US5055416A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces
Assignee: 3M Co
•
Filing: 1988-12-07
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Granted: 1991-10-08
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Expires: 2008-12-07
Abstract
Abstract A method for preventing shorts and shunts in solar cells having in order, an insulating substrate, a conductive metal layer on the substrate, an amorphous silicon layer and a transparent conductive layer. The method includes anodic etching of exposed portions of the metal layer after deposition of the amorphous silicon and prior to depositing the transparent conductive layer.
Inventors
- 👤 Michael F. Weber
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 02:04
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/107; H10F77/00; H10F77/20; H10F77/244; H10F77/247; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S136/00; Y10S136/29
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
82 words
A method for preparing an amorphous silicon p-i-n solar cell which incorporates a conductive metal layer interposed between an insulating substrate layer and the p layer of the solar cell and a transparent conductive layer overlying the n layer of the solar cell, the method comprising: anodically etching any exposed portions of the metal layer, after deposition of the amorphous silicon and prior to application of the transparent conductive layer, to substantially prevent shorts or shunts being formed in the solar cell.
Claim 2
Independent Claim
82 words
A method for preparing an amorphous silicon p-i-n solar cell which incorporates a conductive metal layer interposed between an insulating substrate layer and the p layer of the solar cell and a transparent conductive layer overlying the n layer of the solar cell, the method comprising: anodically etching any exposed portions of the metal layer, after deposition of the amorphous silicon and prior to application of the transparent conductive layer, to substantially prevent shorts or shunts being formed in the solar cell.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein the anodic etching involves an electrolyte solution contacting a cathode.
Claim 4
Dependent Claim
14 words
The method of claim 2 wherein the electrolyte solution further contacts a reference electrode.
Claim 5
Dependent Claim
40 words
The method of claim 3 wherein the conductive metal layer is aluminum, the reference electrode is a dynamic hydrogen electrode and the metal layer has a potential, relative to the dynamic hydrogen electrode, from about 1.0 to about 3.0 volts.
Claim 6
Dependent Claim
16 words
The method of claim 4 wherein the potential is from about 1.5 to about 2.0 volts.
Claim 7
Dependent Claim
24 words
The method of claim 1 wherein the conductive metal layer is chosen from the group consisting of aluminum, nickel, silver, tin and stainless steel.
Claim 8
Dependent Claim
13 words
The method of claim 2 wherein the electrolyte solution is an alkaline solution.
Claim 9
Dependent Claim
13 words
The method of claim 2 wherein the electrolyte solution consists of volatile components.
Claim 10
Dependent Claim
13 words
The method of claim 2 wherein the electrolyte solution is an aqueous solution.
Claim 11
Dependent Claim
12 words
The method of claim 7 wherein the electrolyte solution includes ammonium hydroxide.
Claim 12
Independent Claim
87 words
A method for forming a silicon device having a metal conductive layer on an insulating substrate, a second conductive layer, and at least one interposed amorphous silicon layer, the device substantially free of shorts or shunts between the metal conductive layer and the second conductive layer, the method comprising: providing a conductive metal layer; depositing a silicon layer upon the conductive metal layer so as to generally cover the conductive metal layer; anodic etching of any remaining uncovered conductive metal layer; and depositing the second conductive layer.
Claim 13
Independent Claim
87 words
A method for forming a silicon device having a metal conductive layer on an insulating substrate, a second conductive layer, and at least one interposed amorphous silicon layer, the device substantially free of shorts or shunts between the metal conductive layer and the second conductive layer, the method comprising: providing a conductive metal layer; depositing a silicon layer upon the conductive metal layer so as to generally cover the conductive metal layer; anodic etching of any remaining uncovered conductive metal layer; and depositing the second conductive layer.
Claim 14
Dependent Claim
27 words
The method of claim 11 further comprising: precoating the silicon layer with a thin precoat layer of a transparent conductive oxide, effective to prevent oxidation of silicon.
Claim 15
Dependent Claim
38 words
The method of claim 12, wherein the precoat layer comprises: ZnO (optionally doped with Al, In, Ga, or B); SnO 2 (doped with F or Sb); CdSnO 4 ; TiO 2 (doped with F), or SrTiO 2 .
Claim 16
Independent Claim
82 words
A method for preparing an amorphous silicon n-i-p solar cell which incorporates a conductive metal layer interposed between an insulating substrate layer and the n layer of the solar cell and a transparent conductive layer overlying the p layer of the solar cell, the method comprising: anodically etching any exposed portions of the metal layer, after deposition of the amorphous silicon and prior to application of the transparent conductive layer, to substantially prevent shorts or shunts being formed in the solar cell.
Claim 17
Independent Claim
82 words
A method for preparing an amorphous silicon n-i-p solar cell which incorporates a conductive metal layer interposed between an insulating substrate layer and the n layer of the solar cell and a transparent conductive layer overlying the p layer of the solar cell, the method comprising: anodically etching any exposed portions of the metal layer, after deposition of the amorphous silicon and prior to application of the transparent conductive layer, to substantially prevent shorts or shunts being formed in the solar cell.
Claim 18
Dependent Claim
16 words
The method of claim 14 wherein the anodic etching involves an electrolyte solution contacting a cathode.
Claim 19
Dependent Claim
14 words
The method of claim 15 wherein the electrolyte solution further contacts a reference electrode.
Claim 20
Dependent Claim
40 words
The method of claim 16 wherein the conductive metal layer is aluminum, the reference electrode is a dynamic hydrogen electrode and the metal layer has a potential, relative to the dynamic hydrogen electrode, from about 1.0 to about 3.0 volts.
Claim 21
Dependent Claim
16 words
The method of claim 17 wherein the potential is from about 1.5 to about 2.0 volts.
Claim 22
Dependent Claim
24 words
The method of claim 14 wherein the conductive metal layer is chosen from the group consisting of aluminum, nickel, silver, tin and stainless steel.
Claim 23
Dependent Claim
12 words
The method of claim 15 wherein the electrolyte solution includes amonium hydroxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-10-07 | 1995-04-08 | 1995-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-07 | 1999-04-08 | 1999-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-07 | 2003-04-08 | 2003-10-08 | $7700.00 | Window Closed / Lapsed |