Patent US5139970A successfully refreshed from Google Patents.
US5139970A
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Electric device and manufacturing method of the same
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1991-05-08
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Granted: 1992-08-18
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Expires: 2011-05-08
Abstract
Abstract An electric device comprises a crystalline film deposited on a substrate and an electrode formed on the film. The crystalline film consists of a number of colomnar crystals grown at right angles from the surface of the substrate. There are many grain boundaries passing through the crystalline film from the substrate surface to the electrode. The direct contact between the electrode and the grain boundaries is prevented by means of an insulating coating applied only to the portion of surfaces of the columnar crystals where the boundaries appear.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:23
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/26; C23C16/27; C23C16/274; C23C16/278; C23C16/30; C23C16/34; C23C16/342; H; H10; H10D; H10D62/00; H10D62/10; H10D62/113; H10D62/115; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/014; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/826; H10H20/83; H10H20/832; H10K; H10K10/00; H10K10/80; H10H20/84; Y; Y10; Y10S; Y10S438/00; Y10S438/932
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
58 words
A method of forming electric device comprising: forming on a substrate a polycrystalline film of at least one of diamond or boron nitride having pinholes passing therethrough; filling said pinholes with an insulating material; and forming an electrode pattern directly on said film, wherein said electrode pattern is insulated from said pinholes by means of said insulating material.
Claim 2
Independent Claim
58 words
A method of forming electric device comprising: forming on a substrate a polycrystalline film of at least one of diamond or boron nitride having pinholes passing therethrough; filling said pinholes with an insulating material; and forming an electrode pattern directly on said film, wherein said electrode pattern is insulated from said pinholes by means of said insulating material.
Claim 3
Independent Claim
45 words
A method of forming electric device comprising: preparing diamond and/or boron nitride; providing said diamond and/or boron nitride with recombination centers by scratching a surface of said diamond and/or boron nitride; and forming an electrode pattern on a surface of said diamond and/or boron nitride.
Claim 4
Independent Claim
45 words
A method of forming electric device comprising: preparing diamond and/or boron nitride; providing said diamond and/or boron nitride with recombination centers by scratching a surface of said diamond and/or boron nitride; and forming an electrode pattern on a surface of said diamond and/or boron nitride.
Claim 5
Dependent Claim
13 words
The method of claim 2 wherein said recombination centers are light emitting centers.
Claim 6
Dependent Claim
36 words
The method of claim 2 wherein the scratch of said surface is carried out by putting said diamond and/or boron nitride in a liquid in which diamond fine particles are dispersed and applying ultrasonic waves thereto.
Claim 7
Dependent Claim
16 words
The method of claim 2 wherein said diamond is a diamond film formed on a substrate.
Claim 8
Independent Claim
78 words
A method of forming electric device comprising: growing columnar crystals made from diamond or boron nitride on a substrate in the form of crystalline layer; coating an insulating material on said layer in order that only the top surfaces of said columnar crystals are exposed and that spaces between adjacent crystals are filled with said insulating material; and forming an electrode arrangement on said layer in contact with the top surfaces of said crystals and said insulating coating.
Claim 9
Independent Claim
78 words
A method of forming electric device comprising: growing columnar crystals made from diamond or boron nitride on a substrate in the form of crystalline layer; coating an insulating material on said layer in order that only the top surfaces of said columnar crystals are exposed and that spaces between adjacent crystals are filled with said insulating material; and forming an electrode arrangement on said layer in contact with the top surfaces of said crystals and said insulating coating.
Claim 10
Dependent Claim
60 words
A method of claim 6 wherein said coating procedure comprises the steps of coating a photoresist film on said crystalline layer, curing said photoresist film by illumination to a plane parallel to the lower electrode and slightly lower than top surfaces of said columnar crystals and removing a portion of the photoresist film which is located higher than said plane.
Claim 11
Dependent Claim
19 words
The method of claim 6 wherein said photoresist is positive and said illumination is effected from the upper side.
Claim 12
Dependent Claim
36 words
The method of claim 6 wherein said insulating coating is an inorganic glass formed by applying an organic glass coating to said crystalline layer and removing the organic component of said organic glass by thermal treatment.
Claim 13
Dependent Claim
35 words
The method of claim 9 wherein said crystalline layer is treated by silicon in advance of formation of said insulating coating in order to form silicon carbide between said crystalline layer and said insulating coating.
Claim 14
Dependent Claim
38 words
The method of claim 6 further comprising a step of scratching, in advance of formation of said crystalline layer, said substrate in order to form fine scratches which function as focusses of the growth of said columnar crystals.
Claim 15
Dependent Claim
15 words
The method of claim 6 wherein said columnar crystals are grown by chemical vapor deposition.
Claim 16
Dependent Claim
63 words
The method of claim 12 wherein said chemical vapor deposition is carried out by use of a reactive gas selected from the group consisting of B 2 H 6 , BF 3 , organic boron compounds, B(CH 3 ) 3 , NH 3 , N 2 , NF 3 , and NH 4 BF 4 in order to grow boron nitride columnar crystals.
Claim 17
Independent Claim
70 words
A method of forming an electric device comprising: forming on a substrate a polycrystalline film having pinholes passing therethrough and recesses at grain boundaries between adjacent crystals of the film; at least partially filling said pinholes and recesses with an insulating material; and forming an electrode pattern directly on said film, wherein said electrode pattern is insulated from said pinholes and said grain boundaries by means of said insulating material.
Claim 18
Independent Claim
70 words
A method of forming an electric device comprising: forming on a substrate a polycrystalline film having pinholes passing therethrough and recesses at grain boundaries between adjacent crystals of the film; at least partially filling said pinholes and recesses with an insulating material; and forming an electrode pattern directly on said film, wherein said electrode pattern is insulated from said pinholes and said grain boundaries by means of said insulating material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-18 | 1996-02-17 | 1996-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-18 | 2000-02-17 | 2000-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-18 | 2004-02-17 | 2004-08-18 | $7700.00 | Window Closed / Lapsed |