US5108935A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reduction of hot carrier effects in semiconductor devices by controlled scattering via the intentional introduction of impurities
Assignee: Texas Instruments Inc
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Filing: 1990-11-16
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Granted: 1992-04-28
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Expires: 2010-11-16
Abstract
Abstract This invention discloses a method for reducing hot carriers in a transistor structure by means of increasing the scattering rate of the carriers. The increased scattering rate is accomplished by introducing scattering sites comprising of non-conventional dopants, an element which is not boron, phosphorous, or arsenic, into the base or channel region of a transistor.
Inventors
- 👤 Mark S. Rodder
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:01
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0221; H10D62/00; H10D62/80; H10D62/83; H10D62/834; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/918
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
38 words
A method of fabricating a transistor with reduced hot carrier generation, said method comprising: introducing scattering sites comprised of non-conventional dopants into regions of said transistor, wherein the scattering sites are introduced by in-situ introduction during material deposition.
Claim 2
Independent Claim
38 words
A method of fabricating a transistor with reduced hot carrier generation, said method comprising: introducing scattering sites comprised of non-conventional dopants into regions of said transistor, wherein the scattering sites are introduced by in-situ introduction during material deposition.
Claim 3
Dependent Claim
28 words
The method of claim 1, wherein said transistor is selected from the group consisting of: vertical bipolar junction transistor, lateral bipolar junction transistor, vertical MOSFET, or lateral MOSFET.
Claim 4
Dependent Claim
29 words
The method of claim 1, wherein said transistor region is selected from the group consisting of: the base region, the channel region, and a portion of the channel region.
Claim 5
Dependent Claim
26 words
The method of claim 1, wherein concentration of said scattering sites is greater than 10 17 cm 3 but less than 10 20 cm 3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-28 | 1995-10-28 | 1996-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-28 | 1999-10-28 | 2000-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-28 | 2003-10-28 | 2004-04-28 | $7700.00 | Window Closed / Lapsed |