Patent US5126283A successfully refreshed from Google Patents.
US5126283A
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US
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Process for the selective encapsulation of an electrically conductive structure in a semiconductor device
Assignee: NXP USA Inc
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Filing: 1990-05-21
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Granted: 1992-06-30
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Expires: 2010-05-21
Abstract
Abstract A process for fabricating an improved semiconductor device is disclosed wherein a protective layer of Al 2 O 3 is selectively formed to encapsulate a refractory-metal conductor. To form the Al 2 O 3 layer, first an Al/refractory-metal alloy is selectively formed on the surface of the refractory-metal conductor, then the Al/refractory-metal alloy is reacted with O 2 . The resulting Al 2 O 3 encapsulation layer acts as an O 2 diffusion barrier preventing the oxidation of the refractory-metal during subsequent process steps used to fabricate the semiconductor device. In addition, the Al 2 O 3 layer improves the mechanical compatibility of the refractory-metal conductor with other materials used to construct the semiconductor device, such as, for example, improving the adhesion of an overlying layer of passivation glass to the refractory-metal conductor.
Inventors
- 👤 Faivel Pintchovski
- 👤 John R. Yeargain
- 👤 Stanley M. Filipiak
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:29
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; H10P14/6322; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; H10P14/6938; H10P14/6939; H10P14/69391; Y; Y10; Y10S; Y10S438/00; Y10S438/911
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
114 words
A method for fabricating a semiconductor device comprising: providing a substrate having a device region thereon; forming a dielectric layer to overlie the substrate; forming a refractory-metal conductor on the device region having a horizontal surface and substantially vertical wall surfaces; forming a layer of Al overlying the refractory metal conductor and the dielectric layer; reacting Al and refractory metal to form an Al alloy layer; etching away unreacted Al from the surface of the substrate; and oxidizing the Al alloy layer to form an Al 2 O 3 layer overlying the refractory-metal conductor, wherein the Al 2 O 3 layer overlies only the horizontal and substantially vertical wall surfaces of the refractory-metal conductor.
Claim 2
Independent Claim
114 words
A method for fabricating a semiconductor device comprising: providing a substrate having a device region thereon; forming a dielectric layer to overlie the substrate; forming a refractory-metal conductor on the device region having a horizontal surface and substantially vertical wall surfaces; forming a layer of Al overlying the refractory metal conductor and the dielectric layer; reacting Al and refractory metal to form an Al alloy layer; etching away unreacted Al from the surface of the substrate; and oxidizing the Al alloy layer to form an Al 2 O 3 layer overlying the refractory-metal conductor, wherein the Al 2 O 3 layer overlies only the horizontal and substantially vertical wall surfaces of the refractory-metal conductor.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein the refractory-metal is selected from the group consisting of W, Mo, Cr, Co and Pt.
Claim 4
Dependent Claim
21 words
The method of claim 1 wherein the semiconductor device is one of a DRAM, SRAM, data processor device or Bi-CMOS device.
Claim 5
Independent Claim
118 words
A method for fabricating an MOS transistor gate comprising: providing a substrate having a device region thereon; forming a dielectric layer to overlie the substrate; forming a gate electrode on the device region wherein the gate electrode comprises, a polysilicon layer directly overlying the dielectric layer, a TiN layer overlying the polysilicon layer and a refractory-metal layer overlying the TiN layer; forming a layer of Al overlying the refractory gate electrode and the dielectric layer; reacting Al and refractory metal to form an Al alloy layer; etching away unreacted Al from the dielectric layer; and oxidizing the Al alloy layer to form an Al 2 O 3 layer solely overlying the exposed surface regions of the refractory-metal layer.
Claim 6
Independent Claim
118 words
A method for fabricating an MOS transistor gate comprising: providing a substrate having a device region thereon; forming a dielectric layer to overlie the substrate; forming a gate electrode on the device region wherein the gate electrode comprises, a polysilicon layer directly overlying the dielectric layer, a TiN layer overlying the polysilicon layer and a refractory-metal layer overlying the TiN layer; forming a layer of Al overlying the refractory gate electrode and the dielectric layer; reacting Al and refractory metal to form an Al alloy layer; etching away unreacted Al from the dielectric layer; and oxidizing the Al alloy layer to form an Al 2 O 3 layer solely overlying the exposed surface regions of the refractory-metal layer.
Claim 7
Independent Claim
104 words
A method for forming a local interconnect in a semiconductor device comprising: forming a refractory-metal lead on a semiconductor substrate having a plurality of conductive layers thereon, the refractory-metal lead providing an electrical conduit between the plurality of conductive layers; depositing a layer of Al to overly the refractory-metal lead and the semiconductor substrate; applying thermal energy to react the Al layer with the refractory-metal lead to form an Al/refractory-metal alloy on the surface of the refractory-metal lead; removing the unreacted Al from the semiconductor substrate; and oxidizing the Al/refractory-metal alloy to form a layer of Al 2 O 3 encapsulating the refractory-metal lead.
Claim 8
Independent Claim
104 words
A method for forming a local interconnect in a semiconductor device comprising: forming a refractory-metal lead on a semiconductor substrate having a plurality of conductive layers thereon, the refractory-metal lead providing an electrical conduit between the plurality of conductive layers; depositing a layer of Al to overly the refractory-metal lead and the semiconductor substrate; applying thermal energy to react the Al layer with the refractory-metal lead to form an Al/refractory-metal alloy on the surface of the refractory-metal lead; removing the unreacted Al from the semiconductor substrate; and oxidizing the Al/refractory-metal alloy to form a layer of Al 2 O 3 encapsulating the refractory-metal lead.
Claim 9
Dependent Claim
21 words
The method of claim 5 wherein the refractory-metal is selected from the group consisting of W, Mo, Cr, Co and Pt.
Claim 10
Independent Claim
72 words
A method for preventing the oxidation of a refractory-metal conductor in a semiconductor device comprising: forming a refractory-metal conductor on a semiconductor substrate; reacting the refractory-metal with Al to form an Al/refractory-metal alloy on the surface of the refractory-metal conductor; and oxidizing the Al/refractory-metal alloy to form a layer of Al 2 O 3 encapsulating the refractory-metal conductor wherein the Al 2 O 3 layer provides a barrier to oxygen diffusion therethrough.
Claim 11
Independent Claim
72 words
A method for preventing the oxidation of a refractory-metal conductor in a semiconductor device comprising: forming a refractory-metal conductor on a semiconductor substrate; reacting the refractory-metal with Al to form an Al/refractory-metal alloy on the surface of the refractory-metal conductor; and oxidizing the Al/refractory-metal alloy to form a layer of Al 2 O 3 encapsulating the refractory-metal conductor wherein the Al 2 O 3 layer provides a barrier to oxygen diffusion therethrough.
Claim 12
Dependent Claim
21 words
The method of claim 7 wherein the refractory-metal is selected from the group consisting of W, Mo, Cr, Co and Pt.
Claim 13
Dependent Claim
22 words
The method of claim 7 wherein the semiconductor device is one of a DRAM, SRAM, data processor, bi-polar device or Bi-CMOS device.
Claim 14
Independent Claim
144 words
A method for fabricating a low resistance electrical conductor in a semiconductor device comprising: providing a single crystal silicon substrate having a device region thereon; oxidizing the substrate to form a silicon dioxide dielectric layer thereon; depositing a layer of W onto the dielectric layer; forming a photoresist pattern on the layer of W etching the layer of W to form a W conductor over the device region of the substrate; removing the photoresist pattern; depositing a layer of Al onto the substrate; annealing the substrate to selectively form a layer of WAl 12 between the Al layer and the W conductor and to leave an unreacted portion of the Al layer; etching away the unreacted portion of the Al layer from the substrate; and oxidizing the WAl 12 layer to selectively form a layer of Al 2 O 3 encapsulating the W conductor.
Claim 15
Independent Claim
144 words
A method for fabricating a low resistance electrical conductor in a semiconductor device comprising: providing a single crystal silicon substrate having a device region thereon; oxidizing the substrate to form a silicon dioxide dielectric layer thereon; depositing a layer of W onto the dielectric layer; forming a photoresist pattern on the layer of W etching the layer of W to form a W conductor over the device region of the substrate; removing the photoresist pattern; depositing a layer of Al onto the substrate; annealing the substrate to selectively form a layer of WAl 12 between the Al layer and the W conductor and to leave an unreacted portion of the Al layer; etching away the unreacted portion of the Al layer from the substrate; and oxidizing the WAl 12 layer to selectively form a layer of Al 2 O 3 encapsulating the W conductor.
Claim 16
Dependent Claim
28 words
The method of claim 10 wherein the step of annealing the substrate to form the layer of WAl 12 is carried out by means of rapid thermal annealing.
Claim 17
Dependent Claim
27 words
The method of claim 10 wherein the step of oxidizing WAl 12 layer is carried out by means of rapid thermal annealing in an O 2 atmosphere.
Claim 18
Dependent Claim
29 words
The method of claim 10 wherein the step of depositing a layer of W is carried out by reacting WF 6 with excess H 2 in a CVD reactor.
Claim 19
Independent Claim
149 words
A method for fabricating a high performance capacitor in a semiconductor device comprising: providing a substrate having a device region thereon; forming a dielectric layer to overlie the substrate; forming a refractory-metal conductor on the device region having a horizontal surface and substantially vertical wall surfaces; forming a layer of Al overlying the refractory metal conductor and remaining portions of the substrate; reacting Al and refractory metal to form an Al alloy layer; etching away unreacted Al from the surface of the substrate; oxidizing the Al alloy layer to form an Al 2 O 3 layer overlying the refractory-metal conductor to form a capacitor dielectric wherein the Al 2 O 3 layer overlies only the horizontal and substantially vertical wall surfaces of the refractory-metal conductor; and forming a conductive top plate overlying the Al 2 O 3 layer and aligned to the wall surfaces of the refractory metal conductor.
Claim 20
Independent Claim
149 words
A method for fabricating a high performance capacitor in a semiconductor device comprising: providing a substrate having a device region thereon; forming a dielectric layer to overlie the substrate; forming a refractory-metal conductor on the device region having a horizontal surface and substantially vertical wall surfaces; forming a layer of Al overlying the refractory metal conductor and remaining portions of the substrate; reacting Al and refractory metal to form an Al alloy layer; etching away unreacted Al from the surface of the substrate; oxidizing the Al alloy layer to form an Al 2 O 3 layer overlying the refractory-metal conductor to form a capacitor dielectric wherein the Al 2 O 3 layer overlies only the horizontal and substantially vertical wall surfaces of the refractory-metal conductor; and forming a conductive top plate overlying the Al 2 O 3 layer and aligned to the wall surfaces of the refractory metal conductor.
Claim 21
Dependent Claim
21 words
The method of claim 14 wherein the refractory-metal is selected from the group consisting of W, Mo, Cr, Co and Pt.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-30 | 1995-12-30 | 1996-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-30 | 1999-12-30 | 2000-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-30 | 2003-12-30 | 2004-06-30 | $7700.00 | Window Closed / Lapsed |