Semiconductor substrate heater and reactor process and apparatus

Claim 3

An apparatus for heating semiconductor substrates, as defined in claim 1, wherein said heat transfer means comprises essentially indium.

Claim 4

An apparatus for heating semiconductor substrates, as defined in claim 1, wherein said heat transfer means comprises essentially bismuth.

Claim 5

An apparatus for heating semiconductor substrates, as defined in claim 1, wherein said heat transfer means comprises essentially a eutectic of indium and bismuth.

Claim 6

An apparatus for heating semiconductor substrates, as defined in claim 1, wherein said heat transfer means has a melting point below 350° C. and a boiling point above 1000° C.

Claim 7

An apparatus for heating semiconductor substrates, as defined in claim 1, wherein said container surfaces are solid silicon carbide.

Claim 8

An apparatus for heating semiconductor substrates, as defined in claim 1, wherein said heating container flat wall is substantially vertical and said support means is constructed for supporting at least one substrate in a substantially vertical orientation.

Claim 9

An apparatus for heating semiconductor substrates, as defined in claim 7, including at least one gas port located on the external surface of said container at said substrate heating location and communicating with a gas source and means for expelling a process gas out of said port for pushing the substrate from said heating location.

Claim 10

An apparatus for heating semiconductor substrates, as defined in claim 1, wherein said heating means includes at least one resistance heat element located within and in direct contact with said heat transfer means.

Claim 11

An apparatus for heating semiconductor substrates, as defined in claim 1, wherein said heating means includes radiant heating means.

Claim 12

An apparatus for heating semiconductor substrates, as defined in claim 9, wherein said element is sheathed in dialectric.

Claim 13

A reaction apparatus for conducting treatment of thin film materials onto semiconductor substrates, said apparatus comprising: a reaction chamber; a substrate supporting and heating assembly in said chamber comprising: a heating container composed of thermally conductive material and having a flat wall for heating of semiconductor substrates, support means for supporting at least one semiconductor substrate against the external surface of said wall at a substrate heating location, heat transfer means comprising a low melting point, high boiling point metal contained within said container at least to the level of the top of the substrate heating location and in contact with said wall, and heating means for heating said heat transfer means; and transport means for transporting reactant materials into and out of said chamber whereby heat is transferred from said heating means through said metal to said container wall to heat said external surfaces of said container wall to a substantially uniform temperature across said substrate heating location for uniformly heating a substrate during reaction with reactant materials.

Claim 14

A reaction apparatus for conducting treatment of thin film materials onto semiconductor substrates, said apparatus comprising: a reaction chamber; a substrate supporting and heating assembly in said chamber comprising: a heating container composed of thermally conductive material and having a flat wall for heating of semiconductor substrates, support means for supporting at least one semiconductor substrate against the external surface of said wall at a substrate heating location, heat transfer means comprising a low melting point, high boiling point metal contained within said container at least to the level of the top of the substrate heating location and in contact with said wall, and heating means for heating said heat transfer means; and transport means for transporting reactant materials into and out of said chamber whereby heat is transferred from said heating means through said metal to said container wall to heat said external surfaces of said container wall to a substantially uniform temperature across said substrate heating location for uniformly heating a substrate during reaction with reactant materials.

Claim 15

The apparatus of claim 12, wherein said heat transfer means comprises essentially indium.

Claim 16

The apparatus of claim 12, wherein said heat transfer means comprises essentially bismuth.

Claim 17

The apparatus of claim 12, wherein in said heat transfer means comprises essentially a eutectic of indium and bismuth.

Claim 18

The apparatus of claim 12, wherein said heat transfer means has a melting point below 350° C. and a boiling point above 1000° C.

Claim 19

Apparatus for heating semiconductor substrates comprising a heating container having at least one thermally conductive wall member adapted to support and to conduct heat uniformly to a semiconductor substrate at a substrate heating location on the external surface of said wall member; a low melting point, high boiling point metal in contact with the entire area of the internal wall surface of said wall member corresponding to the normally projected area of said substrate heating location onto said internal surface; and means for heating said metal whereby heat is transferred from said heating means to said wall member and heats said external surface of said wall member to a substantially uniform temperature across said substrate heating location.

Claim 20

Apparatus for heating semiconductor substrates comprising a heating container having at least one thermally conductive wall member adapted to support and to conduct heat uniformly to a semiconductor substrate at a substrate heating location on the external surface of said wall member; a low melting point, high boiling point metal in contact with the entire area of the internal wall surface of said wall member corresponding to the normally projected area of said substrate heating location onto said internal surface; and means for heating said metal whereby heat is transferred from said heating means to said wall member and heats said external surface of said wall member to a substantially uniform temperature across said substrate heating location.

Claim 21

The apparatus of claim 17 wherein said metal has a melting point below 350° and a boiling point above 1000° C.

Claim 22

The apparatus of claim 17 wherein said metal is essentially indium.

Claim 23

The apparatus of claim 17 wherein said metal is essentially bismuth.

Claim 24

The apparatus of claim 17 wherein said metal is an eutectic of indium and bismuth.

Claim 25

Semiconductor wafer processing apparatus comprising, in combination, a processing housing have a substantially horizontal axis, a heat container having at least one thermally conductive wall member adapted to support a semiconductor substrate substantially vertically at a substrate heating position on the external surface of said wall member along said housing horizontal axis, a low melting point, high boiling point metal in contact with the entire area of the internal wall surface of said wall member corresponding to the normally projected area of said substrate heating locaion onto said internal surface, means for heating said metal whereby heat is transferred from said heating means to said wall member and heats said external surface of said wall member to substantially uniform temperature across said substrate heating location, a first housing member centered on said horizontal axis surrounding said substrate heating location, means for introducing and directing a treatment medium into said first housing member in a direction substantially parallel to said horizontal axis and toward said substrate heating location, said first housing member comprising a first inner cylindrical wall portion and a second outer cylindrical wall portion, said wall portions being coaxial and defining an inner cylindrical chamber for directing the treatment medium toward said substrate heating location and an outer annular chamber for directing the treatment medium away from said substrate heating location.

Claim 26

Semiconductor wafer processing apparatus comprising, in combination, a processing housing have a substantially horizontal axis, a heat container having at least one thermally conductive wall member adapted to support a semiconductor substrate substantially vertically at a substrate heating position on the external surface of said wall member along said housing horizontal axis, a low melting point, high boiling point metal in contact with the entire area of the internal wall surface of said wall member corresponding to the normally projected area of said substrate heating locaion onto said internal surface, means for heating said metal whereby heat is transferred from said heating means to said wall member and heats said external surface of said wall member to substantially uniform temperature across said substrate heating location, a first housing member centered on said horizontal axis surrounding said substrate heating location, means for introducing and directing a treatment medium into said first housing member in a direction substantially parallel to said horizontal axis and toward said substrate heating location, said first housing member comprising a first inner cylindrical wall portion and a second outer cylindrical wall portion, said wall portions being coaxial and defining an inner cylindrical chamber for directing the treatment medium toward said substrate heating location and an outer annular chamber for directing the treatment medium away from said substrate heating location.

Claim 27

The apparatus of claim 22 wherein said heating container includes a pair of parallel spaced apart wall members for supporting at least a pair of semiconductor substrates at substrate heating locations on the external surfaces with the free faces of the substrates facing in opposite directions along said housing horizontal axis, a second housing member centered on said horizontal axis on the other side of said heating container from said first housing, said second housing member comprising a second housing first inner cylindrical wall portion and a second housing second outer cylindrical wall portion, said housing wall portions being coaxial and defining a second housing inner cylindrical chamber for directing the treatment medium toward said second housing substrate heating location and a second housing outer annular chamber for directing the treatment medium away from said second housing substrate heating location and means for introducing and directing a treatment medium into said second housing member in a direction substantially parallel to said horizontal axis and toward said second housing substrate heating location.

Claim 28

The apparatus of claim 22 wherein said metal has a melting point below 350° and a boiling point above 1000° C.

Claim 29

The apparatus of claim 22 wherein said metal is essentially indium.

Claim 30

The apparatus of claim 22 wherein said metal is essentially bismuth.

Claim 31

The apparatus of claim 22 wherein said metal is an eutectic of indium and bismuth.