Method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization

Claim 1

A method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization, which comprises the steps of: (a) forming electrode regions on a substrate by etching an insulating film formed on the substrate; (b) anodizing the electrode regions with the substrate as an anode; and (c) forming a common electrode on the electrode regions, whereby only defective electrode regions are anodized into silicon oxide for insulating the defective electrode regions from the common electrode.

Claim 2

A method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization, which comprises the steps of: (a) forming electrode regions on a substrate by etching an insulating film formed on the substrate; (b) anodizing the electrode regions with the substrate as an anode; and (c) forming a common electrode on the electrode regions, whereby only defective electrode regions are anodized into silicon oxide for insulating the defective electrode regions from the common electrode.

Claim 7

A method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization which comprises the steps of: (a) forming a first silicon oxide gate film on a surface of a N-type semiconductor drain substrate; (b) forming a poly-silicon gate electrode film on the first silicon oxide gate film; (c) etching the poly-silicon gate electrode film into a predetermined gate electrode pattern and the first silicon oxide film into a predetermined source region pattern; (d) forming a P-type wells, N + -type source regions and P + -type isolation region on the exposed N-type semiconductor drain substrate to provide a plurality of source regions; (e) forming a second silicon oxide insulating film on the substrate; (f) etching the second silicon oxide insulating film into a predetermined source region pattern; (g) anodizing the substrate with the substrate as an anode; (h) forming an aluminum conductive film on the substrate; and (i) etching the aluminum conductive film into a predetermined common source electrode connected to a plurality of the source regions; whereby only defective source regions are anodized into silicon oxide for insulating the defective source regions from the aluminum common source electrode.

Claim 8

A method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization which comprises the steps of: (a) forming a first silicon oxide gate film on a surface of a N-type semiconductor drain substrate; (b) forming a poly-silicon gate electrode film on the first silicon oxide gate film; (c) etching the poly-silicon gate electrode film into a predetermined gate electrode pattern and the first silicon oxide film into a predetermined source region pattern; (d) forming a P-type wells, N + -type source regions and P + -type isolation region on the exposed N-type semiconductor drain substrate to provide a plurality of source regions; (e) forming a second silicon oxide insulating film on the substrate; (f) etching the second silicon oxide insulating film into a predetermined source region pattern; (g) anodizing the substrate with the substrate as an anode; (h) forming an aluminum conductive film on the substrate; and (i) etching the aluminum conductive film into a predetermined common source electrode connected to a plurality of the source regions; whereby only defective source regions are anodized into silicon oxide for insulating the defective source regions from the aluminum common source electrode.

Claim 12

A method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization which comprises the following steps of: (a) forming a P-type region on a surface of a N-type semiconductor collector substrate; (b) forming N + -type emitter regions and P + -type base regions on the P-type region; (c) forming a silicon oxide film on the substrate; (d) etching the silicon oxide film into a predetermined emitter electrode pattern and a predetermined base electrode pattern; (e) anodizing the substrate with the substrate as an anode; (f) forming an aluminum conductive film on the substrate; and (g) etching the aluminum conductive film into a predetermined common emitter electrode connected to a plurality of the emitter regions and into a predetermined common base electrode connected to a plurality of the base regions, whereby only defective emitter regions are anodized into silicon oxide for insulating the defective emitter from the common emitter electrode.

Claim 13

A method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization which comprises the following steps of: (a) forming a P-type region on a surface of a N-type semiconductor collector substrate; (b) forming N + -type emitter regions and P + -type base regions on the P-type region; (c) forming a silicon oxide film on the substrate; (d) etching the silicon oxide film into a predetermined emitter electrode pattern and a predetermined base electrode pattern; (e) anodizing the substrate with the substrate as an anode; (f) forming an aluminum conductive film on the substrate; and (g) etching the aluminum conductive film into a predetermined common emitter electrode connected to a plurality of the emitter regions and into a predetermined common base electrode connected to a plurality of the base regions, whereby only defective emitter regions are anodized into silicon oxide for insulating the defective emitter from the common emitter electrode.