Photoelectric converter

Claim 2

A photoelectric converter for outputting an output signal representative of light energy received, thereby, said photoelectric converter comprising: a light sensitive transistor comprising a control electrode region and first and second main electrode regions, said second main electrode region being connected to a voltage source and a junction being formed between said control electrode region and said first main electrode region, said control electrode region being for accumulating carriers in response to the light energy received while in a floating state; an output circuit comprising a capacitive element, said output circuit being connected to said first main electrode region and producing the output signal as a voltage across said capacitive element; and read-out means for reading a signal representative of the accumulated carriers to said output circuit, wherein during the reading by said read-out means, said control electrode is coupled to a potential source to forward bias the junction, and wherein said control electrode region is coupled to the potential source independently from said second main electrode region.

Claim 3

A converter according to claim 1, wherein the capacitance of said capacitive element is provided by stray capacitance of said output circuit.

Claim 4

A converter according to claim 1, further wherein said control electrode region is a base region and said first main electrode region is an emitter region.

Claim 5

A converter according to claim 1, comprising refresh means for extinguishing the accumulated carriers in said control electrode region.

Claim 6

A converter according to claim 4, wherein said refresh means forward biases the junction of said control and first main electrode regions to extinguish the accumulated carriers.

Claim 7

A converter according to claim 5, wherein said refresh means comprises a switching means for selectively connecting said control electrode region to a second voltage source to extinguish the accumulated carriers.

Claim 8

A converter according to claim 5, wherein said refresh means selectively connects said first main electrode region to a reference potential to extinguish the accumulated carriers.

Claim 9

A converter according to claim 7, wherein said refresh means comprises switching means for selectively connecting said first main electrode region to the reference potential.

Claim 10

A converter according to claim 5, wherein the forward bias during the reading by said read-out means is at a different level than the forward bias during the extinguishing by said refresh means.

Claim 11

A converter according to claim 9, wherein the forward bias during the extinguishing by said refresh means is greater than the forward bias during the reading by said read-out means.

Claim 12

A converter according to claim 1, further comprising means for biasing said control electrode region to allow carrier accumulation in response to the received light energy.

Claim 13

A converter according to claim 11, wherein said control electrode region is reverse biased relative to said first main electrode region during carrier accumulation.

Claim 14

A converter according to claim 1 further comprising a wafer surface and a thin insulating layer, wherein said control electrode region is disposed in a region of said wafer surface and has a potential controlled through said thin insulating layer.

Claim 15

A converter according to claim 1, wherein said output circuit further comprises an insulator disposed adjacent to said control electrode region and an electrode disposed adjacent to said insulator, wherein said control electrode region is coupled to the potential source independently from said second main electrode region.

Claim 16

A converter according to claim 1, further comprising a high resistance semiconductor region disposed between said control electrode region and said second main electrode region, wherein said first main electrode region comprises a semiconductor material of a first conductivity type at a first predetermined impurity concentration, and said second main electrode region comprises a semiconductor material of the first conductivity type at a second predetermined impurity concentration, the second predetermined impurity concentration being lower than the first predetermined impurity concentration, and wherein said control electrode region comprises semiconductor material of an opposite conductivity type of said first main electrode region.

Claim 17

A photoelectric converter for outputting an output representative of light energy received, said photoelectric converter comprising: transistor means comprising a control electrode region and first and second main electrode regions, said second main electrode region being connected to a voltage source and a junction being formed between said control electrode region and said first main electrode region, said control electrode region being for accumulating carriers in response to the light energy received; an output circuit for outputting the output signal connected to said first main electrode and producing the output signal; and extinguishing means for extinguishing the accumulated carriers during a refresh operation after said output circuit outputs the output signal, wherein during the refresh operation by said extinguishing means said control electrode is coupled to a potential source to forward bias the junction and wherein said control electrode is coupled independently from said second main electrode region during the refresh operation.

Claim 18

A photoelectric converter for outputting an output representative of light energy received, said photoelectric converter comprising: transistor means comprising a control electrode region and first and second main electrode regions, said second main electrode region being connected to a voltage source and a junction being formed between said control electrode region and said first main electrode region, said control electrode region being for accumulating carriers in response to the light energy received; an output circuit for outputting the output signal connected to said first main electrode and producing the output signal; and extinguishing means for extinguishing the accumulated carriers during a refresh operation after said output circuit outputs the output signal, wherein during the refresh operation by said extinguishing means said control electrode is coupled to a potential source to forward bias the junction and wherein said control electrode is coupled independently from said second main electrode region during the refresh operation.

Claim 19

A converter according to claim 16, wherein said extinguishing means comprises switching means for connecting said control electrode region to the potential source during the refresh operation.

Claim 20

A converter according to claim 16, further comprising capacitive means for coupling said control electrode region to the potential source.

Claim 21

A converter according to claim 18, wherein said capacitive means is disposed in series with said control electrode region, and said extinguishing means applies a pulsed voltage to said control electrode region through said capacitive means to forward bias the junction in the refresh operation.

Claim 22

A converter according to claim 16, wherein said extinguishing means connects said first main electrode region to a reference potential source during the refresh operation.

Claim 23

A converter according to claim 20, wherein said extinguishing means comprises switching means and control means for connecting said first main electrode region to the reference potential during the refresh operation.

Claim 24

A converter according to claim 21, wherein said second main electrode region is connected to a constant potential source which reverse biases the junction.

Claim 25

A converter according to claim 16, further comprising selective coupling means for selectively coupling said control electrode region to a reference potential prior to the refresh operation to cause the potential thereof to tend towards forward biasing relative to said first main electrode region.

Claim 26

A converter according to claim 23, wherein the selective coupling means comprises a transistor.

Claim 27

A converter according to claim 24, wherein said transistor comprises a first main electrode region coupled to said control electrode region of said transistor means, a second main electrode region disposed to receive a second reference potential, and a control region coupled to said second main electrode region of said transistor means.

Claim 28

A converter according to claim 16, further comprising limiting means for limiting said control electrode region from deviating from a forward bias potential with respect to said first main electrode region.

Claim 29

A converter according to claim 26, wherein said limiting means comprises a diode.

Claim 30

A converter according to claim 27, wherein said diode comprises a first electrode region coupled to said control electrode region, and a second electrode region disposed to receive a reference potential.

Claim 31

A converter according to claim 20 further comprising means for selectively coupling said reference potential source to said control electrode region prior to the refresh operation.

Claim 32

A converter according to claim 16, further comprising read-out means to read out the output signal.

Claim 33

A converter according to claim 30, wherein the output circuit comprises a capacitive element and wherein the output signal is output as a voltage across said capacitive element.

Claim 34

A converter according to claim 31, wherein the capacitance of said capacitive element is provided by stray capacitance of said output circuit.

Claim 35

A converter according to claim 31, further comprising an amplifying means and means for selectively coupling said capacitive element to said amplifying means.

Claim 36

A converter according to claim 33, wherein said amplifying means comprises a transistor selected from the group consisting of bipolar transistor, MOSFET and J-FET.

Claim 37

A converter according to claim 16, further comprising means for biasing said control electrode region for carrier accumulation responsive to the received light energy.

Claim 38

A converter according to claim 35, wherein said control electrode region is reverse biased relative to said first main electrode region during carrier accumulation.

Claim 39

A converter according to claim 35, wherein said control electrode region is in a floating state during carrier accumulation.

Claim 40

A converter according to claim 16, wherein the refresh operation occurs at a different time than the carrier accumulation.

Claim 41

A converter according to claim 16, wherein the output signal is outputted at a different time than the refresh operation.

Claim 42

A converter according to claim 16, wherein the output signal is outputted at a different time than the carrier accumulation.

Claim 43

A converter according to claim 16, wherein said transistor means comprises: a first semiconductor region comprising a first conductivity type having a first predetermined impurity concentration, said first semiconductor region being said second main electrode region; a second semiconductor region comprising the first conductivity type having a second predetermined impurity concentration, said second semiconductor region being said first main electrode region; and a third semiconductor region, said third semiconductor region being said control region.

Claim 44

A converter according to claim 41, wherein said third semiconductor region comprises a second conductivity type.

Claim 45

A converter according to claim 41, wherein the control region is a base region and said first main region is an emitter region.

Claim 46

A converter according to claim 41, further comprising an isolation region and a semiconductor substrate, wherein said transistor means is formed in said semiconductor substrate, and said isolation region surrounds and electrically isolates said transistor means.

Claim 47

A converter according to claim 41, further comprising a substrate of the first conductivity type.

Claim 48

A converter according to claim 45, further comprising a fourth semiconductor region having the first conductivity type, said fourth semiconductor region being buried in said substrate.

Claim 49

A converter according to claim 41, further comprising a fourth semiconductor region having the first conductivity type, said fourth semiconductor region being disposed laterally in said second main electrode region.

Claim 50

A converter according to claim 18, further comprising an insulative region and electrode, wherein the capacitive means comprises said control electrode region, said electrically insulative region being disposed contiguous to said control electrode region, and said electrode being connected to said insulative region.

Claim 51

A converter according to claim 41, further comprising a further region of the first conductivity type of a third predetermined impurity concentration, wherein said second main electrode region is partially surrounded by said further region, and the third predetermined impurity concentration is higher than the first predetermined impurity concentration of said higher main electrode region.

Claim 52

A converter according to claim 29, wherein said means for selectively coupling comprises an insulated-gate type transistor having a drain region, wherein said drain region is constituted by said first main electrode region.

Claim 53

A converter according to claim 41, further comprising a MOS transistor having a source region, wherein said source region is constituted by said control electrode region.

Claim 54

A converter according to claim 41, wherein said first main electrode region has a depth from 0.2 to 0.3 microns.

Claim 55

A converter according to claim 41, wherein said first main electrode region has an impurity concentration greater than 1×10 20 cm -3 .

Claim 56

A converter according to claim 41, wherein said first main electrode region has a distribution of impurity concentration decreasing from a side of an incident light surface toward a side opposite thereof.

Claim 57

A converter according to claim 41, wherein said control electrode region has a distribution of impurity concentration decreasing from a side of an incident light surface toward a side opposite thereof.

Claim 58

A photoelectric conversion array comprising a plurality of converters according to claim 16.

Claim 59

An array according to claim 56, wherein said transistors of said converters are arranged in rows and columns.

Claim 60

An array according to claim 56, wherein the extinguishing means of each of said converters extinguishes the accumulated carriers in all said transistors of said array at substantially the same time.

Claim 61

An array according to claim 57, wherein said extinguishing means of each of said converters extinguishes the accumulated carriers row by row.

Claim 62

An array according to claim 59, wherein each of said converters comprises a read-out means, and herein said extinguishing means of each of said converters extinguishes the accumulated carriers in one row, while simultaneously said read-out means outputs signals in an adjacent row.

Claim 63

An array according to claim 56, wherein said output circuits of each of said converters comprise a capacitive element, wherein the output signal is output as a voltage across said capacitive element, and wherein said capacitive elements of the output circuits are connected partially in common to provide a common capacitive load.

Claim 64

An array according to claim 57, wherein said output circuits of each of said converters each comprise a capacitive element, wherein the output signal is output as a voltage across said capacitive element, and wherein said capacitive elements of each column of transistors are connected partially in common and the resultant column groups are connected partially in c ommon capacitive load.

Claim 65

An array according to claim 56, wherein said output circuits of each of said converters each comprise a capacitive element, wherein the output signal is output as a voltage across said capacitance element, and wherein said transistors and said associated capacitive elements are arranged in groups, each of said groups comprising capacitive elements connected in common to provide a common capacitive load.

Claim 66

An array according to claim 63, further comprising shift registers associated with respective ones of said groups, each of said shift registers being operable to cause said transistors in the group to output the output signals in a preset order.

Claim 67

An array according to claim 61, wherein said output means are each connected to respective ones of said common loads.

Claim 68

An array according to claim 65, wherein said output means of each of said converters is a transistor selected from the group consisting of bipolar, MOS, FET and J-FET.

Claim 69

An array according to claim 56, wherein said array of transistors are provided on a common semiconductor substrate.

Claim 70

An array according to claim 67, wherein said first main electrode region of each of said converters in one row are electrically isolated from said first main electrode regions of each of said converters in an adjacent row.

Claim 71

A photoelectric conversion process comprising the steps of: (A) providing a photoelectric converter comprising: a transistor including a first semiconductor region having a first conductivity type, a first conductor, and an ohmic contact layer disposed between the first semiconductor region and the first conductor and comprising a semiconductor having the same conductivity type as and a higher impurity concentration than the first semiconductor region, a second semiconductor region disposed contiguous to the first semiconductor region having the same conductivity type as and a lower impurity concentration than the first semiconductor region, a third semiconductor region disposed contiguous to the second semiconductor region and having a different conductivity type from that of the second semiconductor region, an electrically insulating region disposed contiguous to the third semiconductor region, and a second conductor connected to the electrically insulating region, said third semiconductor region, said electrically insulating region and said second conductor in combination being arranged to constitute a capacitor; and a fourth semiconductor region disposed contiguous to the third semiconductor region and having a different conductivity type from that of the third semiconductor region, and a third conductor; (B) sequentially and cyclically conducting the following stages of operations; (a) Charge Storage Operation, setting the following initial conditions wherein: the first semiconductor region is held at a reverse polarity of voltage, the third semiconductors regions is biased to a reverse polarity of voltage, and the fourth semiconductor region is grounded or floated; and illuminating the photosensor element with incident light to store a charge corresponding to the incident light in the third semiconductor region, (b) Readout Operation, comprising holding the fourth semiconductor region in a floating state and forward biasing the third semiconductor region, independently of the first region, to output an electrical signal corresponding to the charge in the third semiconductor region; and (C) Refreshing Operation, comprising holding the first semiconductor region at a ground potential or a reverse polarity of voltage, holding the fourth semiconductor region at ground potential, and applying a forward polarity of voltage to the third semiconductor region to remove a charge remaining corresponding the photogenerated charge in the third semiconductor region.

Claim 72

A photoelectric conversion process comprising the steps of: (A) providing a photoelectric converter comprising: a transistor including a first semiconductor region having a first conductivity type, a first conductor, and an ohmic contact layer disposed between the first semiconductor region and the first conductor and comprising a semiconductor having the same conductivity type as and a higher impurity concentration than the first semiconductor region, a second semiconductor region disposed contiguous to the first semiconductor region having the same conductivity type as and a lower impurity concentration than the first semiconductor region, a third semiconductor region disposed contiguous to the second semiconductor region and having a different conductivity type from that of the second semiconductor region, an electrically insulating region disposed contiguous to the third semiconductor region, and a second conductor connected to the electrically insulating region, said third semiconductor region, said electrically insulating region and said second conductor in combination being arranged to constitute a capacitor; and a fourth semiconductor region disposed contiguous to the third semiconductor region and having a different conductivity type from that of the third semiconductor region, and a third conductor; (B) sequentially and cyclically conducting the following stages of operations; (a) Charge Storage Operation, setting the following initial conditions wherein: the first semiconductor region is held at a reverse polarity of voltage, the third semiconductors regions is biased to a reverse polarity of voltage, and the fourth semiconductor region is grounded or floated; and illuminating the photosensor element with incident light to store a charge corresponding to the incident light in the third semiconductor region, (b) Readout Operation, comprising holding the fourth semiconductor region in a floating state and forward biasing the third semiconductor region, independently of the first region, to output an electrical signal corresponding to the charge in the third semiconductor region; and (C) Refreshing Operation, comprising holding the first semiconductor region at a ground potential or a reverse polarity of voltage, holding the fourth semiconductor region at ground potential, and applying a forward polarity of voltage to the third semiconductor region to remove a charge remaining corresponding the photogenerated charge in the third semiconductor region.