Patent US5107316A successfully refreshed from Google Patents.
US5107316A
Expired / Lapsed
US
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Catoptrical opto-electronic gas sensor
Assignee: Siemens Corporate Research Inc
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Filing: 1989-12-28
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Granted: 1992-04-21
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Expires: 2009-12-28
Abstract
Abstract Apparatus for detecting the presence of a gas in an ambient atmosphere comprises a multiple quantum well structure; a thin layer of a transition metal formed on the multiple quantum well structure; and an arrangement for monitoring the transmission of electromagnetic radiation sent through the multiple quantum well structure and reflected back therethrough by the thin layer.
Inventors
- 👤 Kevin W. Jelley
- 👤 Carl Colvard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:20
CPC Classifications
G; G01; G01N; G01N21/00; G01N21/75; G01N21/77; G01N21/78; G01N21/783; G01N21/17; G01N21/25; G01N21/31; G01N2021/3185; G01N2021/3192; G01N2201/00; G01N2201/06; G01N2201/067
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
152 words
A semiconductor device adapted for operation as a gas sensor, comprising: a body of a semiconductor material including a substrate region and including a superlattice region over said substrate region, said superlattice region having first and second different materials arranged alternately in a plurality of parallel planar layers, said planar layers exhibiting an absorption edge for electromagnetic radiation at a first wavelength thereof and having a respective predetermined relatively thin thickness dimension of a value wherein an electric field acting perpendicularly to said planar layers causes said absorption edge to shift to a second wavelength of said electromagnetic radiation; a layer of a transition metal over said superlattice region, said layer of a transition metal having a relatively thin thickness dimension and being sufficiently thin so as to be substantially permeable to a gas; and means for reflecting back electromagnetic radiation transmitted towards said layer of transition metal through said superlattice region.
Claim 2
Dependent Claim
152 words
A semiconductor device adapted for operation as a gas sensor, comprising: a body of a semiconductor material including a substrate region and including a superlattice region over said substrate region, said superlattice region having first and second different materials arranged alternately in a plurality of parallel planar layers, said planar layers exhibiting an absorption edge for electromagnetic radiation at a first wavelength thereof and having a respective predetermined relatively thin thickness dimension of a value wherein an electric field acting perpendicularly to said planar layers causes said absorption edge to shift to a second wavelength of said electromagnetic radiation; a layer of a transition metal over said superlattice region, said layer of a transition metal having a relatively thin thickness dimension and being sufficiently thin so as to be substantially permeable to a gas; and means for reflecting back electromagnetic radiation transmitted towards said layer of transition metal through said superlattice region.
Claim 3
Dependent Claim
25 words
A semiconductor device is recited in claim 1, wherein said layer of a transition metal is sufficiently thick as to substantially reflect said electomagnetic radiation.
Claim 4
Dependent Claim
29 words
A semiconductor device as recited in claim 1, wherein said first material is aluminum gallium arsenide (Al x GaAs 1-x ) and said second material is gallium arsenide (GaAs).
Claim 5
Dependent Claim
18 words
A semiconductor device as recited in claim 3, wherein said layer of a transition metal is of palladium.
Claim 6
Dependent Claim
28 words
A semiconductor device as recited in claim 1, wherein said substrate region has at least a portion thereof removed for providing a clear passage for said electromagnetic radiation.
Claim 7
Dependent Claim
28 words
A semiconductor device as recited in claim 4, wherein said substrate region has at least a portion thereof removed for providing a clear passage for said electromagnetic radiation.
Claim 8
Dependent Claim
33 words
A semiconductor device as recited in claim 4, wherein said layer of a transition metal is formed on a final layer of said superlattice region, said final layer being of aluminum gallium arsenide.
Claim 9
Dependent Claim
27 words
A semiconductor device as recited in claim 1, wherein said electromagnetic radiation is light, including fiber optic means for coupling light to and from said superlattice region.
Claim 10
Dependent Claim
25 words
A semiconductor device as recited in claim 8, wherein said fiber optic means comprises a fiber for incoming light and a fiber for outgoing light.
Claim 11
Dependent Claim
20 words
A semiconductor device as recited in claim 8, wherein said light is coupled to an interface at the Brewster angle.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-21 | 1995-10-21 | 1996-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-21 | 1999-10-21 | 2000-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-21 | 2003-10-21 | 2004-04-21 | $7700.00 | Window Closed / Lapsed |