CVD reactor and gas injection system

Claim 1

A system for forming a film of substantially uniform thickness on a wafer without edge effects by chemical vapor deposition comprising: a cylindrical reactor chamber having a base and a top portion, wherein said base is inclined at a selected angle relative to the vertical; a circular wall connecting said base and said top portion; a heater platform forming a portion of said base and having a recess for supporting a semiconductor wafer so that said wafer is disposed substantially parallel to said base; means for introducing one or more gases into said reactor chamber; means for directing and deflecting said gases toward said circular wall so that said gases are uniformly mixed and are caused to flow radially inward of said reactor chamber; means for providing an exit for said gases; and a plate having a configured nonplanar surface in juxtaposition with said recess of said heater platform, said plate being configured to establish specified distances between each point of said nonplanar surface and opposing points on the surface of a wafer disposed in said heater platform recess, so that a predetermined thickness profile of a deposited film is produced on said wafer surface without deleterious edge effects.

Claim 2

A system for forming a film of substantially uniform thickness on a wafer without edge effects by chemical vapor deposition comprising: a cylindrical reactor chamber having a base and a top portion, wherein said base is inclined at a selected angle relative to the vertical; a circular wall connecting said base and said top portion; a heater platform forming a portion of said base and having a recess for supporting a semiconductor wafer so that said wafer is disposed substantially parallel to said base; means for introducing one or more gases into said reactor chamber; means for directing and deflecting said gases toward said circular wall so that said gases are uniformly mixed and are caused to flow radially inward of said reactor chamber; means for providing an exit for said gases; and a plate having a configured nonplanar surface in juxtaposition with said recess of said heater platform, said plate being configured to establish specified distances between each point of said nonplanar surface and opposing points on the surface of a wafer disposed in said heater platform recess, so that a predetermined thickness profile of a deposited film is produced on said wafer surface without deleterious edge effects.

Claim 4

A system for chemical vapor desposition of a film of uniform thickness on a surface of a substrate comprising: a cylindrical reactor chamber having a base; a heater platform having a central recessed well in which said substrate is positioned, the nominal thickness of said substrate being no greater than the depth of said well; an element having a nonplanar surface with a predetermined configuration, said nonplanar configured surface facing said recessed well, said element being contoured in those portions of its nonplanar surface opposite to the exposed surface of said substrate; a cylindrical wall joining said base and said element; and means for injecting one or more gases into said reactor chamber, whereby the thickness profile of said deposited film on the surface of said substrate is effectively controlled in accordance with the configured nonplanar element.

Claim 5

A system for chemical vapor desposition of a film of uniform thickness on a surface of a substrate comprising: a cylindrical reactor chamber having a base; a heater platform having a central recessed well in which said substrate is positioned, the nominal thickness of said substrate being no greater than the depth of said well; an element having a nonplanar surface with a predetermined configuration, said nonplanar configured surface facing said recessed well, said element being contoured in those portions of its nonplanar surface opposite to the exposed surface of said substrate; a cylindrical wall joining said base and said element; and means for injecting one or more gases into said reactor chamber, whereby the thickness profile of said deposited film on the surface of said substrate is effectively controlled in accordance with the configured nonplanar element.