Patent US5128273A successfully refreshed from Google Patents.
US5128273A
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US
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Method of making a dynamic random access memory cell with stacked capacitor
Assignee: Fujitsu Ltd
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Filing: 1990-06-12
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Granted: 1992-07-07
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Expires: 2010-06-12
Abstract
Abstract A DRAM device includes bit lines formed on an interlayer insulation film which covers gate electrodes on an insulation film on a semiconductor substrate. Each bit line is in contact with the corresponding source region formed in the substrate through an opening in the insulation films. Another insulation film is formed so as to cover the bit lines. A storage electrode is formed on the insulation film covering the bit line, and is in contact with a drain region in the substrate through another opening in the insulation films. The bit line has a vertical layer level lower than that of the storage electrode. The storage electrode is covered with a dielectric film, which is covered with an opposed electrode.
Inventors
- 👤 Taiji Ema
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:58
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/48; H10B12/482; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/31; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
158 words
A method for producing a dynamic random access memory device comprising the steps of: a) forming a gate electrode on a first insulation film formed on a semiconductor substrate and forming source and drain regions in the semiconductor substrate; b) forming a second insulation film so as to cover the gate electrode; c) forming a first opening in the first and second insulation films; d) forming a bit line in contact with the source region through the first opening and overlying the second insulation film; e) forming a third insulation film so as to cover the bit line; f) forming a second opening in the first, second and third insulation films; g) forming a storage electrode in direct contact with the drain region through the second opening and overlying the third insulation film; h) forming a dielectric film so as to surround the storage electrode; and i) forming an opposed electrode so as to cover the dielectric film.
Claim 2
Independent Claim
158 words
A method for producing a dynamic random access memory device comprising the steps of: a) forming a gate electrode on a first insulation film formed on a semiconductor substrate and forming source and drain regions in the semiconductor substrate; b) forming a second insulation film so as to cover the gate electrode; c) forming a first opening in the first and second insulation films; d) forming a bit line in contact with the source region through the first opening and overlying the second insulation film; e) forming a third insulation film so as to cover the bit line; f) forming a second opening in the first, second and third insulation films; g) forming a storage electrode in direct contact with the drain region through the second opening and overlying the third insulation film; h) forming a dielectric film so as to surround the storage electrode; and i) forming an opposed electrode so as to cover the dielectric film.
Claim 3
Dependent Claim
81 words
A method for producing a dynamic random access memory device as claimed in claim 10, wherein the step of forming the storage electrode comprises the steps of forming an insulation film on the third insulation film and forming a conductive film on the insulation film, and wherein the steps of forming the insulation film and forming the conductive film are repetitively carried out so as to form a stacked layer structure composed of a plurality of insulation films and conductive films.
Claim 4
Dependent Claim
51 words
A method for producing a dynamic random access memory device as claimed in claim 11, wherein the step of forming the storage electrode further comprises the steps of patterning the plurality of conductive and insulation films by an anisotropic etching process, and removing patterned insulation films by an isotropic etching process.
Claim 5
Dependent Claim
65 words
A method for producing a dynamic random access memory device as claimed in claim 10, further comprising the steps of forming a fourth insulation film so as to cover the gate electrode, and patterning the fourth insulation film by an anisotropic etching process so that a portion of the fourth insulation film around the gate electrode is left and functions as a side wall film.
Claim 6
Dependent Claim
65 words
A method for producing a dynamic random access memory device as claimed in claim 1, further comprising the steps of forming a fifth insulation film so as to cover the bit line, and patterning the fifth insulation film by an anisotropic etching process so that a portion of the fifth insulation film around the bit line is left and functions as a side wall film.
Claim 7
Independent Claim
212 words
A method for producing a dynamic random access memory device comprising the steps of: a) forming a gate electrode on a first insulation film formed on a semiconductor substrate and forming source and drain regions in the semiconductor substrate; b) forming a second insulation film so as to cover the gate electrode; c) forming a first opening in the first and second insulation films; d) forming a conductive film on the second insulation film; e) forming a third insulation film on the conductive film; f) patterning the conductive film and the third insulation film so as to shape a bit line on which the third insulation film remains; g) forming a fourth insulation film on the bit line and the second and third insulation films; h) forming a second opening in the first, second and fourth insulation films by a self-alignment process in which the bit line is used as a mask film so that the fourth insulation film remains surrounding a side wall of the bit line; i) forming a storage electrode in contact with the drain region and overlying the third and fourth insulation films; j) forming a dielectric film so as to surround the storage electrode; and k) forming an opposed electrode so as to cover the dielectric film.
Claim 8
Independent Claim
212 words
A method for producing a dynamic random access memory device comprising the steps of: a) forming a gate electrode on a first insulation film formed on a semiconductor substrate and forming source and drain regions in the semiconductor substrate; b) forming a second insulation film so as to cover the gate electrode; c) forming a first opening in the first and second insulation films; d) forming a conductive film on the second insulation film; e) forming a third insulation film on the conductive film; f) patterning the conductive film and the third insulation film so as to shape a bit line on which the third insulation film remains; g) forming a fourth insulation film on the bit line and the second and third insulation films; h) forming a second opening in the first, second and fourth insulation films by a self-alignment process in which the bit line is used as a mask film so that the fourth insulation film remains surrounding a side wall of the bit line; i) forming a storage electrode in contact with the drain region and overlying the third and fourth insulation films; j) forming a dielectric film so as to surround the storage electrode; and k) forming an opposed electrode so as to cover the dielectric film.
Claim 9
Independent Claim
232 words
A method for producing a dynamic random access memory device comprising the steps of: a) forming a gate electrode on a first insulation film formed on a semiconductor substrate and forming source and drain regions in the semiconductor substrate; b) forming a second insulation film so as to cover the gate electrode; c) forming a first opening in the first and second insulation films; d) forming a bit line in contact with the source region through the first opening and overlying the second insulation film; e) forming a third insulation film so as to cover the bit line; f) forming a second opening in the first, second and third insulation films; g) forming a storage electrode in contact with the drain region through the second opening and overlying the third insulation film, including the substeps of: i) forming a fourth insulation film on the third insulation film; ii) forming a conductive film on the fourth insulation film, a stacked layer structure including a plurality of insulation films and conductive films being formed by the repetition of said substeps i) and ii); iii) patterning the plurality of conductive and insulation films by an anisotropic etching process; and iv) removing the patterned insulation films by an isotropic etching process; h) forming a dielectric film so as to surround the storage electrode; and i) forming an opposed electrode so as to cover the dielectric film.
Claim 10
Independent Claim
232 words
A method for producing a dynamic random access memory device comprising the steps of: a) forming a gate electrode on a first insulation film formed on a semiconductor substrate and forming source and drain regions in the semiconductor substrate; b) forming a second insulation film so as to cover the gate electrode; c) forming a first opening in the first and second insulation films; d) forming a bit line in contact with the source region through the first opening and overlying the second insulation film; e) forming a third insulation film so as to cover the bit line; f) forming a second opening in the first, second and third insulation films; g) forming a storage electrode in contact with the drain region through the second opening and overlying the third insulation film, including the substeps of: i) forming a fourth insulation film on the third insulation film; ii) forming a conductive film on the fourth insulation film, a stacked layer structure including a plurality of insulation films and conductive films being formed by the repetition of said substeps i) and ii); iii) patterning the plurality of conductive and insulation films by an anisotropic etching process; and iv) removing the patterned insulation films by an isotropic etching process; h) forming a dielectric film so as to surround the storage electrode; and i) forming an opposed electrode so as to cover the dielectric film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-07-07 | 1996-01-06 | 1996-07-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-07-07 | 2000-01-06 | 2000-07-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-07-07 | 2004-01-06 | 2004-07-07 | $7700.00 | Window Closed / Lapsed |