Patent US5107151A successfully refreshed from Google Patents.
US5107151A
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US
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Switching circuit employing electronic devices in series with an inductor to avoid commutation breakdown and extending the current range of switching circuits by using igbt devices in place of mosfets
Assignee: Danfoss Power Solutions US Co
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Filing: 1990-05-30
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Granted: 1992-04-21
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Expires: 2010-05-30
Abstract
Abstract A switching circuit is provided which is to be connected to a power source. The circuit includes a first device, an inductor and a second device, all connected in series. Either a single inductor or a pair of series-connected inductors is connected in series between the first and second devices. One or both of the first and second devices are switched on and off to supply a load with an output voltage. The circuit can also include diodes to prevent harmful reverse current flow and to provide bypasses around the first and second devices. The first and second devices can be semiconductor elements, such as FETs, and particularly MOSFETs. The first device can be an IGBT.
Inventors
- 👤 Craig S. Cambier
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:03
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/60; H03K17/687; H03K17/6871; H03K17/6874; H02; H02P; H02P6/00; H02P6/14; H02P6/15; H02P6/153; H03K17/08; H03K17/081; H03K17/0814; H03K17/08142; H03K17/567
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
229 words
A switching circuit employing semiconductor devices in series with an inductor to avoid commutation breakdown and extending the current range of switching by using IGBT devices, said circuit for connecting to a power source having a high voltage rail and a low voltage rail, said circuit comprising: a first semiconductor device comprising an insulated gate bipolar transistor; a first inductor; a second inductor; a second semiconductor device; said first semiconductor device having an emitter connected to a first node, said first inductor connected at one end to said first node, said first inductor connected at a second end to a second node, said second inductor connected at one end to said second node, said second inductor connected at a second end to a third node, said second semiconductor device having a drain connected to said third node; and means for switching said first and second semiconductor devices each at a different rate, said switching means connected to a gate of said first and second semiconductor devices, respectively, such that when said circuit is connected to said power source by a source of said second semiconductor device being connected to said low voltage rail at a fourth node, and a collector of said first semiconductor device being connected to said high voltage rail at a fifth node, a load connected to said second node is supplied with an output voltage.
Claim 2
Dependent Claim
229 words
A switching circuit employing semiconductor devices in series with an inductor to avoid commutation breakdown and extending the current range of switching by using IGBT devices, said circuit for connecting to a power source having a high voltage rail and a low voltage rail, said circuit comprising: a first semiconductor device comprising an insulated gate bipolar transistor; a first inductor; a second inductor; a second semiconductor device; said first semiconductor device having an emitter connected to a first node, said first inductor connected at one end to said first node, said first inductor connected at a second end to a second node, said second inductor connected at one end to said second node, said second inductor connected at a second end to a third node, said second semiconductor device having a drain connected to said third node; and means for switching said first and second semiconductor devices each at a different rate, said switching means connected to a gate of said first and second semiconductor devices, respectively, such that when said circuit is connected to said power source by a source of said second semiconductor device being connected to said low voltage rail at a fourth node, and a collector of said first semiconductor device being connected to said high voltage rail at a fifth node, a load connected to said second node is supplied with an output voltage.
Claim 3
Dependent Claim
110 words
The circuit as in claim 1, wherein said circuit further comprises a first diode having an anode connected to said fourth node and a cathode connected to said first node to prevent harmful reverse current and to provide a bypass around said second semiconductor device which is not yet turned on while said first semiconductor device is just turned off and a second diode having an anode connected to said third node and a cathode connected to said fifth node to prevent harmful reverse current and to provide a bypass around said first semiconductor device which is not yet turned on while said second semiconductor device is just turned off.
Claim 4
Dependent Claim
41 words
The circuit as in claim 1, wherein said switching means includes means for controlling the first and second semiconductor devices, said means for controlling having a first frequency and a second frequency, said second frequency being greater than said first frequency.
Claim 5
Dependent Claim
14 words
The circuit as in claim 3, wherein said first frequency is a commutation frequency.
Claim 6
Dependent Claim
16 words
The circuit as in claim 3, wherein said second frequency is a pulse width modulation frequency.
Claim 7
Dependent Claim
27 words
The circuit as in claim 2, wherein said circuit further comprises a third diode connected between said of the first device and said fifth and first nodes.
Claim 8
Dependent Claim
13 words
The circuit as in claim 1, wherein said semiconductor element is a FET.
Claim 9
Dependent Claim
12 words
The circuit as in claim 1, wherein said FET is a MOSFET.
Claim 10
Dependent Claim
256 words
A switching circuit employing semiconductor devices in series with an inductor to avoid commutation breakdown and extending the current range of switching by using IGBT devices, said circuit for connecting to a power source having a high voltage rail and a low voltage rail, said circuit comprising: a first semiconductor device comprising an insulated gate bipolar transistor; an inductor; a second semiconductor device; said first semiconductor device having an emitter connected to a first node, a collector of said first semiconductor device connected to a second node; said inductor connected at one end to said first node, said inductor connected at a second end to a third node; said second semiconductor device having a drain connected to said third node, a source of said second semiconductor device connected to a fourth node; said circuit further comprising a first diode having an anode connected to said fourth node, a cathode of said first diode connected to said first node; a second diode having an anode connected to said third node, a cathode of said second diode connected to said second node; when means are connected to gates of said first nd second semiconductor devices for alternately switching said first semiconductor device on and off, a load connected, at a first end, to one of said first node and said third node is supplied with an output voltage when said high voltage rail is applied to said second node, and said low voltage rail is applied to said fourth node and to a second end of said load.
Claim 11
Dependent Claim
256 words
A switching circuit employing semiconductor devices in series with an inductor to avoid commutation breakdown and extending the current range of switching by using IGBT devices, said circuit for connecting to a power source having a high voltage rail and a low voltage rail, said circuit comprising: a first semiconductor device comprising an insulated gate bipolar transistor; an inductor; a second semiconductor device; said first semiconductor device having an emitter connected to a first node, a collector of said first semiconductor device connected to a second node; said inductor connected at one end to said first node, said inductor connected at a second end to a third node; said second semiconductor device having a drain connected to said third node, a source of said second semiconductor device connected to a fourth node; said circuit further comprising a first diode having an anode connected to said fourth node, a cathode of said first diode connected to said first node; a second diode having an anode connected to said third node, a cathode of said second diode connected to said second node; when means are connected to gates of said first nd second semiconductor devices for alternately switching said first semiconductor device on and off, a load connected, at a first end, to one of said first node and said third node is supplied with an output voltage when said high voltage rail is applied to said second node, and said low voltage rail is applied to said fourth node and to a second end of said load.
Claim 12
Dependent Claim
13 words
The circuit as in claim 9, wherein said semiconductor element is a FET.
Claim 13
Dependent Claim
12 words
The circuit as in claim 9, wherein said FET is a MOSFET.
References Cited (Backward Citations)
FR625369A
Cited
JPS5232525A
Cited
US4301496A
Cited
DE3233204A1
Cited
US4626715A
Cited
US4594650A
Cited
DE3316251A1
Cited
US4721869A
Cited
US4768141A
Cited
US4805079A
Cited
US4742208A
Cited
US4745537A
Cited
US4754385A
Cited
US4926302A
Cited
US4853832A
Cited
US5019770A
Cited
US4876635A
Cited
US4933621A
Cited
US4937725A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-21 | 1995-10-21 | 1996-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-21 | 1999-10-21 | 2000-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-21 | 2003-10-21 | 2004-04-21 | $7700.00 | Window Closed / Lapsed |