, respectively at the bias voltage.

Claim 7

A method of determining the doping type of a specimen of semiconductor material having a known energy gap and having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, c. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor and being intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) between the pair of electrodes to the semiconductor, e. providing a signal δV s representing surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, f. the intensity of the light beam and frequency of modulation of the light beam being selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, and g. the SPV signal having a real component and an imaginary component, the polarity of the imaginary component being related to the doping type.

Claim 8

A method of determining the doping type of a specimen of semiconductor material having a known energy gap and having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, c. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor and being intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) between the pair of electrodes to the semiconductor, e. providing a signal δV s representing surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, f. the intensity of the light beam and frequency of modulation of the light beam being selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, and g. the SPV signal having a real component and an imaginary component, the polarity of the imaginary component being related to the doping type.

Claim 9

A method of determining the doping concentration of a specimen of semiconductor material having a known energy gap and having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, c. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor and intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) between the pair of electrodes, e. providing a signal δV s representing the surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, f. the intensity of the light beam and frequency of modulation of the light beam being selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, PG,33 g. determining the space charge capacitance (C sc ) from measured surface photovoltage (SPV), and then h. determining the doping concentration using C sc .

Claim 10

A method of determining the doping concentration of a specimen of semiconductor material having a known energy gap and having a surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, c. illuminating a region of the surface of the specimen arranged for illumination with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor and intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) between the pair of electrodes, e. providing a signal δV s representing the surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, f. the intensity of the light beam and frequency of modulation of the light beam being selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, PG,33 g. determining the space charge capacitance (C sc ) from measured surface photovoltage (SPV), and then h. determining the doping concentration using C sc .

Claim 11

A method of determining the value of the charge, Q ox , in the oxide/insulator which is on a surface of a specimen of semiconductor material, the specimen having a known energy gap and the surface being arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, c. illuminating a region of the surface of the specimen with a beam of light wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) between the pair of electrodes, e. providing a signal δV s representing the surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, f. the intensity of the light beam and frequency of modulation of the light beam being selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, g. determining the space charge capacitance (C sc ) from the signal representing the surface photovoltage (SPV) using the equation ##EQU5## where is the incident photon flex, R is the reflection coefficient of the specimen, f is the modulation frequency q is an elementary charge and K is 4 if the intensity modulation is square wave and 2π if it is sinusoidal, h. determining the semiconductor space-charge (Q sc ) from the space charge capacitance (C sc ), using the equation Q sc =qN sc W where N sc is the average doping concentration in the space charge region, W is width of the depletion layer and q is an elementary charge, i. determining the charge induced in the semiconductor (Q ind ) from the bias voltage (V g ), and then, j. determining the oxide/insulator charge using the equation Q ox =Q ind -Q sc where Q ind and Q sc are the induced charge in the specimen and the semiconductor space charge, respectively.

Claim 12

A method of determining the value of the charge, Q ox , in the oxide/insulator which is on a surface of a specimen of semiconductor material, the specimen having a known energy gap and the surface being arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, c. illuminating a region of the surface of the specimen with a beam of light wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) between the pair of electrodes, e. providing a signal δV s representing the surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, f. the intensity of the light beam and frequency of modulation of the light beam being selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, g. determining the space charge capacitance (C sc ) from the signal representing the surface photovoltage (SPV) using the equation ##EQU5## where is the incident photon flex, R is the reflection coefficient of the specimen, f is the modulation frequency q is an elementary charge and K is 4 if the intensity modulation is square wave and 2π if it is sinusoidal, h. determining the semiconductor space-charge (Q sc ) from the space charge capacitance (C sc ), using the equation Q sc =qN sc W where N sc is the average doping concentration in the space charge region, W is width of the depletion layer and q is an elementary charge, i. determining the charge induced in the semiconductor (Q ind ) from the bias voltage (V g ), and then, j. determining the oxide/insulator charge using the equation Q ox =Q ind -Q sc where Q ind and Q sc are the induced charge in the specimen and the semiconductor space charge, respectively.

Claim 13

A method of determining the doping type of a specimen of semiconductor material, the specimen having energy gap and having a first surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, c. illuminating a region of the first surface of the specimen with a bea of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) to the specimen, and e. providing a signal δV s representing the surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, the signal having a real component and an imaginary component, f. the intensity of the light beam and frequency of modulation of the light beam being selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, g. the polarity of the imaginary component being related to the doping type.

Claim 14

A method of determining the doping type of a specimen of semiconductor material, the specimen having energy gap and having a first surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. positioning the specimen between the pair of electrodes, c. illuminating a region of the first surface of the specimen with a bea of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) to the specimen, and e. providing a signal δV s representing the surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, the signal having a real component and an imaginary component, f. the intensity of the light beam and frequency of modulation of the light beam being selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, g. the polarity of the imaginary component being related to the doping type.

Claim 15

A method of determining the doping concentration of a specimen of semiconductor material, the specimen having a known energy gap and having a first surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. position the specimen between the pair of electrodes, c. illuminating a region of the first surface of the specimen with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) between the two electrodes, e. providing a signal δV s representing the surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, f. the intensity of the light beam and frequency of modulation of the light beam being selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, g. determining the space charge capacitance (C sc from the signal representing the surface photovoltage (SPV) using the equation ##EQU6## where φ is the incident photon flux, R is the reflection coefficient of the specimen, f is the modulation frequency, q is an elementary charge and K is 4 if the intensity modulation is square wave and 2π if it is sinusoidal, h. determining the maximum depletion layer width W m using the equation (1/C sc ) max =W m ε s , where ε s is the permittivity of the specimen, and then i. determining the doping concentration using W m .

Claim 16

A method of determining the doping concentration of a specimen of semiconductor material, the specimen having a known energy gap and having a first surface arranged for illumination, the method comprising: a. providing a pair of electrodes, b. position the specimen between the pair of electrodes, c. illuminating a region of the first surface of the specimen with a beam of light of wavelengths shorter than that of the energy gap of the semiconductor, the beam of light being intensity modulated at a predetermined frequency, d. applying a variable bias voltage (V g ) between the two electrodes, e. providing a signal δV s representing the surface photovoltage (SPV) induced at the region of the specimen illuminated by the light beam, f. the intensity of the light beam and frequency of modulation of the light beam being selected so that the surface photovoltage (SPV) is directly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam, g. determining the space charge capacitance (C sc from the signal representing the surface photovoltage (SPV) using the equation ##EQU6## where φ is the incident photon flux, R is the reflection coefficient of the specimen, f is the modulation frequency, q is an elementary charge and K is 4 if the intensity modulation is square wave and 2π if it is sinusoidal, h. determining the maximum depletion layer width W m using the equation (1/C sc ) max =W m ε s , where ε s is the permittivity of the specimen, and then i. determining the doping concentration using W m .