US5136978A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Heat pipe susceptor for epitaxy
Assignee: United States Department of the Air Force
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Filing: 1989-10-30
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Granted: 1992-08-11
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Expires: 2009-10-30
Abstract
Abstract The present invention is a heat pipe susceptor for use in a vapor deposition system. The multi-layered refractory material susceptor provides a highly uniform heated surface upon which wafers are placed for heating by a radio frequency (RF) source. Because of the highly uniform surface temperature, susceptors are able to hold a plurality of inch sized diameter wafers and the shape of the surfaces can be designed as the need arises. A cylindrically shaped top and a multi-faced frustum shaped top are examples.
Inventors
- 👤 Brian S. Ahern
- 👤 David W. Weyburne
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:24
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/12; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C30B25/10
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
113 words
In an improved chemical vapor deposition system wherein the improvement comprises a radio frequency (RF) heating source and a heat pipe susceptor for holding a semiconductor substrate, said heating source being positioned externally from said heat pipe susceptor, said heat pipe susceptor having at least one surface for holding a substrate directly thereon, said surface having an area sufficient to hold at least one substrate directly thereon for uniform heating, said RF heating source vaporizing a fluid for providing heat distribution within said heat pipe susceptor to provide an isothermal surface for holding the semiconductor substrate, said heat pipe susceptor being operable in a temperature range from 400° C. to about 1500° C.
Claim 2
Dependent Claim
113 words
In an improved chemical vapor deposition system wherein the improvement comprises a radio frequency (RF) heating source and a heat pipe susceptor for holding a semiconductor substrate, said heating source being positioned externally from said heat pipe susceptor, said heat pipe susceptor having at least one surface for holding a substrate directly thereon, said surface having an area sufficient to hold at least one substrate directly thereon for uniform heating, said RF heating source vaporizing a fluid for providing heat distribution within said heat pipe susceptor to provide an isothermal surface for holding the semiconductor substrate, said heat pipe susceptor being operable in a temperature range from 400° C. to about 1500° C.
Claim 3
Dependent Claim
42 words
In an improved vapor deposition system as defined in claim 1 wherein said heat pipe susceptor has a cylindrical top and a cylindrical base, said base being an integral part of said top and having a diameter substantially less than the top.
Claim 4
Dependent Claim
41 words
In an improved chemical vapor deposition system as defined in claim 1 wherein said heat pipe susceptor has a frustum shaped top with a plurality of inwardly angled faces thereon for holding substrates and an integral base attached to said top.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-11 | 1996-02-10 | 1996-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-11 | 2000-02-10 | 2000-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-11 | 2004-02-10 | 2004-08-11 | $7700.00 | Window Closed / Lapsed |