US5115290A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Mos type semiconductor device and method for manufacturing the same
Assignee: Toshiba Corp
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Filing: 1990-09-05
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Granted: 1992-05-19
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Expires: 2010-09-05
Abstract
Abstract A MOS type semiconductor device and a method for the manufacture of the same are disclosed in which a gate electrode is so formed over a semiconductor substrate of a first conductivity type with a gate insulating film formed therebetween as to provide a three-layered structure composed of a first high melting point metal silicide layer formed on the gate insulating film, high melting point metal layer formed on the first high melting point metal silicide and a second high melting point metal silicide layer formed on the high melting point metal layer. In the gate electrode, a length of the first high melting point silicide layer defined in the same direction as that in which a channel region extends is made smaller in length than the high melting point metal layer.
Inventors
- 👤 Kouji Murakami
- 👤 Taira Matsunaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:11
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/667; H10D64/668; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/518; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01318; H10D64/0132; H10D64/01324
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
154 words
A MOS type semiconductor device comprising: a semiconductor substrate of a first conductivity type: source and drain regions of a second conductivity type formed in a surface portion of the semiconductor substrate; a channel region formed in the surface portion of the semiconductor substrate such that it extends between the source and drain regions; a gate insulating film formed at least on the channel region; and a gate electrode comprising a first high melting point metal silicide layer formed on the gate insulating film, a high melting point metal layer formed on the first high melting point metal silicide layer and a second high melting point metal silicide layer formed on the high melting point metal layer, in which a length of the first high melting point silicide layer defined in the same direction as that in which the channel region extends is made shorter in length than the high melting point metal layer.
Claim 2
Dependent Claim
154 words
A MOS type semiconductor device comprising: a semiconductor substrate of a first conductivity type: source and drain regions of a second conductivity type formed in a surface portion of the semiconductor substrate; a channel region formed in the surface portion of the semiconductor substrate such that it extends between the source and drain regions; a gate insulating film formed at least on the channel region; and a gate electrode comprising a first high melting point metal silicide layer formed on the gate insulating film, a high melting point metal layer formed on the first high melting point metal silicide layer and a second high melting point metal silicide layer formed on the high melting point metal layer, in which a length of the first high melting point silicide layer defined in the same direction as that in which the channel region extends is made shorter in length than the high melting point metal layer.
Claim 3
Dependent Claim
61 words
The MOS type semiconductor device according to claim 1, wherein said first and second high melting point silicide layers are one selected from the group consisting of a molybdenum silicide layer, a titanium silicide layer and tungsten silicide layer and said high melting point metal layer is formed of a material selected from the group consisting of molybdenum, titanium and tungsten.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-19 | 1995-11-18 | 1996-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-19 | 1999-11-18 | 2000-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-19 | 2003-11-18 | 2004-05-19 | $7700.00 | Window Closed / Lapsed |