Abstract The invention is a modified organic photoresist which is resistant to etching in oxygen-containing plasmas and therefore particularly useful for masking and etching organic polymer materials in VLSI and advanced packaging applications. The invention comprises adding a phosphorous-containing compound to a conventional photoresist. The phosphorous-containing compound is of a type and in an amount effective to substantially prevent etching of the modified photoresist in an oxygen-containing plasma without substantially adversely affecting the photosensitivity of the photoresist or the elasticity or the adhesion of the etch resistant film formed during oxygen-containing plasma exposure to an underlying material to be patterned and etched.
A wafer of semiconductor material and one or more layers of material thereon which together define devices and device-precursor geometries, and coated with a modified organic photoresist composition formed from a mixture of an organic photoresist and a phosphorous-containing compound of a type and in an amount effective to substantially prevent etching of said composition in an oxygen-containing plasma without substantially adversely affecting the photosensitivity of said photoresist or the elasticity or adhesion of the etch resistant film formed during oxygen-containing plasma exposure to an underlying material to be patterned and etched, and wherein at least one of said layers coated with said modified photoresist composition is selected from the group consisting of: polyimides, polydimethylglutarimide, crosslinked novolac resins, and thermosetting polyesters.
Claim 2
Dependent Claim
121 words
A wafer of semiconductor material and one or more layers of material thereon which together define devices and device-precursor geometries, and coated with a modified organic photoresist composition formed from a mixture of an organic photoresist and a phosphorous-containing compound of a type and in an amount effective to substantially prevent etching of said composition in an oxygen-containing plasma without substantially adversely affecting the photosensitivity of said photoresist or the elasticity or adhesion of the etch resistant film formed during oxygen-containing plasma exposure to an underlying material to be patterned and etched, and wherein at least one of said layers coated with said modified photoresist composition is selected from the group consisting of: polyimides, polydimethylglutarimide, crosslinked novolac resins, and thermosetting polyesters.