Photoelectric converting device with improved resetting transistor and information processing apparatus utilizing the same

Claim 2

A photoelectric converting device provided with a phototransistor having at least two main electrode regions (101, 104) of a semiconductor of a first conductive type, a semiconductor region (102) composed of a semiconductor having the same conductive type as and a lower impurity concentration than the main electrode regions and a control electrode region (103) (105) of a semiconductor of a second conductive type different from said first conductive type; and a field effect transistor having said control electrode region (103) (105), a region (116) being capable of forming a channel area, a region (106) of a semiconductor of the second conductive type, an a gate electrode (108) formed on said channel area; wherein said region (116) capable of forming the channel area is composed of a semiconductor having the same conductive type as and a higher impurity concentration than the lower impurity concentration semiconductor region (102) of said phototransistor, with a maximum depth larger than that of either of said control electrode region (105) and said second conductive type semiconductor region (106) of said field effect transistor, and wherein an opaque layer (113) is provided on said region (116) capable of forming the channel.

Claim 3

A device according to claim 1, wherein an area having a higher resistance than one of the main electrode regions is formed between the one (101) of said main electrode regions and said control electrode region, and said channel are forming region (116) is formed in said high resistance area.

Claim 4

A device according to claim 1, wherein said phototransistor and said field effect transistor are surrounded by an element isolation area (120) of semiconductor of the first conductive type.

Claim 5

A device according to claim 1, wherein said second conductive type semiconductor region (106) of said field effect transistor is formed in said channel area.

Claim 6

A device according to claim 1, wherein one (101) of said main electrode regions is so formed as to be connectable with a first reference voltage source (V cc ), and said second conductive type semiconductor region (106) of said field effect transistor is so formed as to be connectable with a second reference voltage source (V BB ).

Claim 11

An information processing apparatus comprising: a plurality of photoelectric converting devices, each photoelectric converting device provided with a phototransistor having at least two main electrode regions (101, 104) of a semiconductor of a first conductive type, a semiconductor region (102) composed of a semiconductor having the same conductive type as and a lower impurity concentration than the main electrode regions and a control electrode region (103) (105) of a semiconductor of a second conductive type different from said first conductive type; and a field effect transistor having said control electrode region (103) (105), a region (116) being capable of forming a channel area, a region (106) of a semiconductor of the second conductive type, and a gate electrode (108) formed on said channel area; wherein said region (116) capable of forming the channel area is composed of a semiconductor having the same conductive type as and a higher impurity concentration than the lower impurity concentration semiconductor region (102) of said phototransistor, with a maximum depth larger than that of either of said control electrode region (105) and said second conductive type semiconductor region (106) of said field effect transistor, and wherein an opaque layer (113) is provided on said region (116) capable of forming the channel; a light source; an optical system for focusing an image on said devices; means for supporting an original bearing image information to be read by said apparatus; and means for recording the image information read by said apparatus.

Claim 12

An information processing apparatus comprising: a plurality of photoelectric converting devices, each photoelectric converting device provided with a phototransistor having at least two main electrode regions (101, 104) of a semiconductor of a first conductive type, a semiconductor region (102) composed of a semiconductor having the same conductive type as and a lower impurity concentration than the main electrode regions and a control electrode region (103) (105) of a semiconductor of a second conductive type different from said first conductive type; and a field effect transistor having said control electrode region (103) (105), a region (116) being capable of forming a channel area, a region (106) of a semiconductor of the second conductive type, and a gate electrode (108) formed on said channel area; wherein said region (116) capable of forming the channel area is composed of a semiconductor having the same conductive type as and a higher impurity concentration than the lower impurity concentration semiconductor region (102) of said phototransistor, with a maximum depth larger than that of either of said control electrode region (105) and said second conductive type semiconductor region (106) of said field effect transistor, and wherein an opaque layer (113) is provided on said region (116) capable of forming the channel; a light source; an optical system for focusing an image on said devices; means for supporting an original bearing image information to be read by said apparatus; and means for recording the image information read by said apparatus.

Claim 13

An information processing apparatus according to claim 8, wherein said recording means is an ink jet recording head.

Claim 14

An information processing apparatus according to claim 9, wherein said recording head is a recording head adapted to discharge ink utilizing thermal energy.

Claim 15

A photoelectric converting device provided with a phototransistor having at least two main electrode regions (101, 104) of a semiconductor of a first conductive type, a semiconductor region (102) composed of a semiconductor having the same conductive type as and a lower impurity concentration than the main electrode regions and a control electrode region (103) (105) of a semiconductor of a second conductive type different from said first conductive type; and a field effect transistor having said control electrode region (103) (105), a region (116) being capable of forming a channel, a region (106) of a semiconductor of the second conductive type, and a gate electrode (108) formed on said channel; wherein said region (116) capable of forming a channel is composed of a semiconductor having the same conductive type as and a higher impurity concentration than the lower impurity concentration semiconductor region (102) of said phototransistor, with a maximum depth larger than that of either of said control electrode region (105) and said second conductive type semiconductor region (106) of said field effect transistor, and wherein said region (116) capable of forming the channel has the impurity concentration and depth sufficient to prevent connecting a depletion layer formed by said second conductive type semiconductor region (106) of the field effect transistor and said lower impurity concentration semiconductor region (102) of said phototransistor, and a depletion layer formed by said control electrode region (103, 105) and said lower impurity concentration semiconductor region (102) of said field effect transistor under said region (116) capable of forming a channel to cause punch-through.

Claim 16

A photoelectric converting device provided with a phototransistor having at least two main electrode regions (101, 104) of a semiconductor of a first conductive type, a semiconductor region (102) composed of a semiconductor having the same conductive type as and a lower impurity concentration than the main electrode regions and a control electrode region (103) (105) of a semiconductor of a second conductive type different from said first conductive type; and a field effect transistor having said control electrode region (103) (105), a region (116) being capable of forming a channel, a region (106) of a semiconductor of the second conductive type, and a gate electrode (108) formed on said channel; wherein said region (116) capable of forming a channel is composed of a semiconductor having the same conductive type as and a higher impurity concentration than the lower impurity concentration semiconductor region (102) of said phototransistor, with a maximum depth larger than that of either of said control electrode region (105) and said second conductive type semiconductor region (106) of said field effect transistor, and wherein said region (116) capable of forming the channel has the impurity concentration and depth sufficient to prevent connecting a depletion layer formed by said second conductive type semiconductor region (106) of the field effect transistor and said lower impurity concentration semiconductor region (102) of said phototransistor, and a depletion layer formed by said control electrode region (103, 105) and said lower impurity concentration semiconductor region (102) of said field effect transistor under said region (116) capable of forming a channel to cause punch-through.