US4786607A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a semiconductor device free from current leakage through a semiconductor layer
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1987-09-04
•
Granted: 1988-11-22
•
Expires: 2007-09-04
Abstract
Abstract An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processsing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.
Inventors
- 👤 Shumpei Yamazaki
- 👤 Kunio Suzuki
- 👤 Mikio Kinka
- 👤 Takeshi Fukada
- 👤 Masayoshi Abe
- 👤 Ippei Kobayashi
- 👤 Katsuhiko Shibata
- 👤 Masato Susukida
- 👤 Susumu Nagayama
- 👤 Kaoru Koyanagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:05
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/30; H10F77/306; H10F77/311; H10F19/00; H10F19/30; H10F19/31; H10F71/00; H10F71/10; H10F71/135; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S136/00; Y10S136/29
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
110 words
A method of manufacturing a semiconductor device comprising: forming a first electrode on a substrate; forming a rectifying semiconductor layer on said electrode; applying a photocurable resin over said semiconductor layer to fill defects of said semiconductor layer with said resin; irradiating said photocurable resin to render portions of said resin inside said defect insoluble and the remaining portion soluble to a solvent; removing said soluble portion of said resin with said solvent; forming a second electrode on said semiconductor layer; and burning out any remaining defects forming short-current paths by applying a reverse voltage between said first and second electrodes less than the breakdown voltage of said semiconductor layer.
Claim 2
Independent Claim
110 words
A method of manufacturing a semiconductor device comprising: forming a first electrode on a substrate; forming a rectifying semiconductor layer on said electrode; applying a photocurable resin over said semiconductor layer to fill defects of said semiconductor layer with said resin; irradiating said photocurable resin to render portions of said resin inside said defect insoluble and the remaining portion soluble to a solvent; removing said soluble portion of said resin with said solvent; forming a second electrode on said semiconductor layer; and burning out any remaining defects forming short-current paths by applying a reverse voltage between said first and second electrodes less than the breakdown voltage of said semiconductor layer.
Claim 3
Dependent Claim
22 words
A method of claim 1 wherein said reverse voltage applying step is carried out at a high temperature of the semiconductor layer.
Claim 4
Dependent Claim
23 words
A method of claim 2 wherein said high temperature is chosen not so high as to degrade the characteristics of the semiconductor layer.
Claim 5
Dependent Claim
21 words
A method of claim 1 wherein said semiconductor device comprises a plurality of solar cells connected to each other in series.
Claim 6
Dependent Claim
43 words
A method of claim 4 wherein said applying step is carried out with a voltage source and a plurality of zener diodes which are connected to each other in series, the reverse voltage applied to each cell being derived from a respective diode.
Claim 7
Dependent Claim
14 words
The method of claim 1 wherein said semiconductor layer incorporates a pin junction therein.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-22 | 1992-05-23 | 1992-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-22 | 1996-05-23 | 1996-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-22 | 2000-05-23 | 2000-11-22 | $7700.00 | Window Closed / Lapsed |