Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the local disappearance of Al wiring patterns and the disconnection of Al wirings by a method wherein an Al oxide film which is stable chemically is formed in uniformity over the wiring surface including wiring side surfaces by an anodic oxidation method, and thereafter a plasma nitride film is grown. CONSTITUTION:After forming the uppermost layer wiring 3 by patterning, the entire body of the surface is covered with anodic oxidized aluminum 15. Thereafter, the plasma nitride film 4 as a passivation is grown, and thus the Al and the plasma nitride film are contrived not to be in direct contact. Each lower layer wiring layer under the upper layer wiring layer is isolated and insulated by respective layer insulation films, and the necessary part for construction of an electric circuit is brought into electric contact via a through hole bored on the layer insulation film. This method makes it possible that the entire body of a wiring surface including wiring side surfaces is coated with a uniform Al oxide film, and the film thickness thereof can be controlled to the film thickness enough to inhibit the diffusion reaction of Al to the plasma nitride film by suitably selecting the voltage impressed from the outside and the kind and the concentration of solution at the time of anodic oxidation.

Inventors

• 👤 Noboru Ozeki
• 👤 昇 大関

Bibliographic Details