US4148048A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid-state imaging device
Assignee: Hitachi Ltd
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Filing: 1978-01-23
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Granted: 1979-04-03
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Expires: 1998-01-23
Abstract
Abstract A solid-state imaging device contains a photoelectric part in which a plurality of picture elements each consisting of a photodiode and a switching transistor are arranged in two dimensions. The picture elements are disposed on the same semiconductor substrate, and scanning circuits which scan the switching transistors of the photoelectric part in succession are provided. The solid-state imaging device further comprises a semiconductor layer which has a conductivity type opposite to that of the semiconductor substrate and which is disposed in one major surface of the semiconductor substrate and means for applying a reverse bias between the semiconductor layer and the semiconductor substrate. At least the photoelectric part is disposed within the semiconductor layer, and a high impurity concentration region which has the same conductivity type as that of the semiconductor layer and is disposed at least under a part of the photodiode.
Inventors
- 👤 Iwao Takemoto
- 👤 Norio Koike
- 👤 Masaharu Kubo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:02
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/182; H10F39/186
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
132 words
A solid-state imaging device comprising a semiconductor substrate of a first conductivity type having a first surface region of a second conductivity type opposite to said first conductivity type, means for biasing backwardly a pn junction which is constituted by said substrate and said first surface region, and a plurality of picture elements disposed in said first surface region, each of said picture element being comprised of: (i) a picture element region disposed in said first surface region and provided so as to be isolated from other picture elements; (ii) a first region of said first conductivity type disposed in said picture element region and constituting a pn-junction diode together with said first surface region; and (iii) detective means for detecting signal charges stored in a junction capacitance of said pn-junction diode.
Claim 2
Dependent Claim
132 words
A solid-state imaging device comprising a semiconductor substrate of a first conductivity type having a first surface region of a second conductivity type opposite to said first conductivity type, means for biasing backwardly a pn junction which is constituted by said substrate and said first surface region, and a plurality of picture elements disposed in said first surface region, each of said picture element being comprised of: (i) a picture element region disposed in said first surface region and provided so as to be isolated from other picture elements; (ii) a first region of said first conductivity type disposed in said picture element region and constituting a pn-junction diode together with said first surface region; and (iii) detective means for detecting signal charges stored in a junction capacitance of said pn-junction diode.
Claim 3
Dependent Claim
31 words
A solid-state imaging device according to claim 1, further comprising a scanning circuit provided in said semiconductor substrate and arranged in the peripheral part thereof with respect to said picture elements.
Claim 4
Dependent Claim
19 words
A solid-state imaging device according to claim 2, wherein said scanning circuit is provided in said first surface region.
Claim 5
Dependent Claim
36 words
A solid-state imaging device according to claim 2, further comprising a second surface region of said second conductivity type disposed in said semiconductor substrate, and wherein said scanning circuit is provided in said second surface region.
Claim 6
Dependent Claim
27 words
A solid-state imaging device according to claim 2, wherein said scanning circuit is provided in a region of said semiconductor substrate other than said first surface region.
Claim 7
Dependent Claim
60 words
A solid-state imaging device according to claim 1, wherein said detective means includes (i) a second region of said first conductivity type disposed in said picture element region, (ii) a gate insulating film provided so as to cover a region lying between said first region and said second region, and (iii) a gate electrode disposed on said gate insulating film.
Claim 8
Dependent Claim
44 words
A solid-state imaging device according to claim 2, wherein said picture elements are arranged in a two dimensional array and scanning circuit includes a first scanner addressing a horizontal direction of said array and a second scanner addressing a vertical direction of said array.
Claim 9
Dependent Claim
38 words
A solid-state imaging device according to claim 1, further comprising a photo shield layer consisting of a opaque material, having windows, and covering said detective means so as to permit incident light to illuminate only said pn-junction diodes.
Claim 10
Dependent Claim
43 words
A solid-state imaging device according to claim 1, wherein said picture element is further comprised of: (iv) a third region of said second conductivity type having an impurity concentration higher than that of said first surface region and disposed under said first region.
Claim 11
Dependent Claim
19 words
A solid-state imaging device according to claim 0, wherein said third region is included in said first surface region.
Claim 12
Dependent Claim
25 words
A solid-state imaging device according to claim 9, wherein said third region abuts said pn junction between said first surface region and said semiconductor substrate.
Claim 13
Dependent Claim
22 words
A solid-state imaging device according to claim 9, wherein said third region projects beyond said first surface region toward said semiconductor substrate.
Claim 14
Dependent Claim
21 words
A solid-state imaging device according to claim 9, wherein said third region is disposed under a part of said first region.
Claim 15
Dependent Claim
47 words
A solid-state imaging device according to claim 1, wherein the thickness of said first surface region is from 2μm to 10μm, and the impurity concentration of said first surface region is in the range from 1× 10 14 /cm 3 to 1× 10 16 /cm 3 .
Claim 16
Dependent Claim
45 words
A solid-state imaging device according to claim 9, wherein said first surface region has a thickness in the range from 2 μm to 10 μm and an impurity concentration in the range from 1× 10 14 /cm 3 to 1× 10 16 /cm 3 .
Claim 17
Dependent Claim
42 words
A solid-state imaging device according to claim 15, wherein said third region has a thickness in the range from 2μm to 6μm and an impurity concentration in the range from 1× 10 16 /cm 3 to 1× 10 18 /cm 3 .
Claim 18
Dependent Claim
62 words
A solid-state imaging device according to claim 1, wherein said means for biasing backwardly a pn junction includes (i) a first electrode provided so as to be electrically connected to said first surface region, (ii) a second electrode provided so as to be electrically connected to said semiconductor substrate, and (iii) a voltage source electrically connected between said first and second electrodes.
Claim 19
Dependent Claim
30 words
A solid-state imaging device according to claim 6, wherein said detective means further includes means for supplyiing a target voltage which has a predetermined voltage value to said second region.
Claim 20
Dependent Claim
33 words
A solid-state imaging device according to claim 18, wherein said detective means further inclues a detective electrode disposed on said second region, and wherein said target voltage is supplied to said detective electrode.
Claim 21
Dependent Claim
171 words
A solid-state imaging device comprising a semiconductor substrate of a first conductivity type having a major surface and having a first surface region of a second conductivity type opposite to said first conductivity type, means for biasing backwardly a pn junction which is constituted by said substrate and said first surface region, and a plurality of picture elements disposed in said first surface region, said picture elements being comprised of: (i) a picture element region disposed in said first surface region and provided so as to be isolated from other picture elements; (ii) a MOS structure having a transparent insulating film which is disposed on said major surface so as to cover a photosensitive region in said picture element region, having a transparent gate electrode which is disposed on said transparent insulating film and is supplied with a predetermined voltage so as to form an inversion layer under said transparent insulating film, and functioning as an electrostatic capacitance; and (iii) detective means for detecting signal charges stored in said photosensitive region.
Claim 22
Dependent Claim
171 words
A solid-state imaging device comprising a semiconductor substrate of a first conductivity type having a major surface and having a first surface region of a second conductivity type opposite to said first conductivity type, means for biasing backwardly a pn junction which is constituted by said substrate and said first surface region, and a plurality of picture elements disposed in said first surface region, said picture elements being comprised of: (i) a picture element region disposed in said first surface region and provided so as to be isolated from other picture elements; (ii) a MOS structure having a transparent insulating film which is disposed on said major surface so as to cover a photosensitive region in said picture element region, having a transparent gate electrode which is disposed on said transparent insulating film and is supplied with a predetermined voltage so as to form an inversion layer under said transparent insulating film, and functioning as an electrostatic capacitance; and (iii) detective means for detecting signal charges stored in said photosensitive region.
Claim 23
Dependent Claim
67 words
A solid-state imaging device according to claim 20, wherein said detective means includes (i) a detective region of said first conductivity type disposed in said picture element region, (ii) a transfer-gate insulating film disposed on said major surface so as to cover a region lying between said photosensitive region and said detective region, and (iii) at least one transfer-gate electrode disposed on said transfer gate insulating film.
Claim 24
Dependent Claim
45 words
A solid state imaging device according to claim 20, wherein said picture element is further comprised of: (iv) a highly doped region of said second conductivity type having an impurity concentration higher than that of said first surface region and disposed in said photosensitive region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-02 | 1982-10-02 | 1983-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-02 | 1986-10-02 | 1987-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-02 | 1990-10-02 | 1991-04-03 | $7700.00 | Window Closed / Lapsed |