Resonant tunneling hot carrier transistor

Claim 2

A resonant tunneling hot carrier transistor fabricated on a substrate formed of a first compound semiconductor material, comprising: a) a first n-type collector layer provided on said substrate and formed of a second compound semiconductor material; b) a first collector barrier layer formed on said first n-type collector layer and of a third compound semiconductor material; c) a first n-type base layer formed on said first collector barrier layer and of a fourth compound semiconductor material; d) a first quantum well resonator formed on said first n-type base layer and having a first quantum well layer of a fifth compound semiconductor material sandwiched between first and second potential barrier layers of a sixth compound semiconductor material; e) a common n-type emitter layer formed on said quantum well resonator and of a seventh compound semiconductor material; f) a second quantum well resonator formed on said common n-type emitter layer and having a second quantum well layer of an eighth compound semiconductor material sandwiched between third and fourth potential barrier layers of a ninth compound semiconductor material; g) a second n-type base layer formed on said second quantum well resonator and of a tenth compound semiconductor material; h) a second collector barrier layer formed on said second n-type base layer and of an eleventh compound semiconductor material; and i) a second n-type collector layer formed on said second collector barrier layer and of a twelfth compound semiconductor material, wherein said first and second quantum well layers are different in thickness from one another.

Claim 3

A resonant tunneling hot carrier transistor as set forth in claim 1, in which said fifth and sixth compound semiconductor materials are intentionally undoped gallium arsenide and intentionally undoped Al x Ga 1-x As, respectively, wherein x is greater than zero and is equal to or less than unity.

Claim 4

A resonant tunneling hot carrier transistor as set forth in claim 2, in which said eighth and ninth compound semiconductor materials are intentionally undoped gallium arsenide and intentionally undoped Al x Gs 1-x As, respectively, wherein x is greater than zero and is equal to or less than unity.

Claim 5

A resonant tunneling hot carrier transistor as set forth in claim 3, in which said substrate is formed of gallium arsenide.

Claim 6

A resonant tunneling hot carrier transistor as set forth in claim 1, in which said first and second n-type base layers are coupled to one another for providing an input node, said common n-type emitter layer being coupled to a constant voltage source, said first and second n-type collector layers providing first and second output nodes.

Claim 7

A resonant tunneling hot carrier transistor fabricated on a substrate formed of a first compound semiconductor material, comprising: a) a first n-type collector layer provided on said substrate and formed of a second compound semiconductor material; b) a first collector barrier layer formed on said first n-type collector layer and of a third compound semiconductor material; c) a first n-type base layer formed on said first collector barrier layer and of a fourth compound semiconductor material; d) a first quantum well resonator formed on said first n-type base layer and having a first quantum well layer of a fifth compound semiconductor material sandwiched between first and second potential barrier layers of an sixth compound semiconductor material; e) a common n-type emitter layer formed on said first quantum well resonator and of a seventh compound semiconductor material; f) a second quantum well resonator formed on said common n-type emitter layer and having a second quantum well layer of a eighth compound semiconductor material sandwiched between third and fourth potential barrier layers of a ninth compound semiconductor material; g) a second n-type base layer formed on said second quantum well resonator and of a tenth compound semiconductor material; h) a second collector barrier layer formed on said second n-type base layer and of a eleventh compound semiconductor material and i) a second n-type collector layer formed on said second collector barrier layer and of a twelfth compound semiconductor material, wherein said fifth and eighth compound semiconductor materials are different in electron affinity from one another.

Claim 8

A resonant tunneling hot carrier transistor fabricated on a substrate formed of a first compound semiconductor material, comprising: a) a first n-type collector layer provided on said substrate and formed of a second compound semiconductor material; b) a first collector barrier layer formed on said first n-type collector layer and of a third compound semiconductor material; c) a first n-type base layer formed on said first collector barrier layer and of a fourth compound semiconductor material; d) a first quantum well resonator formed on said first n-type base layer and having a first quantum well layer of a fifth compound semiconductor material sandwiched between first and second potential barrier layers of an sixth compound semiconductor material; e) a common n-type emitter layer formed on said first quantum well resonator and of a seventh compound semiconductor material; f) a second quantum well resonator formed on said common n-type emitter layer and having a second quantum well layer of a eighth compound semiconductor material sandwiched between third and fourth potential barrier layers of a ninth compound semiconductor material; g) a second n-type base layer formed on said second quantum well resonator and of a tenth compound semiconductor material; h) a second collector barrier layer formed on said second n-type base layer and of a eleventh compound semiconductor material and i) a second n-type collector layer formed on said second collector barrier layer and of a twelfth compound semiconductor material, wherein said fifth and eighth compound semiconductor materials are different in electron affinity from one another.

Claim 9

A resonant tunneling hot carrier transistor as set forth in claim 6, in which said fifth and sixth compound semiconductor materials are intentionally undoped gallium arsenide and intentionally undoped Al x Ga 1-x As, respectively, wherein x is greater than zero and is equal to or less than unity.

Claim 10

A resonant tunneling hot carrier transistor as set forth in claim 7, in which said eighth and ninth compound semiconductor materials are intentionally undoped indium gallium arsenide and intentionally undoped Al x Ga 1-x As, respectively, wherein x is greater than zero and is equal to or less than unity.

Claim 11

A resonant tunneling hot carrier transistor as set forth in claim 8, in which said first and second quantum well layers are approximately equal in thickness to one another.

Claim 12

A resonant tunneling hot carrier transistor as set forth in claim 8, in which said indium gallium arsenide is represented by the molecular formula of In 0 .1 Ga 0 .9 As.

Claim 13

A resonant tunneling hot carrier transistor as set forth in claim 8, in which said substrate is formed of gallium arsenide.

Claim 14

A resonant tunneling hot carrier transistor as set forth in claim 6, in which said first and second n-type base layers are coupled to one another for providing an input node, said common n-type emitter layer being coupled to a constant voltage source, said first and second n-type collector layers providing first and second output nodes.