Method of low dose phoshorus implantation for oxide passivated diodes in <10> P-type silicon

Claim 2

In a method of making a low leakage, oxide passivated PN junction by low dosage ion implantation of phosphorus in a P-type region on a <100> face of a silicon monocrystal, which implantation is in a non-amorphizing dosage below 5 × 10 15 phosphorus ions per square centimeter, the improvement wherein prior to implantation anneal at least one ion selected from the group consisting of fluorine ions, chlorine ions, bromine ions, and silicon ions is also implanted in said region in an amorphizing dosage to produce a low leakage oxide passivated PN junction when said region is annealed in a strongly oxidizing atmosphere, and then annealing said region in a strongly oxidizing atmosphere at a temperature above about 900° C. to form said PN junction and concurrently grow a passivating silicon dioxide coating thereover, whereby said low leakage PN junction is produced and simultaneously passivated during implantation anneal.

Claim 3

In a method of making a low leakage, oxide passivated PN junction by low dosage ion implantation of phosphorus in a P-type region on a <100> face of a silicon monocrystal, which implantation is in a non-amorphizing dosage below 5 × 10 15 phosphorus ions per square centimeter, the improvement wherein prior to implantation anneal at least one ion selected from the group consisting of fluorine ions, chlorine ions, bromine ions, and silicon ions is also implanted in said region effective to convert said region to amorphous silicon and provide a low leakage oxide passivated PN junction when said region is annealed in a strongly oxidizing atmosphere, and then annealing said region is a strongly oxidizing atmosphere at a temperature above about 1000° C. to form said PN junction and concurrently grow a passivating silicon dioxide coating thereover, whereby said low leakage PN junction is produced and simultaneously passivated during implantation anneal.

Claim 4

In a method of making a low leakage, oxide passivated PN junction by low dosage ion implantation of phosphorus in a P-type region on a <100> face of a silicon monocrystal, which implantation is in a non-amorphizing dosage below 5 × 10 15 phosphorus ions per square centimeter, the improvement wherein prior to implantation anneal at least one ion selected from the group consisting of fluorine ions, chlorine ions, bromine ions, and silicon ions is also implanted in said region effective to convert said region to amorphous silicon and provide a low leakage oxide passivated PN junction when said region is annealed in a strongly oxidizing atmosphere, and then annealing said region is a strongly oxidizing atmosphere at a temperature above about 1000° C. to form said PN junction and concurrently grow a passivating silicon dioxide coating thereover, whereby said low leakage PN junction is produced and simultaneously passivated during implantation anneal.

Claim 5

In a method of making a low leakage, oxide passivated PN junction by low dosage ion implantation of phosphorus in a P-type region on a <100> face of a silicon monocrystal, which implantation is in a non-amorphizing dosage below about 5 × 10 15 phosphorus ions per square centimeter, the improvement wherein prior to implantation anneal at least one ion selected from the group consisting of fluorine ions and chlorine ions is also implanted in said region in an amorphizing dosage to provide a low leakage oxide passivated PN junction when said region is annealed in a moist oxygen atmosphere, and then heating the monocrystal in a moist oxygen atmosphere at a temperature of about 1000° C. to anneal said region and concurrently grow a passivating silicon dioxide coating thereover, whereby said low leakage PN junction is simultaneously produced and oxide passivated in one heating operation.

Claim 6

In a method of making a low leakage, oxide passivated PN junction by low dosage ion implantation of phosphorus in a P-type region on a <100> face of a silicon monocrystal, which implantation is in a non-amorphizing dosage below about 5 × 10 15 phosphorus ions per square centimeter, the improvement wherein prior to implantation anneal at least one ion selected from the group consisting of fluorine ions and chlorine ions is also implanted in said region in an amorphizing dosage to provide a low leakage oxide passivated PN junction when said region is annealed in a moist oxygen atmosphere, and then heating the monocrystal in a moist oxygen atmosphere at a temperature of about 1000° C. to anneal said region and concurrently grow a passivating silicon dioxide coating thereover, whereby said low leakage PN junction is simultaneously produced and oxide passivated in one heating operation.

Claim 7

In a method of making a low leakage, oxide passivated PN junction by low dosage phosphorus ion implantation in a P-type region on a <100> face of a silicon monocrystal, which implantation is in a non-amorphizing dosage below about 2 × 10 15 phosphorus ions per square centimeter, the improvement wherein after phosphorus implantation and prior to implantation anneal at least one ion selected from the group consisting of fluorine ions and chlorine ions is also implanted in said phosphorus implanted region in an amorphizing dosage to permit a low leakage oxide passivated PN junction to be formed when said region is annealed in a strongly oxidizing atmosphere, and then annealing said region in a moist oxygen atmosphere at a temperature of about 1000°-1200° C. to form said PN junction and concurrently grow a passivating silicon dioxide coating at least about 3000 angstroms thick thereover, whereby said low leakage PN junction is produced and simultaneously passivated during implantation anneal.

Claim 8

In a method of making a low leakage, oxide passivated PN junction by low dosage phosphorus ion implantation in a P-type region on a <100> face of a silicon monocrystal, which implantation is in a non-amorphizing dosage below about 2 × 10 15 phosphorus ions per square centimeter, the improvement wherein after phosphorus implantation and prior to implantation anneal at least one ion selected from the group consisting of fluorine ions and chlorine ions is also implanted in said phosphorus implanted region in an amorphizing dosage to permit a low leakage oxide passivated PN junction to be formed when said region is annealed in a strongly oxidizing atmosphere, and then annealing said region in a moist oxygen atmosphere at a temperature of about 1000°-1200° C. to form said PN junction and concurrently grow a passivating silicon dioxide coating at least about 3000 angstroms thick thereover, whereby said low leakage PN junction is produced and simultaneously passivated during implantation anneal.

Claim 9

In a method of making a low leakage, oxide passivated PN junction by low dosage ion implantation of phosphorus in a P-type region on a <100> face of a silicon monocrystal, which implantation is in a dosage below about 1 × 10 15 phosphorus ions per square centimeter, the improvement wherein after phosphorus implantation and prior to anneal, the phosphorus implanted region is connected to amorphous silicon by also implanting therein at least one ion selected from the group consisting of fluorine ions and chlorine ions in a dose equivalent to at least about 3 × 10 15 fluorine ions per square centimeter at a rate of 1 microampere per square centimeter, whereby a low leakage PN junction can be simultaneously produced and oxide passivated upon implantation anneal in a moist oxygen atmosphere, and then annealing said region in a moist oxygen atmosphere at a temperature of about 1000°-1200° C. for 1-5 hours to concurrently form said low leakage PN junction by annealing said region and grow a passivating silicon dioxide coating at least about 3000 angstroms thick over said PN junction.

Claim 10

In a method of making a low leakage, oxide passivated PN junction by low dosage ion implantation of phosphorus in a P-type region on a <100> face of a silicon monocrystal, which implantation is in a dosage below about 1 × 10 15 phosphorus ions per square centimeter, the improvement wherein after phosphorus implantation and prior to anneal, the phosphorus implanted region is connected to amorphous silicon by also implanting therein at least one ion selected from the group consisting of fluorine ions and chlorine ions in a dose equivalent to at least about 3 × 10 15 fluorine ions per square centimeter at a rate of 1 microampere per square centimeter, whereby a low leakage PN junction can be simultaneously produced and oxide passivated upon implantation anneal in a moist oxygen atmosphere, and then annealing said region in a moist oxygen atmosphere at a temperature of about 1000°-1200° C. for 1-5 hours to concurrently form said low leakage PN junction by annealing said region and grow a passivating silicon dioxide coating at least about 3000 angstroms thick over said PN junction.

Claim 11

In a method of making a low leakage, oxide passivated PN junction by low dosage phosphorus ion implantation in a P-type region on a <100> face of a silicon monocrystal, which implantation is in a dosage below 1 × 10 15 phosphorus ions per square centimeter, the improvement wherein prior to implantation anneal the region implanted with phosphorus is given an implant of at least one ion selected from the group consisting of fluorine ions and chlorine ions effective to convert said phosphorus implanted region to amorphous silicon and provide a low leakage oxide passivated PN junction when said region is annealed in a strongly oxidizing atmosphere, and then heating said monocrystal in a moist oxygen atmosphere at a temperature of about 1000°-1200° C. for about 1-5 hours to concurrently epitaxially convert said amorphous silicon region to N-type monocrystalline silicon, form a PN junction between said region and adjacent unimplanted P-type silicon, and grow a passivating silicon dioxide coating at least 5000 angstroms thick thereover, whereby a PN junction of low leakage is produced and simultaneously passivated during the implantation anneal.

Claim 12

In a method of making a low leakage, oxide passivated PN junction by low dosage phosphorus ion implantation in a P-type region on a <100> face of a silicon monocrystal, which implantation is in a dosage below 1 × 10 15 phosphorus ions per square centimeter, the improvement wherein prior to implantation anneal the region implanted with phosphorus is given an implant of at least one ion selected from the group consisting of fluorine ions and chlorine ions effective to convert said phosphorus implanted region to amorphous silicon and provide a low leakage oxide passivated PN junction when said region is annealed in a strongly oxidizing atmosphere, and then heating said monocrystal in a moist oxygen atmosphere at a temperature of about 1000°-1200° C. for about 1-5 hours to concurrently epitaxially convert said amorphous silicon region to N-type monocrystalline silicon, form a PN junction between said region and adjacent unimplanted P-type silicon, and grow a passivating silicon dioxide coating at least 5000 angstroms thick thereover, whereby a PN junction of low leakage is produced and simultaneously passivated during the implantation anneal.