US4420497A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of detecting and repairing latent defects in a semiconductor dielectric layer
Assignee: National Semiconductor Corp
•
Filing: 1981-08-24
•
Granted: 1983-12-13
•
Expires: 2001-08-24
Abstract
Abstract Defects in dielectric layers exhibiting low dielectric strength on silicon substrates (11) are deliberately damaged during manufacture to allow their repair by the formation of dielectric plugs (13B). The defects are damaged by the application of an electric field, and are repaired by the selective oxidation or nitridation of the silicon substrate underlying the damaged areas of dielectrics.
Inventors
- 👤 Andrew C. Tickle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 02:37
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P95/00; H10P95/80
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
118 words
The method of detecting and repairing latent defects in a dielectric layer on a semiconductor substrate on which a circuit is to be formed which comprises: electrically stressing the dielectric layer prior to completion of the circuit to be formed on said substrate by applying a voltage across said layer of a voltage value substantially that to which the region of said dielectric layer not containing latent defects is capable of being subjected without damage so as to damage weak areas of said dielectric layer; and forming additional dielectric on those regions of the semiconductor substrate beneath the weak areas of dielectric damaged by said voltage prior to completion of the circuit to be formed on said substrate.
Claim 2
Independent Claim
118 words
The method of detecting and repairing latent defects in a dielectric layer on a semiconductor substrate on which a circuit is to be formed which comprises: electrically stressing the dielectric layer prior to completion of the circuit to be formed on said substrate by applying a voltage across said layer of a voltage value substantially that to which the region of said dielectric layer not containing latent defects is capable of being subjected without damage so as to damage weak areas of said dielectric layer; and forming additional dielectric on those regions of the semiconductor substrate beneath the weak areas of dielectric damaged by said voltage prior to completion of the circuit to be formed on said substrate.
Claim 3
Dependent Claim
39 words
The method of claim 1 wherein said voltage stress value is greater than the maximum voltage to which said dielectric layer will be subjected in the operation of a finished product made using said substrate and said dielectric layer.
Claim 4
Dependent Claim
39 words
The method of claim 1 wherein said voltage stress value is equal to the maximum voltage to which said dielectric layer will be subjected in the operation of a finished product made using said substrate and said dielectric layer.
Claim 5
Dependent Claim
33 words
The method of claim 1 wherein said dielectric layer comprises a layer of oxide of silicon formed on a silicon substrate and a layer of silicon nitride formed on said layer of oxide.
Claim 6
Dependent Claim
14 words
The method of claim 4 wherein said additional dielectric comprises an oxide of silicon.
Claim 7
Dependent Claim
29 words
The method of claim 5 wherein said additional dielectric is oxide formed by thermal oxidation of said silicon substrate through defects in said dielectric layer formed by said voltage.
Claim 8
Dependent Claim
19 words
The method of claim 1 wherein said dielectric layer comprises a silicon nitride layer formed on a silicon substrate.
Claim 9
Dependent Claim
14 words
The method of claim 7 wherein said additional dielectric comprises an oxide of silicon.
Claim 10
Dependent Claim
12 words
The method of claim 7 wherein said additional dielectric comprises silicon nitride.
Claim 11
Dependent Claim
27 words
The method of claim 7 wherein said dielectric layer comprises silicon nitride formed by direct nitridation, and said additional dielectric comprises silicon nitride formed by direct nitridation.
Claim 12
Independent Claim
163 words
The method of detecting and repairing latent defects in a dielectric layer on a semiconductor substrate which comprises: electrically stressing the dielectric layer by applying a voltage across said layer of a voltage value substantially that to which the region of said dielectric layer not containing latent defects is capable of being subjected without damage so as to damage weak areas of said dielectric layer; and forming additional dielectric on those regions of the semiconductor substrate beneath the weak areas of dielectric damaged by said voltage; wherein said voltage is applied to said dielectric layer on a semiconductor substrate by placing the substrate in an electrolyte bath, providing an electrode in the bath spaced from the substrate, said electrolyte being in intimate contact with said dielectric layer, and passing a voltage across said substrate to said electrode through said electrolyte to locally rupture the dielectric layer at said weak areas by exceeding the dielectric breakdown strength of said areas of the dielectric layer.
Claim 13
Independent Claim
163 words
The method of detecting and repairing latent defects in a dielectric layer on a semiconductor substrate which comprises: electrically stressing the dielectric layer by applying a voltage across said layer of a voltage value substantially that to which the region of said dielectric layer not containing latent defects is capable of being subjected without damage so as to damage weak areas of said dielectric layer; and forming additional dielectric on those regions of the semiconductor substrate beneath the weak areas of dielectric damaged by said voltage; wherein said voltage is applied to said dielectric layer on a semiconductor substrate by placing the substrate in an electrolyte bath, providing an electrode in the bath spaced from the substrate, said electrolyte being in intimate contact with said dielectric layer, and passing a voltage across said substrate to said electrode through said electrolyte to locally rupture the dielectric layer at said weak areas by exceeding the dielectric breakdown strength of said areas of the dielectric layer.
Claim 14
Dependent Claim
39 words
The method of claim 11 wherein said voltage is applied across the dielectric layer and electrode for a time sufficient to rupture time-dependent weak areas which may fail during the useful life of the product made from said substrate.
Claim 15
Dependent Claim
28 words
The method of claim 11 in which said additional dielectric is applied by subjecting said substrate to an oxygen atmosphere at elevated temperature to oxidize the silicon substrate.
Claim 16
Independent Claim
113 words
The method of detecting and repairing latent defects in a dielectric layer on a semiconductor substrate which comprises: electrically stressing the dielectric layer by applying a voltage across said layer of a voltage value substantially that to which the region of said dielectric layer not containing latent defects is capable of being subjected without damage so as to damage weak areas of said dielectric layer; and forming additional dielectric on those regions of the semiconductor substrate beneath the weak areas of dielectric damaged by said voltage; wherein said voltage is applied to said layer by an alternating current or pulsed direct current passing through a liquid electrolyte into which said substrate is placed.
Claim 17
Independent Claim
113 words
The method of detecting and repairing latent defects in a dielectric layer on a semiconductor substrate which comprises: electrically stressing the dielectric layer by applying a voltage across said layer of a voltage value substantially that to which the region of said dielectric layer not containing latent defects is capable of being subjected without damage so as to damage weak areas of said dielectric layer; and forming additional dielectric on those regions of the semiconductor substrate beneath the weak areas of dielectric damaged by said voltage; wherein said voltage is applied to said layer by an alternating current or pulsed direct current passing through a liquid electrolyte into which said substrate is placed.
References Cited (Backward Citations)
US3874915A
Cited
US4302725A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-12-12 | 1987-06-13 | 1987-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-12-12 | 1991-06-13 | 1991-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-12-12 | 1995-06-13 | 1995-12-13 | $7700.00 | Window Closed / Lapsed |