US4791070A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating a solid state image sensing device
Assignee: Mitsubishi Electric Corp
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Filing: 1987-02-06
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Granted: 1988-12-13
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Expires: 2007-02-06
Abstract
Abstract A solid state image sensor including a photoelectric transducing diode (PD) formed on an n-type semiconductor substrate (1) and a MOS transistor (TRs). A signal photoelectrically transduced by the diode (PD) is amplified by a pnp-type transistor (TRa) formed on the substrate and between the diode (PD) and the MOS transistor (TRa). The amplified signal is read out by the MOS transistor. The source (4) of the MOS transistor is connected to the emitter (21) of the pnp-type transistor partly by a polysilicon (91).
Inventors
- 👤 Tadashi Hirao
- 👤 Shigeto Maekawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:20
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10F; H10F39/00; H10F39/011; H10F39/014; H10F39/028; H10F39/10; H10F39/12; H10F39/18
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
150 words
A process of manufacturing a solid state image sensing device, comprising the steps of: preparing a low-density n-type semiconductor substrate; forming a p-type semiconductor region in said low-density n-type semiconductor substrate; selectively forming a first n-type layer in said p-type semiconductor region; forming a first electrode on an insulating layer situated on said p-type semiconductor region; forming high-density second, third and fourth n-type layers in said p-type semiconductor region; forming a high-density p-type layer in said first n-type layer; defining contact windows to said third and fourth n-type layers; performing interconnection from the contact of said third n-type layer to the vicinity of said high-density p-type layer by a first connecting means having an insulating surface; defining a contact window in said high-density p-type layer; and performing interconnection from said first connecting means to the contact of said high-density p-type layer by a second connecting means of a low-resistance metal.
Claim 2
Dependent Claim
150 words
A process of manufacturing a solid state image sensing device, comprising the steps of: preparing a low-density n-type semiconductor substrate; forming a p-type semiconductor region in said low-density n-type semiconductor substrate; selectively forming a first n-type layer in said p-type semiconductor region; forming a first electrode on an insulating layer situated on said p-type semiconductor region; forming high-density second, third and fourth n-type layers in said p-type semiconductor region; forming a high-density p-type layer in said first n-type layer; defining contact windows to said third and fourth n-type layers; performing interconnection from the contact of said third n-type layer to the vicinity of said high-density p-type layer by a first connecting means having an insulating surface; defining a contact window in said high-density p-type layer; and performing interconnection from said first connecting means to the contact of said high-density p-type layer by a second connecting means of a low-resistance metal.
Claim 3
Dependent Claim
23 words
A process of manufacturing a solid state image sensing device in accordance with claim 1, wherein said first electrode is a polysilicon film.
Claim 4
Dependent Claim
36 words
A process of manufacturing a solid state image sensing device in accordance with claim 1, wherein said first connecting means is a polysilicon film, an amorphous silicon film or an epitaxially grown crystal or polycrystal film.
Claim 5
Dependent Claim
55 words
A process of manufacturing a solid state image sensing device in accordance with claim 1, wherein said step of defining contact windows in said third and fourth n-type layers includes first depositing a polysilicon film over said third and fourth n-type layers and further conducting phosphor deposition thereover for making said polysilicon film an n-type.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-13 | 1992-06-13 | 1992-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-13 | 1996-06-13 | 1996-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-13 | 2000-06-13 | 2000-12-13 | $7700.00 | Window Closed / Lapsed |