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US5135877A
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Method of making a light-emitting diode with anti-reflection layer optimization
Assignee: Eastman Kodak Co
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Filing: 1991-07-19
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Granted: 1992-08-04
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Expires: 2011-07-19
Abstract
Abstract Improved light output from LED's or the like are obtained by modifying the combined thickness dimensions of a transmissive diffusion mask layer and anti-reflection coating layer at the periphery of the window forming the light-emitting region.
Inventors
- 👤 Christopher J. Albergo
- 👤 Robert J. Maryjanowski
- 👤 Mary L. Ott
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 07:33
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/84; H10H20/81; H10H20/822; H10H20/824; H10H29/00; H10H29/10; H10H29/14
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
152 words
In a method of forming a light-emitting semiconductor device, the steps including providing a substrate of semiconductor material; forming a first layer upon said substrate of one type of material suited for forming a p-n junction; depositing a light transmissive dielectric mask layer over said first layer; etching a window in said dielectric layer; diffusing a substance through said window to form a diffused region in said first layer of a second type of material cooperating with the material of the first type to form a p-n junction; covering said window and portions of said mask adjacent said window with an anti-reflection layer and the improvement which comprises: wherein in the step of depositing the mask layer the thickness thereof is adjusted so that the combined thickness of the mask layer and anti-reflection layer are such as to provide a minimum of internal reflection of light emitted from beneath said mask layer.
Claim 2
Dependent Claim
152 words
In a method of forming a light-emitting semiconductor device, the steps including providing a substrate of semiconductor material; forming a first layer upon said substrate of one type of material suited for forming a p-n junction; depositing a light transmissive dielectric mask layer over said first layer; etching a window in said dielectric layer; diffusing a substance through said window to form a diffused region in said first layer of a second type of material cooperating with the material of the first type to form a p-n junction; covering said window and portions of said mask adjacent said window with an anti-reflection layer and the improvement which comprises: wherein in the step of depositing the mask layer the thickness thereof is adjusted so that the combined thickness of the mask layer and anti-reflection layer are such as to provide a minimum of internal reflection of light emitted from beneath said mask layer.
Claim 3
Dependent Claim
22 words
The method of claim 1 and wherein in the step of covering said window, said window is covered with a dielectric material.
Claim 4
Dependent Claim
46 words
The method of claim 2 and wherein the mask layer and anti-reflection layer are each formed of silicon nitride and wherein the thickness of the anti-reflection layer overlying the mask area is about 2700 Å and the thickness of the mask layer is about 1800 Å.
Claim 5
Dependent Claim
46 words
The method of claim 1 and wherein the mask layer and anti-reflection layer are each formed of silicon nitride and wherein the thickness of the anti-reflection layer overlying the mask area is about 2700 Å and the thickness of the mask layer is about 1800 Å.
Claim 6
Dependent Claim
16 words
The method of claim 4 and wherein the anti-reflection layer covering said window is a dielectric.
Claim 7
Dependent Claim
30 words
The method of claim 1 and wherein the thickness of the anti-reflection layer is such as to provide a minimum of internal reflection of light emitted from beneath said window.
Claim 8
Dependent Claim
138 words
In a method of forming a light-emitting semiconductor device, the steps including providing a substrate of semiconductor material and forming a p-n junction in said material; depositing a light transmissive dielectric mask layer upon said substrate and forming a light-transmissive window in said dielectric layer; covering said window and portions of said mask adjacent said window with an anti-reflection layer and the improvement which comprises: wherein in the step of depositing the mask layer the thickness thereof is adjusted so that the combined thickness of the mask layer and anti-reflection layer are such as to provide a minimum of internal reflection of light emitted from beneath said mask layer at areas adjacent said window and the thickness of the anti-reflection layer is such as to provide a minimum of internal reflection of light emitted from beneath said window.
Claim 9
Dependent Claim
138 words
In a method of forming a light-emitting semiconductor device, the steps including providing a substrate of semiconductor material and forming a p-n junction in said material; depositing a light transmissive dielectric mask layer upon said substrate and forming a light-transmissive window in said dielectric layer; covering said window and portions of said mask adjacent said window with an anti-reflection layer and the improvement which comprises: wherein in the step of depositing the mask layer the thickness thereof is adjusted so that the combined thickness of the mask layer and anti-reflection layer are such as to provide a minimum of internal reflection of light emitted from beneath said mask layer at areas adjacent said window and the thickness of the anti-reflection layer is such as to provide a minimum of internal reflection of light emitted from beneath said window.
Claim 10
Dependent Claim
22 words
The method of claim 7 and wherein in the step of covering said window, said window is covered with a dielectric material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-04 | 1996-02-03 | 1996-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-04 | 2000-02-03 | 2000-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-04 | 2004-02-03 | 2004-08-04 | $7700.00 | Window Closed / Lapsed |