Patent US5135878A successfully refreshed from Google Patents.
US5135878A
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US
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Schottky diode
Assignee: Solid State Devices Inc
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Filing: 1990-08-28
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Granted: 1992-08-04
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Expires: 2010-08-28
Abstract
Abstract A Schottky diode has a metal lead electrically connected to the Schottky contact layer wherein the metal lead is metallurgically bonded to the diode for increased reliability, the diode having a Ta--Si--N barrier layer.
Inventors
- 👤 Meir Bartur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 09:50
CPC Classifications
H; H10; H10W; H10W72/00; H10D; H10D64/00; H10D64/60; H10D64/64; H10D8/00; H10D8/01; H10D8/051; H10D8/60; H10W20/00; H10W20/40; H10W90/00; H10W72/071; H10W72/073; H10W72/07351; H10W72/07352; H10W72/30; H10W72/321
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
72 words
A method for fabricating a leaded Schottky barrier diode, comprising the steps of: forming a Schottky barrier diode having a diffusion barrier layer of tantalum-silicon-nitride; forming a metallization layer disposed over the diffusion barrier layer; placing a metal lead in proximity to the metallization layer; and heating the area in proximity to the metallization layer and metal lead to a temperature such that the metal lead metallurgically bonds to the metallization layer.
Claim 2
Independent Claim
72 words
A method for fabricating a leaded Schottky barrier diode, comprising the steps of: forming a Schottky barrier diode having a diffusion barrier layer of tantalum-silicon-nitride; forming a metallization layer disposed over the diffusion barrier layer; placing a metal lead in proximity to the metallization layer; and heating the area in proximity to the metallization layer and metal lead to a temperature such that the metal lead metallurgically bonds to the metallization layer.
Claim 3
Independent Claim
77 words
A method for fabricating an axially leaded Schottky barrier diode, comprising the steps of: forming a diffusion barrier layer of tantalum-silicon-nitride disposed over a first side of a silicon substrate; forming a metallization layer disposed over the diffusion barrier layer; placing a metal lead in proximity to the metallization layer; and heating the area in proximity to the metallization layer and metal lead to a temperature such that the metal lea metallurgically bonds to the metallization layer.
Claim 4
Independent Claim
77 words
A method for fabricating an axially leaded Schottky barrier diode, comprising the steps of: forming a diffusion barrier layer of tantalum-silicon-nitride disposed over a first side of a silicon substrate; forming a metallization layer disposed over the diffusion barrier layer; placing a metal lead in proximity to the metallization layer; and heating the area in proximity to the metallization layer and metal lead to a temperature such that the metal lea metallurgically bonds to the metallization layer.
Claim 5
Dependent Claim
24 words
The method of claim 2 wherein the metallization layer is heated to a temperature in excess of the melting point of the metallization layer.
Claim 6
Dependent Claim
16 words
The method of claim 2 wherein the heating temperature is in excess of 400 degrees C.
Claim 7
Dependent Claim
16 words
The method of claim 2 wherein the heating temperature is in excess of 600 degrees C.
Claim 8
Dependent Claim
37 words
The method of claim 2 wherein the metallization layer and the metal lead are formed of two different metals and the metallization layer and the metal lead are heated above the eutectic temperature of the two metals.
Claim 9
Dependent Claim
14 words
The method of claim 6 wherein the two different metals are silver and aluminum.
Claim 10
Dependent Claim
65 words
The method of claim 2 further comprising the steps of: forming a second metallization layer disposed over a second side of the substrate; placing a second metal lead in proximity to the second metallization layer; and heating the area in proximity to the second metallization layer and metal lead to a temperature such that the second metal lead metallurgically bonds to the second metallization layer.
Claim 11
Dependent Claim
48 words
The method of claim 8 further comprising the step of forming a second barrier layer over the second side of the substrate prior to forming the second metallization layer wherein the second barrier layer is interposed between the second side of the substrate and the second metallization layer.
Claim 12
Independent Claim
207 words
A method for fabricating an axially leaded Schottky barrier device, comprising the steps of: (a) forming a diode by: forming a diffusion barrier layer disposed over a first side of a silicon substrate; forming a top metallization layer disposed over the diffusion barrier layer; and forming a bottom metallization layer disposed over a bottom side of the substrate; repeating step (a) to form a plurality of diodes; stacking the diodes formed above in step (a) so that the bottom metallization of each diode having an underlying diode of the stack abuts the top metallization layer of the underlying diode; heating the stack to a temperature such that abutting top and bottom metallization layers of adjacent diodes of the stack metallurgically bond together; placing a top metal lead in proximity to the top metallization layer of the top diode of the stack; placing a bottom metal lead in proximity to the bottom metallization layer of the bottom diode of the stack; and heating the areas in proximity to the top and bottom leads to a temperature such that the top metal lead metallurgically bonds to the top metallization layer and the bottom metal lead metallurgically bonds to the bottom metallization layer of the top and bottom diodes, respectively.
Claim 13
Independent Claim
207 words
A method for fabricating an axially leaded Schottky barrier device, comprising the steps of: (a) forming a diode by: forming a diffusion barrier layer disposed over a first side of a silicon substrate; forming a top metallization layer disposed over the diffusion barrier layer; and forming a bottom metallization layer disposed over a bottom side of the substrate; repeating step (a) to form a plurality of diodes; stacking the diodes formed above in step (a) so that the bottom metallization of each diode having an underlying diode of the stack abuts the top metallization layer of the underlying diode; heating the stack to a temperature such that abutting top and bottom metallization layers of adjacent diodes of the stack metallurgically bond together; placing a top metal lead in proximity to the top metallization layer of the top diode of the stack; placing a bottom metal lead in proximity to the bottom metallization layer of the bottom diode of the stack; and heating the areas in proximity to the top and bottom leads to a temperature such that the top metal lead metallurgically bonds to the top metallization layer and the bottom metal lead metallurgically bonds to the bottom metallization layer of the top and bottom diodes, respectively.
Claim 14
Dependent Claim
48 words
The method of claim 10 further comprising the step of forming a second barrier layer over the second side of the substrate prior to forming the second metallization layer wherein the second barrier layer is interposed between the second side of the substrate and the second metallization layer.
Claim 15
Dependent Claim
24 words
The method of claim 10 wherein the metallization layers are heated to a temperature in excess of the melting point of the metallization layers.
Claim 16
Dependent Claim
16 words
The method of claim 10 wherein the heating temperature is in excess of 400 degrees C.
Claim 17
Dependent Claim
16 words
The method of claim 10 wherein the heating temperature is in excess of 600 degrees C.
Claim 18
Dependent Claim
35 words
The method of claim 10 wherein the top and bottom metallization layers are formed of two different metals and the top and bottom metallization layers are heated above the eutectic temperature of the two metals.
Claim 19
Dependent Claim
14 words
The method of claim 14 wherein the two different metals are silver and aluminum.
Claim 20
Independent Claim
194 words
A method for fabricating an axially leaded Schottky barrier device, comprising the steps of: (a) forming a diode by: forming a diffusion barrier layer disposed over a first side of a silicon substrate; forming a top metallization layer disposed over the diffusion barrier layer; and forming a bottom metallization layer disposed over a bottom side of the substrate; repeating step (a) to form a plurality of diodes; stacking the diodes formed above in step (a) so that the bottom metallization of each diode having an underlying diode of the stack abuts the top metallization layer of the underlying diode; placing a top metal lead in proximity to the top metallization layer of the top diode of the stack; placing a bottom metal lead in proximity to the bottom metallization layer of the bottom diode of the stack; and heating the stack to a temperature such that abutting top and bottom metallization layers of adjacent diodes of the stack metallurgically bond together and such that the top metal lead metallurgically bonds to the top metallization layer and the bottom metal lead metallurgically bonds to the bottom metallization layer of the top and bottom diodes, respectively.
Claim 21
Independent Claim
194 words
A method for fabricating an axially leaded Schottky barrier device, comprising the steps of: (a) forming a diode by: forming a diffusion barrier layer disposed over a first side of a silicon substrate; forming a top metallization layer disposed over the diffusion barrier layer; and forming a bottom metallization layer disposed over a bottom side of the substrate; repeating step (a) to form a plurality of diodes; stacking the diodes formed above in step (a) so that the bottom metallization of each diode having an underlying diode of the stack abuts the top metallization layer of the underlying diode; placing a top metal lead in proximity to the top metallization layer of the top diode of the stack; placing a bottom metal lead in proximity to the bottom metallization layer of the bottom diode of the stack; and heating the stack to a temperature such that abutting top and bottom metallization layers of adjacent diodes of the stack metallurgically bond together and such that the top metal lead metallurgically bonds to the top metallization layer and the bottom metal lead metallurgically bonds to the bottom metallization layer of the top and bottom diodes, respectively.
Claim 22
Dependent Claim
48 words
The method of claim 17 further comprising the step of forming a second barrier layer over the second side of the substrate prior to forming the second metallization layer wherein the second barrier layer is interposed between the second side of the substrate and the second metallization layer.
Claim 23
Dependent Claim
24 words
The method of claim 17 wherein the metallization layers are heated to a temperature in excess of the melting point of the metallization layers.
Claim 24
Dependent Claim
16 words
The method of claim 17 wherein the heating temperature is in excess of 400 degrees C.
Claim 25
Dependent Claim
16 words
The method of claim 17 wherein the heating temperature is in excess of 600 degrees C.
Claim 26
Dependent Claim
35 words
The method of claim 17 wherein the top and bottom metallization layers are formed of two different metals and the top and bottom metallization layers are heated above the eutectic temperature of the two metals.
Claim 27
Dependent Claim
14 words
The method of claim 17 wherein the two different metals are silver and aluminum.
Claim 28
Dependent Claim
60 words
The method of claim 17 further comprising the step of placing a glass sleeve around the stack of diodes and the ends of the leads before the stack and the leads are heated; wherein the metallurgically bonding heating step further includes simultaneous heating of the glass sleeve to hermetically seal the stack of diodes and the ends of the leads.
Claim 29
Independent Claim
14 words
The method of claims 10 or 17 wherein the diffusion barrier layer comprises tantalum-silicon-nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-04 | 1996-02-03 | 1996-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-04 | 2000-02-03 | 2000-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-04 | 2004-02-03 | 2004-08-04 | $7700.00 | Window Closed / Lapsed |