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EP0035598A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

A method of manufacturing a semiconductor device having reduced leakage currents

Assignee: Fujitsu Ltd
•
Filing: 1980-12-16
•
Granted: —
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Expires: 2000-12-16
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Abstract

Abstract A method of fabricating semiconductor integrated circuits devices in which leakage currents at the junction and at the surface are substantially reduced. The shallow source and drain regions are formed by ion implantation of arsenic. An insulating layer of phosphosilicate glass (PSG) is formed on the entire surface of the semiconductor substrate, windows are cut through the PSG layer to form windows for contacts or electrodes. Oxygen ions having the effect of gettering defects are ion implanted through these windows into the surface of source and drain regions and the PSG layer is thermally melted to offer MOS memory devices, other MOS devices or bipolar transistors.

Inventors

  • 👤 Hiroyuko Ikubo
  • 👤 Kunihiko Wada

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-28 16:30
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D62/80; H10D62/83; H10D62/834; H10P30/208; H10P36/00; H10P36/03

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 105 words
In a method of manufacturing a semiconductor device, a method of forming one conductivity type region in a semiconductor substrate to substantially reduce leakage currents at the junction and at the surface, characterized by the following steps: ion implanting of impurity material into said semiconductor substrate to form a desired region, forming an insulating layer on the entire surface of said semiconductor substrate, and opening windows on said desired region for electrodes or contacts which have a smaller area than said desired region, and implanting through said windows ions of gettering material having the effect of gettering defects into the surface of said desired region.
Claim 2
Dependent Claim 105 words
In a method of manufacturing a semiconductor device, a method of forming one conductivity type region in a semiconductor substrate to substantially reduce leakage currents at the junction and at the surface, characterized by the following steps: ion implanting of impurity material into said semiconductor substrate to form a desired region, forming an insulating layer on the entire surface of said semiconductor substrate, and opening windows on said desired region for electrodes or contacts which have a smaller area than said desired region, and implanting through said windows ions of gettering material having the effect of gettering defects into the surface of said desired region.
Claim 3
Dependent Claim 20 words
The method of claim 1 wherein said impurity material is selected from the group consisting of arsenic, phosphorus and boron.
Claim 4
Dependent Claim 21 words
The method of claim 1 or 2 wherein said desired regions are source and drain regions of MOS field effect transistors.
Claim 5
Independent Claim 25 words
The method of any of claims 1 to 3 wherein said gettering material is selected from the group consisting of oxygen, carbon, fluorine and argon.
Claim 6
Independent Claim 34 words
The method of any of claims 1 to 4 wherein said insulating layer is formed by phosphosilicate glass, and said insulating layer is thermally melted after ion implantation of oxygen, carbon fluorine or argon.

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