Dynamic semiconductor memory with improved sense signal

Claim 2

A dynamic semiconductor memory comprising memory cells, each including a first bit line and a second bit line for inputting and outputting information, said first and second bit lines being complementary to each other, a storage capacitor means for storing information and a selecting means for selecting said storage capacitor means, one end of said storage capacitor means being connected to said second bit line and the other end of said storage capacitor means being connected through said selecting means to said first bit line, a sense amplifier means for amplifying a differential voltage outputted to said complementary first and second bit lines, a control means adapted to connect said sense amplifier means and said second bit line only during a period when said differential voltage is inputted to said sense amplifier means and to disconnect said second bit line from said sense amplifier means during an active period of said sense amplifier means, and a dummy storage capacitor with one end connected to said first bit line and the other end connected to a dummy control signal line.

Claim 3

The dynamic semiconductor memory of claim 1 wherein said second bit line is adapted to stay at a predetermined voltage independent of input or output information during an active period of said sense amplifier means.

Claim 4

The dynamic semiconductor memory of claim 1 wherein said second bit line is adapted to stay at a predetermined voltage independent of input or output information during a wait period and/or a period when information is being inputted to a specified memory cell.

Claim 5

The dynamic semiconductor memory of claim 1 wherein said control means includes a dummy storage capacitor adapted to take out said differential voltage, one end of said dummy storage capacitor being connected only to said first bit line and the other end of said dummy storage capacitor being connected to a terminal for inputting control signals.

Claim 6

A dynamic semiconductor memory comprising a plurality of memory cells, each including a first bit line and a second bit line for inputting and outputting information, said first and second bit lines being complementary to each other, a storage capacitor means for storing information and a selecting means for selecting said storage capacitor means, one end of said storage capacitor means being connected to said second bit line and the other end of said storage capacitor means being connected through said selecting means to said first bit line, said selecting means being formed by a MOSFET having a first diffusion region and a second diffusion region separate from each other on a semiconductor substrate surface and having a first wiring means as the gate electrode thereof, one end of said storage capacitor means being formed by a second wiring means and connected to said second diffusion region through a contact hole, the other end of said storage capacitor means being formed by a third wiring means, said second and third wiring means having a thin film region therebetween to form a desired storage capacitor, said first diffusion region and a fourth wiring means being connected through another contact hole, and said third and fourth wiring means being shared among said plurality of memory cells to form said complementary first and second bit lines, said first bit line being connected to one end of a dummy storage capacitor, the other end of said capacitor being connected to a dummy control signal line.

Claim 7

A dynamic semiconductor memory comprising a plurality of memory cells, each including a first bit line and a second bit line for inputting and outputting information, said first and second bit lines being complementary to each other, a storage capacitor means for storing information and a selecting means for selecting said storage capacitor means, one end of said storage capacitor means being connected to said second bit line and the other end of said storage capacitor means being connected through said selecting means to said first bit line, said selecting means being formed by a MOSFET having a first diffusion region and a second diffusion region separate from each other on a semiconductor substrate surface and having a first wiring means as the gate electrode thereof, one end of said storage capacitor means being formed by a second wiring means and connected to said second diffusion region through a contact hole, the other end of said storage capacitor means being formed by a third wiring means, said second and third wiring means having a thin film region therebetween to form a desired storage capacitor, said first diffusion region and a fourth wiring means being connected through another contact hole, and said third and fourth wiring means being shared among said plurality of memory cells to form said complementary first and second bit lines, said first bit line being connected to one end of a dummy storage capacitor, the other end of said capacitor being connected to a dummy control signal line.

Claim 8

A dynamic semiconductor memory comprising memory cells, each including a first bit line and a second bit line for inputting and outputting information, said first and second bit lines being complementary to each other, a storage capacitor means for storing information and a selecting means for selecting said storage capacity means, one end of said storage capacity means being connected to said second bit line and the other end of said storage capacitor means being connected through said selecting means to said first bit line, said first and second bit lines being formed on a semiconductor substrate in such a manner that there is, or is allowed to be a difference in floating capacitance between said first and second bit lines, said first bit line being connected to one end of a dummy storage capacitor, the other end of said capacitor being connected to a dummy control signal line.

Claim 9

A dynamic semiconductor memory comprising memory cells, each including a first bit line and a second bit line for inputting and outputting information, said first and second bit lines being complementary to each other, a storage capacitor means for storing information and a selecting means for selecting said storage capacity means, one end of said storage capacity means being connected to said second bit line and the other end of said storage capacitor means being connected through said selecting means to said first bit line, said first and second bit lines being formed on a semiconductor substrate in such a manner that there is, or is allowed to be a difference in floating capacitance between said first and second bit lines, said first bit line being connected to one end of a dummy storage capacitor, the other end of said capacitor being connected to a dummy control signal line.

Claim 10

The dynamic semiconductor memory of claim 6 wherein said first and second bit lines are of different materials and form a multi-layer structure.

Claim 11

A dynamic semiconductor memory comprising a plurality of bit line pairs, each bit line pair including a first bit line and a second bit line for inputting and outputting information, said first and second bit lines being complementary to each other, said first bit line being connected to one end of a dummy storage capacitor, the other end of said dummy storage capacitor being connected to a dummy control signal line, memory cells each corresponding to one of said bit line pairs, each memory cell including a storage capacitor means for storing information and a selecting means for selecting said storage capacitor means, one end of said storage capacitor means being connected to the second bit line of the corresponding one of said bit line pairs and the other end of said storage capacitor means being connected through said selecting means to the first bit line of said corresponding one of said bit line pairs, amplifier means connected individually to said bit line pairs for amplifying signals outputted to the corresponding one of said bit line pairs, and control means connected individually to said bit line pairs, said bit line pairs being sequentially arranged adjacent to one another defining two end positions, and a part or all of said control and amplifier means corresponding to said bit line pairs being disposed alternately on both of said two end positions of said bit line pairs.

Claim 12

A dynamic semiconductor memory comprising a plurality of bit line pairs, each bit line pair including a first bit line and a second bit line for inputting and outputting information, said first and second bit lines being complementary to each other, said first bit line being connected to one end of a dummy storage capacitor, the other end of said dummy storage capacitor being connected to a dummy control signal line, memory cells each corresponding to one of said bit line pairs, each memory cell including a storage capacitor means for storing information and a selecting means for selecting said storage capacitor means, one end of said storage capacitor means being connected to the second bit line of the corresponding one of said bit line pairs and the other end of said storage capacitor means being connected through said selecting means to the first bit line of said corresponding one of said bit line pairs, amplifier means connected individually to said bit line pairs for amplifying signals outputted to the corresponding one of said bit line pairs, and control means connected individually to said bit line pairs, said bit line pairs being sequentially arranged adjacent to one another defining two end positions, and a part or all of said control and amplifier means corresponding to said bit line pairs being disposed alternately on both of said two end positions of said bit line pairs.