US5111260A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Polysilicon FETs
Assignee: Texas Instruments Inc
•
Filing: 1990-07-05
•
Granted: 1992-05-05
•
Expires: 2010-07-05
Abstract
Abstract Field effect transistors in which the channel region is made of thin highly doped polysilicon which is preferably also hydrogen passivated.
Inventors
- 👤 Satwinder Malhi
- 👤 Rajiv Shah
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:33
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
203 words
A polycrystalline-channel field effect transistor comprising: a channel region consisting essentially of polycrystalline silicon doped to have an equilibrium carrier concentration of at least 5×10 16 per cubic centimeter and also comprising a significant admixture of a grain-boundary-passivating species; source and drain regions connected to said channel region and having the same conductivity type as said channel region; said channel region being bounded at a first surface thereof by a gate which is capacitatively coupled through a dielectric to said channel region, and said channel region being bounded at a second surface thereof opposite to said first surface by a backside interface; wherein said channel consists predominantly of polysilicon, and wherein said channel is bounded at said first and second surfaces thereof by a dielectric predominantly comprising silicon dioxides; wherein said first surface has interface characteristics such as to deplete said channel to a first depth inward from said first surface, and said second surface has interface characteristics such as to deplete said channel to a second depth inward from said second surface, and the sum of said first and second depths is greater than the minimum thickness of said channel region, whereby said transistor is not conductive under zero applied gate voltage.
Claim 2
Dependent Claim
203 words
A polycrystalline-channel field effect transistor comprising: a channel region consisting essentially of polycrystalline silicon doped to have an equilibrium carrier concentration of at least 5×10 16 per cubic centimeter and also comprising a significant admixture of a grain-boundary-passivating species; source and drain regions connected to said channel region and having the same conductivity type as said channel region; said channel region being bounded at a first surface thereof by a gate which is capacitatively coupled through a dielectric to said channel region, and said channel region being bounded at a second surface thereof opposite to said first surface by a backside interface; wherein said channel consists predominantly of polysilicon, and wherein said channel is bounded at said first and second surfaces thereof by a dielectric predominantly comprising silicon dioxides; wherein said first surface has interface characteristics such as to deplete said channel to a first depth inward from said first surface, and said second surface has interface characteristics such as to deplete said channel to a second depth inward from said second surface, and the sum of said first and second depths is greater than the minimum thickness of said channel region, whereby said transistor is not conductive under zero applied gate voltage.
Claim 3
Dependent Claim
19 words
The transistor of claim 1, wherein said gate is heavily doped N-type polysilicon and said channel is P-type polysilicon.
Claim 4
Dependent Claim
13 words
The transistor of claim 1, wherein said passivating species consists essentially of hydrogen.
Claim 5
Dependent Claim
162 words
A polycrystalline-channel field effect transistor comprising: a channel region comprising a polycrystalline semiconductor material doped to have an equilibrium carrier concentration of at least 5×10 16 per cubic centimeter; source and drain-regions connected to said channel region and having the same conductivity type as said channel region; said channel region being bounded at a first surface thereof by a gate which is capacitatively coupled to said channel region, and said channel region being bounded at a second surface thereof opposite to said first surface by a backside interface, wherein said first surface has interface characteristics such as to deplete said channel to a first depth inward from said first surface, and said second surface has interface characteristics such as to deplete said channel to a second depth inward from said second surface, and the sum of said first and second depths is greater than the minimum thickness of said channel region, whereby said transistor is not conductive under zero applied gate voltage.
Claim 6
Dependent Claim
162 words
A polycrystalline-channel field effect transistor comprising: a channel region comprising a polycrystalline semiconductor material doped to have an equilibrium carrier concentration of at least 5×10 16 per cubic centimeter; source and drain-regions connected to said channel region and having the same conductivity type as said channel region; said channel region being bounded at a first surface thereof by a gate which is capacitatively coupled to said channel region, and said channel region being bounded at a second surface thereof opposite to said first surface by a backside interface, wherein said first surface has interface characteristics such as to deplete said channel to a first depth inward from said first surface, and said second surface has interface characteristics such as to deplete said channel to a second depth inward from said second surface, and the sum of said first and second depths is greater than the minimum thickness of said channel region, whereby said transistor is not conductive under zero applied gate voltage.
Claim 7
Dependent Claim
84 words
A polycrystalline-channel field effect transistor comprising: a channel region comprising polycrystalline semiconductor material; source and drain regions connected to said channel region; and a gate positioned to apply an electric field to said channel region between said source and drain regions; wherein said channel has an equilibrium carrier concentration of at least 5×10 16 per cubic centimeter, and is of the same conductivity type as said source and drain regions; wherein said channel is sufficiently thin to be depleted at zero applied gate voltage.
Claim 8
Dependent Claim
84 words
A polycrystalline-channel field effect transistor comprising: a channel region comprising polycrystalline semiconductor material; source and drain regions connected to said channel region; and a gate positioned to apply an electric field to said channel region between said source and drain regions; wherein said channel has an equilibrium carrier concentration of at least 5×10 16 per cubic centimeter, and is of the same conductivity type as said source and drain regions; wherein said channel is sufficiently thin to be depleted at zero applied gate voltage.
References Cited (Backward Citations)
US3500137A
Cited
US3814992A
Cited
US3891468A
Cited
US3958266A
Cited
US4072974A
Cited
JPS5248475A
Cited
JPS5565472A
Cited
US4395726A
Cited
US4389481A
Cited
EP0061923A1
Cited
JPS584974A
Cited
EP0073603A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-05 | 1995-11-04 | 1996-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-05 | 1999-11-04 | 2000-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-05 | 2003-11-04 | 2004-05-05 | $7700.00 | Window Closed / Lapsed |