US4208667A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Controlled absorption in heterojunction structures
Assignee: United States Department of the Army
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Filing: 1978-06-09
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Granted: 1980-06-17
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Expires: 1998-06-09
Abstract
Abstract A heterojunction structure made of two semiconductor layers is disclosed inhich light is applied to the structure and absorbed, and the emission of light from the structure is controlled by an electric field applied perpendicularly to the planes of the layers. It is further disclosed that the device can be employed as a selective light filter or modulator.
Inventors
- 👤 Leroy L. Chang
- 👤 Leo Esaki
- 👤 George A. Sai-Halasz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:19
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/015; G02F1/017; B; B82; B82Y; B82Y20/00; G02F2/00; G02F2/02; H; H10; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H10F; H10F55/00; G02F1/0155; G02F1/0157
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
161 words
An optical device comprising: a semiconductor superlattice having two different materials arranged alternately in parallel layers to form a plurality of semiconductor heterojunctions; the bottom of the conduction band of one of said materials being lower than the bottom of the conduction band of the other of said materials to form a series of potential wells and potential barriers; the top of the valance band of said one of said materials being lower than the top of the valance band of said other of said materials to form a series of potential wells and potential barriers; means for directing light onto said optical device with a sufficient energy to create hole-electron pairs in said potential wells; and means for selectively applying a voltage across said layers transverse to the plane of said heterojunctions for selectively causing changes in the spatial separation of said potential wells thereby selectively causing spontaneous recombination of said electrons and holes with a resultant emission of light.
Claim 2
Dependent Claim
161 words
An optical device comprising: a semiconductor superlattice having two different materials arranged alternately in parallel layers to form a plurality of semiconductor heterojunctions; the bottom of the conduction band of one of said materials being lower than the bottom of the conduction band of the other of said materials to form a series of potential wells and potential barriers; the top of the valance band of said one of said materials being lower than the top of the valance band of said other of said materials to form a series of potential wells and potential barriers; means for directing light onto said optical device with a sufficient energy to create hole-electron pairs in said potential wells; and means for selectively applying a voltage across said layers transverse to the plane of said heterojunctions for selectively causing changes in the spatial separation of said potential wells thereby selectively causing spontaneous recombination of said electrons and holes with a resultant emission of light.
Claim 3
Dependent Claim
27 words
An optical device as defined in claim 1, in which said one material is an alloy of GaSb and said other material is an alloy of InAs.
Claim 4
Dependent Claim
27 words
An optical device as defined in claim 1, in which said one material is an alloy of GaSbAs and said other material is an alloy of InGaAs.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-06-17 | 1983-12-17 | 1984-06-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-06-17 | 1987-12-17 | 1988-06-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-06-17 | 1991-12-17 | 1992-06-17 | $7700.00 | Window Closed / Lapsed |